Method of preparing transition metal dichalcogenide (TMD)

A technology of transition metals and chalcogenides, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that the number of film layers is difficult to control, and it is difficult to apply to large-scale production

Active Publication Date: 2017-04-05
阙郁伦
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  • Abstract
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Problems solved by technology

Although the exfoliation method is simple to prepare and can provide high-quality two-dimensional materials, it is difficult to control the number of film layers after exfoliation, and it is difficult to apply to large-scale production
The disadvantage of the existing chemical vapor deposition method is that two-dimensional materials must be prepared in an environment with a high temperature of more than 500 degrees and a medium vacuum degree higher than 25 Torr (torr), and the most criticized is the chalcogenide. The source is highly toxic hydrogen sulfide gas (H 2 S)

Method used

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  • Method of preparing transition metal dichalcogenide (TMD)
  • Method of preparing transition metal dichalcogenide (TMD)
  • Method of preparing transition metal dichalcogenide (TMD)

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Embodiment Construction

[0049] Please refer to figure 1 and figure 2 ,in figure 1 is a flowchart illustrating a method for preparing transition metal chalcogenides. figure 2 is to draw figure 1 Schematic diagram of the preparation of transition metal chalcogenides. In this embodiment, a plasma-assisted processing system 100 is used to prepare transition metal chalcogenides, so the figure 2 The structure of the plasma-assisted processing system 100 shown in , which includes a reaction chamber 110 , a radio frequency generator 120 , an electrode 130 , a heater 140 and a vacuum pump 150 . The reaction chamber 110 has a first gas inlet 111 and a second gas inlet 112. The first gas inlet 111 is used to deliver the gas and nitrogen generated by heating the chalcogen solid source, and the second gas inlet 112 is used to deliver hydrogen. , as a source of auxiliary plasma generation.

[0050] The method for preparing transition metal chalcogenides, the steps include the following steps:

[0051] St...

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Abstract

The invention provides a method of preparing transition metal dichalcogenides (TMDs). The TMDs is produced in such a process environment that substrate temperature is 150-500 DEG C and pressure is 25-760 torr. In the method, the chalcogens are obtained in a manner of heating a solid chalcogen source and ionizing the solid chalcogen source to form chalcogen plasma, so that the method is free of using hydrogen sulfide gas, which is extremely poisonous, for producing the TMDs in the prior art.

Description

technical field [0001] The present invention relates to a method for preparing transition metal chalcogenides, and in particular to a method for preparing transition metal chalcogenides at low temperature and normal pressure. Background technique [0002] In recent years, due to its excellent electrical, optical and physical properties, the two-dimensional material Graphene has become one of the most popular research topics for scientists. Not only that, in terms of practical industrial applications, new energy batteries such as lithium-ion batteries and solar cells, as well as various electronic components such as bendable displays, capacitors and sensors, have produced impressive high performance. [0003] However, graphene does not have a direct energy gap and is difficult to be compatible with the current silicon manufacturing process, making transition metal dichalcogenide (TMD) with a two-dimensional structure similar to graphene a new wave of research direction. [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30
Inventor 阙郁伦麦迪纳陈雨泽
Owner 阙郁伦
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