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31results about How to "High preparation temperature" patented technology

Manufacturing method of flexible display device and flexible display device manufactured by adopting same

InactiveCN104576970AImprove film densityReduce pinholes and grain boundariesSolid-state devicesSemiconductor/solid-state device manufacturingPolymer substrateEngineering
The invention provides a manufacturing method of a flexible display device. In the manufacturing method, a water and oxygen barrier layer is directly arranged on a flexible polymer substrate, and then arranged on an organic light-emitting diode in a bonding manner, so that the film-forming compactness of the inorganic barrier layer can be improved, and accordingly the water vapor and oxygen permeation preventing capability of the water and oxygen barrier layer is improved, degradation and deterioration of various materials in the organic light-emitting diode are prevented and the service life of the flexible display device is prolonged; the manufacturing process of the organic light-emitting diode and the manufacturing process of the water and oxygen barrier layer are not required to be sequentially carried out, the water and oxygen barrier layers on a first flexible polymer substrate and a second flexible polymer substrate can be manufactured synchronously or manufactured on the same flexible polymer substrate, and a cutting process is performed as required, so that a production process can be simplified and purposes of improving the production efficiency and reducing the cost are achieved. The invention further provides the flexible display device manufactured by the manufacturing method. The flexible display device is relatively long in service life.
Owner:KUNSHAN NEW FLAT PANEL DISPLAY TECH CENT +1

Method for preparing compound diamond-like carbon coating by using medium-frequency magnetic-control glow discharge method

The invention relates to a method for preparing a nano compound diamond-like carbon coating, which is realized in a way that: glow discharge is produced by using a medium-frequency magnetic-control sputtering target; argon and excessive hydrocarbon gases are introduced, so that the metal on the target surface reacts with the hydrocarbon gases to produce metallic carbides; when the argon ions bombard the target surface, the target surface sputters the metallic carbides; strong plasma produced by the glow discharge of the target surface ionize the hydrocarbon gases, so that the hydrocarbon gases produce highly-ionized carbon ions; and the carbides sputtered from the target surface and the highly-ionized carbon ions produced from the hydrocarbon gases form a high-hardness carbide-doped nano compound diamond-like carbon coating on a workpiece surface. The coating prepared by the invention has the characteristics of high hardness, strong adhesive force, high growth speed, high production efficiency, low depositing temperature, low production cost, simple equipment structure and the like; and diamond-like carbon coatings with different thicknesses can be prepared on hard alloy, high-speed steel and various other workpieces.
Owner:WUHAN UNIV

High efficiency silicon-based heterojunction double-sided battery and its preparation method

The invention discloses a high efficiency silicon-based heterojunction double-sided battery and its preparation method. The high efficiency silicon-based heterojunction double-sided battery comprises an N type silicon chip. On the front side of the N type silicon chip, a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a P type doped amorphous silicon layer, a transparent conductive film layer and a metal gate wire electrode are arranged in succession. The electron band gap of the second intrinsic amorphous silicon layer is greater than that of the first intrinsic amorphous silicon layer. On the back side of the N type silicon chip, a third intrinsic amorphous silicon layer, an N type doped amorphous silicon layer, a transparent conductive film layer and a metal gate wire electrode are arranged in succession. According to the invention, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are prepared in different chambers respectively, and the preparation temperature of the first intrinsic amorphous silicon layer is lower than that of the second intrinsic amorphous silicon layer so that the second intrinsic amorphous silicon layer has a relatively wider electron band gap which corresponds to the band gap of a crystalline silicon and therefore, can be used as a barrier layer to block the diffusion of electrons into the emitter using the difference in band width; therefore, the combination of electrons with empty cavities can be reduced, improving the electrical performance of the battery.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD

Graphitized carbon-based adsorption material as well as preparation method and application thereof

The invention discloses a graphitized carbon-based adsorption material and a preparation method thereof. The preparation method comprises the following steps: placing phenolic resin under the protection of inert gas, continuously heating to 1200-1600 DEG C at a certain rate, continuously heating at constant temperature, carrying out high-temperature anaerobic carbonization, cooling to room temperature, crushing, and sieving to obtain a black granular product. The method adopts the thermoplastic phenol-formaldehyde resin as the unique raw material, does not need any additive, is lower in preparation temperature, avoids the defects of high preparation temperature, serious energy consumption, high metal content and the like in the traditional method, is simple in preparation process, and is suitable for industrial large-scale preparation; the prepared graphitized carbon-based adsorption material can replace a commercially available graphitized carbon black material recommended in the determination isotope dilution high-resolution gas chromatography-high-resolution mass spectrometry (HJ 77.2-2008) of ambient air and waste gas-dioxins, the recovery rate range of PCDD/Fs extraction internal standard is 80%-107%, and the requirements are met.
Owner:光大理工环境技术研究院(青岛)有限公司

Method for preparing compound diamond-like carbon coating by using medium-frequency magnetic-control glow discharge method

The invention relates to a method for preparing a nano compound diamond-like carbon coating, which is realized in a way that: glow discharge is produced by using a medium-frequency magnetic-control sputtering target; argon and excessive hydrocarbon gases are introduced, so that the metal on the target surface reacts with the hydrocarbon gases to produce metallic carbides; when the argon ions bombard the target surface, the target surface sputters the metallic carbides; strong plasma produced by the glow discharge of the target surface ionize the hydrocarbon gases, so that the hydrocarbon gases produce highly-ionized carbon ions; and the carbides sputtered from the target surface and the highly-ionized carbon ions produced from the hydrocarbon gases form a high-hardness carbide-doped nano compound diamond-like carbon coating on a workpiece surface. The coating prepared by the invention has the characteristics of high hardness, strong adhesive force, high growth speed, high production efficiency, low depositing temperature, low production cost, simple equipment structure and the like; and diamond-like carbon coatings with different thicknesses can be prepared on hard alloy, high-speed steel and various other workpieces.
Owner:WUHAN UNIV

A kind of high-efficiency silicon-based heterojunction double-sided battery and preparation method thereof

The invention discloses a high efficiency silicon-based heterojunction double-sided battery and its preparation method. The high efficiency silicon-based heterojunction double-sided battery comprises an N type silicon chip. On the front side of the N type silicon chip, a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a P type doped amorphous silicon layer, a transparent conductive film layer and a metal gate wire electrode are arranged in succession. The electron band gap of the second intrinsic amorphous silicon layer is greater than that of the first intrinsic amorphous silicon layer. On the back side of the N type silicon chip, a third intrinsic amorphous silicon layer, an N type doped amorphous silicon layer, a transparent conductive film layer and a metal gate wire electrode are arranged in succession. According to the invention, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are prepared in different chambers respectively, and the preparation temperature of the first intrinsic amorphous silicon layer is lower than that of the second intrinsic amorphous silicon layer so that the second intrinsic amorphous silicon layer has a relatively wider electron band gap which corresponds to the band gap of a crystalline silicon and therefore, can be used as a barrier layer to block the diffusion of electrons into the emitter using the difference in band width; therefore, the combination of electrons with empty cavities can be reduced, improving the electrical performance of the battery.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD
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