Palladium-coated copper bonding wire and method for manufacturing same
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A manufacturing method and a bonding wire technology, which are applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of being cheaper than gold and improving characteristics, and achieve the effect of maintaining bonding reliability and excellent bonding reliability
Pending Publication Date: 2021-07-23
TANAKA DENSHI KOGYO KK
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[0006] Palladium-coated copper wires have the problem of oxidation of copper itself and the lack of air balloons, and the problem of improved characteristics that are easily damaged by coating, but because it is cheaper than gold, it is widely used in personal computers and peripheral equipment, Consumer equipment, such as communication equipment, is rapidly spreading as it is used under relatively mild conditions
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[0120] Next, examples will be described. The present invention is not limited to the following examples. Examples 1-19 and Examples 32-34 are examples, and Examples 20-31 are comparative examples.
example 1～18
[0122] Copper (Cu) with a purity of 99.99% by mass or more was used as a core material, which was continuously cast, rolled while performing pre-heat treatment, and then drawn once to obtain a copper wire rod (0.5 mm in diameter).
[0123] The palladium coating layer was formed as follows. Add additives containing sulfur, selenium, and tellurium to a commercially available palladium plating bath, and control the plating bath so that the concentration relative to the entire lead (total of copper, palladium, and chalcogen elements) becomes the concentration described in the table below. Concentrations of sulfur, selenium, and tellurium in the plating baths were prepared respectively. In the state where the copper wire is immersed in the plating bath, the current density of the copper wire is 0.75A / dm 2 Passing an electric current creates a palladium coating containing sulfur, selenium or tellurium. In the case of forming a palladium coating containing two or more of sulfur, se...
example 33～35
[0148] Next, the characteristics of the palladium-covered copper bonding wire having the gold layer on the palladium layer were confirmed. In the manufacturing process of the palladium-coated copper bonding wires of Examples 1, 4, and 7, after covering palladium, further using a commercially available gold plating bath to perform gold plating, the same operation as Examples 1, 4, and 7 was performed to produce The palladium of the gold layer covers the copper bonding wire (Examples 33-35). In addition, the concentration of each element in Table 3 was calculated without including the gold concentration of the gold layer in the whole lead.
[0149] Die wear tests were performed on these palladium-coated copper bonding wires having a gold layer and the palladium-coated copper bonding wires of Examples 1, 4, and 7 without a gold layer, and the results are shown in the column of "die wear" in Table 3. middle. For the die wear test, the lead wire of each sample was continuously dr...
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Abstract
The present invention provides a palladium-coated copper bonding wire which does not undergo the formation of shrinkage cavities during a first bonding procedure, has high bonding reliability, and can keep the excellent bonding reliability thereof for a long period of time even in high-temperature / high-humidity environments. A palladium-coated copper bonding wire, in which the concentration of palladium is 1.0-4.0% by mass inclusive, the total concentration of sulfur-group elements is 50 ppm by mass or less, and the concentration of sulfur is 5-12 ppm by mass inclusive or the concentration of selenium is 5-20 ppm by mass inclusive or the concentration of tellurium is 15-50 ppm by mass inclusive all relative to the total amount of copper, palladium and sulfur-group elements, and a palladium-rich region having an average palladium concentration of 6.5-30.0 at.% relative to the total amount of copper and palladium exists in a region lying between the surface of a tip part of a free air ball formed at a tip of the wire to the depth of 5.0-100.0 nm inclusive from the surface of the tip part.
Description
technical field [0001] The present invention relates to a palladium-covered copper bonding wire suitable for ball bonding of electrodes of semiconductor elements and external electrodes, and a method for manufacturing the same. Background technique [0002] In general, electrodes of a semiconductor element and external electrodes on a circuit wiring board for a semiconductor are connected by wire bonding. In this wire bonding, an electrode of a semiconductor element is bonded to one end of a bonding wire by a method called ball bonding (first bonding), and the other end of the bonding wire is bonded to an external electrode by a method called wedge bonding. is engaged (secondary engagement). In ball bonding, a molten ball is formed at the tip of the bonding wire, and the bonding wire is connected to, for example, the surface of an aluminum electrode on a semiconductor element through the molten ball. [0003] In the formation of molten balls, first, the tip of the bonding ...
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