Transition metal chalcogenide film and preparation method and application thereof

A technology of transition metal chalcogenides and transition metals, which is applied in the field of transition metal chalcogenide thin films and their preparation, which can solve the unpredictable application of elements with different properties, the inability to obtain large-size two-dimensional materials, and the inability to obtain two-dimensional nano-films, etc. problems, to achieve continuous and controllable growth, easy control, and excellent performance

Inactive Publication Date: 2019-05-31
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Pyon et al. (Pyon S, et al. Superconductivity Induced by Bond Breaking in the Triangular Lattice of IrTe 2 .J Phys SocJpn.2012,81(5).) By solid-state reaction method, the stoichiometric ratio of Ir and Te was mixed in an evacuated quartz ampoule, heated at 900°C for 24h, cooled to room temperature, ground and produced Granules, vacuum again at 900 ° C for 24 hours to produce polycrystalline IrTe 2 , the method cannot get IrTe 2 Two-dimensional nano film, and the preparation conditions are relatively high
CN 108423642A discloses a method for preparing two-dimensional nanosheets of small-sized transition metal chalcogenides, using transition metal chalcogenide bulk powder as raw material, using polymers as additives, and preparing different sizes, Two-dimensional nanosheets of transition metal chalcogenides with different compositions, but the transition metal chalcogenides need to be prepared in advance in this method, and the ball milling exfoliation method cannot obtain large-sized two-dimensional materials
CN 104894530A discloses a two-dimensional transition metal chalcogenide thin film and its preparation method, which uses chemical vapor deposition to prepare a continuous two-dimensional transition metal chalcogenide thin film on a boron nitride substrate, wherein the transition metal Chalcogenides are ZrS 2 , ZrSe 2 , HfS 2 or HfSe 2 In this method, only two elements of the zirconium group are used for the transition metal, and only sulfur and selenium are used for the chalcogen group, and other transition metals are not mentioned. It is not applicable to elements with large differences in properties. predict

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  • Transition metal chalcogenide film and preparation method and application thereof
  • Transition metal chalcogenide film and preparation method and application thereof
  • Transition metal chalcogenide film and preparation method and application thereof

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[0060] The preparation method comprises: separately heating a platinum group metal source and a chalcogen element source in a protective gas atmosphere to generate a chemical vapor deposition reaction, and grow a transition metal chalcogen compound thin film on a substrate.

[0061] In addition, in the embodiment of the present invention, a tubular heating furnace is used to carry out the chemical vapor deposition reaction, wherein the length of the quartz tube is 1.2 m, and the diameter is 1 inch. There are vacuum valves at both ends of the quartz tube, and the quartz tube is longer than that of the tubular heating furnace. The silicon chip used in the embodiment is a commercially available silicon chip, which is a high-phosphorus silicon chip produced by Hefei Kejing Technology Co., Ltd., its resistance value is 0.02~0.6Ω, and its size is 0.5mm×4 inches.

Embodiment 1

[0064] This embodiment provides a method for preparing a transition metal chalcogenide film, wherein the transition metal is iridium, and the chalcogen element is tellurium.

[0065] Its preparation method comprises the following steps:

[0066] (1) After oxidizing the surface of commercially purchased silicon wafers, cut them into small pieces, peel the boron nitride single crystal onto the cut silicon wafers by mechanical peeling method, and anneal at 500 ° C for 1 hour to obtain boron nitride substrates;

[0067] (2) 0.0209g iridium acetylacetonate, 5.0107g tellurium powder and 6 boron nitride substrates are placed in the quartz tube according to the flow direction of the gas, wherein the iridium acetylacetonate is placed in the quartz tube outside the heating furnace body, and used The heating sheet wraps this part of the quartz tube, the tellurium powder is placed in the quartz tube at a distance of 18cm from the center, and the base is placed in the middle of the quartz ...

Embodiment 2

[0072] This embodiment provides a method for preparing a transition metal chalcogenide film, wherein the transition metal is iridium, and the chalcogen element is tellurium.

[0073] Its preparation method comprises the following steps:

[0074] (1) After oxidizing the surface of commercially available silicon wafers, cut them into small pieces of 6×8mm, use the mechanical stripping method to peel boron nitride single crystals onto the cut silicon wafers, and anneal at 550°C for 0.8h to obtain nitrided silicon wafers. Boron substrate;

[0075] (2) 0.0185g iridium acetylacetonate, 2.2571g tellurium powder and 6 boron nitride substrates are placed in the quartz tube according to the flow direction of the gas, wherein iridium acetylacetonate is placed in the quartz tube outside the heating furnace body, and used The heating sheet wraps this part of the quartz tube, the tellurium powder is placed in the quartz tube at a distance of 17cm from the center, and the base is placed in ...

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Abstract

The invention provides a transition metal chalcogenide film and a preparation method and application thereof. Platinum group metal is adopted as the transition metal and comprises any one of ruthenium, rhodium, palladium, osmium and iridium or platinum, and chalcogen in a transition metal chalcogenide comprises any one of sulfur and selenium or tellurium. The method comprises the steps of separately heating a platinum group metal source and a chalcogen source in a protective gas atmosphere, carrying out a chemical vapor deposition reaction, and forming the transition metal chalcogenide film ona substrate. According to the method, a platinum group metal source is used as a raw material, a chemical vapor deposition method is adopted, continuous and controllable formation of the two-dimensional platinum group metal chalcogenide film in a large area is achieved, the surface of the obtained film material is flat, and the film material has excellent electrical and optical properties and hasa broad application prospect in the field of nano electronic devices.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional nanometer materials, and relates to a transition metal chalcogenide thin film, a preparation method and application thereof. Background technique [0002] In recent years, two-dimensional transition metal chalcogenides, as a new type of two-dimensional layered compounds, have a wide range of unique electrical, optical and mechanical properties due to their unique crystal structure and energy band structure. Attention, it is possible to develop new nanoelectronic devices and better meet the urgent needs of compactness and light weight. At the same time, two-dimensional phase-change materials provide more materials for basic research because of their various phase-change properties, and also provide more possibilities for future device applications, such as fast electronic oscillators and memory devices. [0003] Transition Metal Chalcogenides to IrTe 2 As an example, it has a graphene-lik...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G55/00C01B19/04B82Y40/00
Inventor 谢黎明赵朝阳王新胜周芮
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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