A kind of transition metal chalcogenide thin layer material and its preparation method and application

Abstract

The invention discloses a transition metal chalcogenide thin-layer material and its preparation method and application. The preparation method comprises: uniformly laying a transition metal source between two substrates to prepare a sandwich structure; heat-treating the sandwich structure , the two substrates are fused together, and then the chalcogen source and the fused-bonded sandwich structure are subjected to a chemical vapor deposition reaction under the protection of a protective gas, in which the transition metal source is heated to dissolve and diffuse at the reaction temperature , and precipitate on the surface of the substrate, and react with the chalcogen source; wherein, the chalcogen source includes one or more of sulfur source, selenium source and tellurium source. Through the above method, the present invention combines the principle of "dissolution-precipitation" with the chemical vapor deposition reaction to prepare transition metal chalcogenide thin-layer materials. The manufacturing process is simple and easy, and the process is controllable. The thin-layer material of the group compound is uniformly distributed in the range of centimeters, has good shape, excellent optical and electrical properties, and has broad application prospects.

Description

technical field [0001] The invention relates to the technical field of preparation of two-dimensional semiconductor materials, in particular to a transition metal chalcogenide thin-layer material and its preparation method and application. Background technique [0002] The progress of modern information technology depends to a large extent on the development of integrated circuits based on semiconductor silicon. At present, due to the limitations of physical laws such as short channel effects and manufacturing costs, the mainstream complementary metal oxide semiconductor ( CMOS) technology is about to reach the 10nm technology node, and it is difficult to continue to improve, which also indicates that "Moore's Law" may face the end or delay. Therefore, exploring new semiconductor materials and developing transistor technology based on new principles to replace silicon-based CMOS technology is one of the mainstream research and development directions in the scientific and ind...

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Problems solved by technology

At present, the growth of transition metal chalcogenides (such as molybdenum disulfide) usually uses molybdenum trioxide and sulfur powder as the reaction source, and adopts the method of "substrate facing down" or "substrate facing up". The obtained samples are often poor in uniformity, with very thick samples in the middle region of the substrate, and discrete triangular thin-layer samples formed at the edges; such uneven distribution will seriously affect the application of transition metal chalcogenides in the electronics industry. application

[0005] The existing patent application CN108286042A discloses a method for preparing a molybdenum disulfide thin film with uniform layers, that is, a large-area single-layer molybdenum disulfide thin film is prepared on a silicon substrate by using potassium chloride-assisted chemical vapor deposition method. The amount of potassium to obtain single-layer molybdenum disulfide films of different sizes; the number of molybdenum disulfide layers grown by this method is uniform, but the distribution on the entire silicon substrate is difficult to achieve complete uniformity

The existing patent CN204779804U discloses a single sulfur source temperature control system to improve the growth uniformity of molybdenum disulfide. The raw material bottle used in this system is equipped with sulfur powder, and the heating tape is wound around the periphery of the material bottle. Argon is installed in the material bottle. Gas input tube and argon output tube, and the argon input tube and argon output tube are connected with the argon input tube of the tube furnace, and the sulfur source during the growth of the molybdenum disulfide film is realized by using the separate temperature control technology of the sulfur source. The precise control of temperature and vapor pressure avoids the premature sulfuration of molybdenum trioxide caused by the early evaporation of sulfur in the traditional chemical vapor deposition process, and improves the uniformity of the molybdenum disulfide film; but this method fails to improve the substrate, only Enables uniform sample preparation in a small area

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