Silicon nitride fiber reinforced silicon dioxide ceramic based composite and preparation method and application thereof
A silicon nitride fiber, silicon dioxide technology, applied in the direction of radiation unit cover and other directions, can solve the problems of poisoning, high price of precursor polyborazane, complicated preparation process, etc., achieve good anti-oxidation performance, shorten preparation cycle, Prepare simple effects
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] A kind of Si of the present invention 3 N 4f / SiO 2 Composite materials, including Si 3 N 4 Unidirectional Si obtained by unidirectional laying of fiber bundles 3 N 4 fiber preforms, and uniformly filled in the unidirectional Si 3 N 4 SiO in the pores of fiber preforms 2 Ceramic substrate. Among them, SiO 2 Ceramic substrate in Si 3 N 4f / SiO 2 The volume fraction in the composite is 36.9%.
[0030] A kind of Si of above-mentioned present embodiment 3 N 4f / SiO 2 The preparation method of composite material, comprises the following steps:
[0031] (1) Preparation of fiber preforms: Si 3 N 4 The fiber bundles were arranged in one direction and fixed by a mold to prepare a unidirectional silicon nitride fiber preform with a fiber volume fraction of 39.6%.
[0032] (2) Debinding treatment: place the unidirectional silicon nitride fiber preform obtained in step (1) in a vacuum furnace, and vacuumize to 10 -2 MPa, heated to 500°C at a heating rate of 10°C...
Embodiment 2
[0037] A kind of Si of the present invention 3 N 4f / SiO 2 composite materials, including the use of Si 3 N 4 Two-dimensional semi-Si prepared by weaving and piercing fiber bundles 3 N 4 Fiber preforms, and uniformly filled in the two-dimensional semi-Si 3 N 4 SiO in the pores of fiber preforms 2 Ceramic substrate. Among them, SiO 2 Ceramic substrate in Si 3 N 4f / SiO 2 The volume fraction in the composite is 37.4%.
[0038] A kind of Si of above-mentioned present embodiment 3 N 4f / SiO 2 The preparation method of composite material, comprises the following steps:
[0039] (1) Preparation of fiber preforms: Si 3 N 4 A two-dimensional silicon semi-nitride fiber preform with a fiber volume fraction of 28.4% was prepared by weaving and puncturing the fiber bundles.
[0040] (2) Debinding treatment: put the two-dimensional silicon semi-nitride fiber preform obtained in step (1) in a vacuum furnace, and evacuate to 10 -2 After MPa, the organic glue (Si 3 N 4 T...
Embodiment 3
[0048] A kind of Si of the present invention 3 N 4f / SiO 2 composite materials, including the use of Si 3 N 4 Three-dimensional Si with a volume fraction of 32% prepared by weaving fiber bundles 3 N 4 Fiber preforms, and uniformly filled in the three-dimensional Si 3 N 4 SiO in the pores of fiber preforms 2 Ceramic substrate. Among them, SiO 2 Ceramic substrate in Si 3 N 4f / SiO 2 The volume fraction in the composite is 38.2%.
[0049] A kind of Si of above-mentioned present embodiment 3 N 4f / SiO 2 The preparation method of composite material, comprises the following steps:
[0050] (1) Preparation of fiber preforms: Si 3 N 4 The fiber bundles were braided to prepare a three-dimensional silicon nitride fiber preform with a fiber volume fraction of 32.0%.
[0051] (2) Debinding treatment: Place the three-dimensional silicon nitride fiber preform obtained in step (1) in a vacuum furnace and vacuumize to 10 -2 MPa, heated to 600°C at a heating rate of 5°C / min...
PUM
Property | Measurement | Unit |
---|---|---|
density | aaaaa | aaaaa |
bending strength | aaaaa | aaaaa |
density | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com