A bismuth-based topological insulator material and preparation method thereof

A topological insulator, bismuth-based technology, applied in the field of bismuth-based topological insulator materials and its preparation, can solve the problems of expensive equipment, harsh process, complicated operation, etc., and achieve good topological insulation characteristics, strong industrial operation, and simple process conditions.

Active Publication Date: 2020-07-28
XI AN JIAOTONG UNIV
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  • Description
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  • Application Information

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Problems solved by technology

[0005] These preparation methods are expensive in equipment, expensive in raw material cost, harsh in process, and complicated in operation; and they have low yield, poor quality, and low crystallinity; and at the same time, impurities will inevitably be introduced to cover up the low-dimensional Bi 2 Se 3 / Bi 2 Te 3 The topological insulation properties of

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  • A bismuth-based topological insulator material and preparation method thereof
  • A bismuth-based topological insulator material and preparation method thereof
  • A bismuth-based topological insulator material and preparation method thereof

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preparation example Construction

[0035] The preparation method of bismuth-based topological insulator material of the present invention comprises the following steps:

[0036] Step 1: Take raw materials: silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth trioxide powder and selenium powder or tellurium powder; among them, silicon dioxide powder, sodium hydroxide powder, boron oxide powder, trioxide The molar ratio of bismuth powder and selenium powder is 4:4:1:(0.05-0.5):(0.05-0.5); or silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth trioxide powder and tellurium The molar ratio of the powder is 4:4:1:(0.05-0.5):(0.05-0.5).

[0037]Step 2: Grind the obtained silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth trioxide powder and selenium powder or tellurium powder in a mortar to mix the mixture evenly, and then add the evenly mixed mixture to the corundum Put the corundum crucible in a high-temperature electric furnace to melt the...

Embodiment 1

[0040] This example prepares Bi2Se 3 Topological insulator material, Bi2Se 3 The raw material components and dosage of the topological insulator material are as follows: the molar ratio of silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth trioxide powder and selenium powder is 4:4:1:0.1:0.1.

Embodiment B

[0041] In this embodiment Bi 2 Se 3 The preparation process of the topological insulator two-dimensional material is as follows:

[0042] Grind all the above raw materials for 10 minutes and mix them evenly, then add the mixture into a 100mL corundum crucible, then heat the corundum crucible to 900°C in a high-temperature electric furnace at 10°C / min, keep it warm for 10min, take out the corundum crucible and cool it to room temperature to obtain Bi 2 Se 3 volume. Bi in the cooled corundum crucible 2 Se 3 The block was separated from the corundum crucible, and ground for 30 minutes under the dispersion of an appropriate amount of isopropanol to form a powder, and then the ground powder was dispersed in 10 mL of isopropanol for 600 minutes under the ultrasonic dispersion instrument to obtain Bi 2 Se 3 Two-dimensional topological insulator materials.

[0043] Such as figure 1 As shown, it can be clearly seen from the figure that Bi 2 Se 3 It is layered and is composed ...

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Abstract

The invention belongs to the technical field of insulator materials, and specifically relates to a bismuth-based topological insulator material and a preparation method thereof. The preparation methodcomprises the following steps: S1, uniformly mixing silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth-source compound powder and chalcogen element powder according to a molar ratio is 4: 4: 1: (0.05-0.5): (0.05-0.5) so as to obtain a mixture A; S2, melting the mixture A at a high temperature of 900 to 1100 DEG C, and carrying out cooling to a room temperature so as to obtain the bismuth-based topological insulator material; and S3, mixing the bismuth-based topological insulator material obtained in the step S2 with isopropyl alcohol, carrying out grinding so as to obtain bismuth-based topological insulator material powder, then dispersing the bismuth-based topological insulator material powder into isopropyl alcohol, and carrying out ultrasonic dispersion so asto obtain a bismuth-based topological insulator two-dimensional material. The method provided by the invention realizes natural growth of a crystal in a glass melt through a high-temperature glass melting method and utilization of low-cost raw materials, and realizes preparation of high-quality layered bismuth-based topological insulator binary and multiple system materials.

Description

technical field [0001] The invention belongs to the technical field of insulator materials, and in particular relates to a bismuth-based topological insulator material and a preparation method thereof. Background technique [0002] Bi 2 Te 3 and Bi 2 Se 3 It is a very powerful material system. As early as the 1950s, researchers discovered that Bi 2 Te 3 The system alloy compound has high electrical conductivity and low thermal conductivity, and has always been a research hotspot in the field of thermoelectricity; in the 1960s, it was reported that this system can be used for phase change memory to read and write data. Based on the application of these two aspects, for Bi 2 Te 3 and Bi 2 Se 3 The research on the preparation of has been carried out for decades, including solid melting, magnetron sputtering, solvothermal and other methods. But it is worth noting that in previous applications, especially as thermoelectric materials, the performance of the material doe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B9/08
Inventor 许章炼王盛李帅鹏苏钲雄王洁
Owner XI AN JIAOTONG UNIV
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