A chalcogen compound wafer-assisted localized growth method for transition metal chalcogenides

Abstract

The invention relates to a method for assisting localized growth of transition metal chalcogenides on a chalcogenide compound wafer. The preparation method comprises the following steps: uniformly coating a prepared substrate with a layer of transition metal source and then buckling it on the chalcogenide On the compound wafer, the two construct a localized space and place it in a tube furnace. At high temperature, the chalcogen released from the chalcogen wafer reacts directly with the transition metal source on the substrate to obtain the corresponding transition metal compound on the substrate. Compared with the conventional CVD method, this method perfectly solves the problem of insufficient and uneven supply of precursor source diffusion during the growth process. With the characteristics of simple process, fast growth rate and strong universality, it can be used to prepare different kinds of transition metal chalcogenide (TMDC) materials, which provides a new idea for the preparation of two-dimensional materials.

Description

A chalcogenide wafer-assisted localized growth of transition metal chalcogenides Methods technical field The invention belongs to the technical field of two-dimensional material growth, especially relate to a kind of quick and easy preparation of transition metal sulfur method of family compounds. Background technique [0002] In recent years, with the rise of the graphene upsurge, two-dimensional materials have gradually attracted the attention of the majority of scientific researchers. In fact, In addition to the graphene we are now familiar with, two-dimensional materials have semiconducting properties of transition metal chalcogenides (TMDCs) and Hexagonal boron nitride (h‑BN) with insulator properties has also been extensively studied. Compared with graphene zero-bandgap material, TMDC is a Semiconductor 2D materials with band gap widths that vary with material thickness and therefore have unique electrical properties. Electron and optoelectronic properties,...

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Problems solved by technology

However, due to the limitation of the mass transfer of the precursor and the influence of the low sublimation point of the sulfur source in the CVD process, on the one hand, there are a large number of sulfur defect vacancies in the prepared TMDC sample, which seriously affects the quality of the sample; on the other hand, it is affected by the concentration gradient of the precursor. lead to inhomogeneity of the sample

Even in the process of preparing two-dimensional telluride materials, Te vapor will react with the silicon substrate to produce by-products, which is not conducive to the growth of samples.

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