A kind of method for preparing black silicon material

A technology of black silicon and silicon film, which is applied in the field of black silicon material preparation, can solve problems such as affecting the doping content of black silicon, and achieve the effects of increasing the doping content, increasing the absorption rate and reducing volatilization

Inactive Publication Date: 2017-10-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of femtosecond laser etching, a large number of impurities absorb pulse energy and volatilize, which affects the doping content of black silicon.

Method used

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  • A kind of method for preparing black silicon material
  • A kind of method for preparing black silicon material
  • A kind of method for preparing black silicon material

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Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0025] like figure 1 Shown is a schematic flow chart of this embodiment.

[0026] Step 1: Obtain a clean silicon substrate.

[0027] N-type silicon chip doped with phosphorus is selected as the substrate material. Then use the RCA standard cleaning method to clean the silicon substrate to remove the surface oxide. Then put the cleaned silicon substrate into acetone for 10 minutes to sonicate to remove the residual organic matter on the surface. Finally, the silicon substrate was sonicated in deionized water for 5 minutes and dried under nitrogen atmosphere.

[0028] Step 2: Thermally evaporated selenium film

[0029] Put the silicon substrate cleaned in step 1 on the workbench of the vacuum evaporation device, and evacuate the vacuum of the vacuum chamber to 6×10 -4 Pa. Start the evaporation unit, and evaporate a layer of 100nm selenium film on the polished su...

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Abstract

The invention belongs to the field of black silicon material preparation, and in particular relates to a method for preparing a selenium-silicon composite film by means of thermal evaporation and magnetron sputtering, and using femtosecond laser etching to prepare black silicon. The invention uses a layer of silicon film sputtered on the selenium film as a protective layer in the existing process, which reduces the volatilization of chalcogen elements in the femtosecond etching process, increases the doping content, and can prevent the introduction of laser pulse irradiation. The impurity Se diffuses to the grain boundary, so as to maintain its doping concentration on the surface, so as to improve the absorption rate of black silicon. The absorption rate of the black silicon prepared by using the method is higher than 95% in the 400-1100nm wave band, and the absorption rate in the 1100-2200nm wave band is higher than 90%. Compared with the black silicon material prepared by thermally evaporating a layer of selenium film without covering the silicon protective layer, the absorption rate of the black silicon prepared by the method in the near-infrared band is significantly improved.

Description

technical field [0001] The invention belongs to the field of black silicon material preparation, and in particular relates to a method for preparing a selenium-silicon composite film by means of thermal evaporation and magnetron sputtering, and using femtosecond laser etching to prepare black silicon. Background technique [0002] Crystalline silicon is rich in resources and has the advantages of easy acquisition, easy purification, high temperature resistance, and easy doping. It plays an important role in the semiconductor industry and has a wide range of applications in the fields of detectors, sensors, and solar cell preparation. However, the inherent defects of crystalline silicon limit its application in optoelectronic devices. Crystalline silicon is an indirect bandgap material with a forbidden band width of 1.124eV at room temperature and a cut-off wavelength of crystalline silicon absorption of 1100nm. When the incident light wavelength is greater than 1100nm, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/18H01L31/0288
CPCH01L31/02363H01L31/0288H01L31/1804Y02P70/50
Inventor 吴志明唐菲杜玲艳李睿胡征李世彬李伟吴雪飞姬春晖
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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