Magnetic topological insulator heterojunction single-crystal material and synthesis method thereof

A technology for topological insulators and single crystal materials, applied in the growth of polycrystalline materials, single crystal growth, single crystal growth, etc., can solve the problems of long production cycle, high production cost, low production efficiency, etc., to achieve simple operation and reduce production. Cost, good stability effect

Inactive Publication Date: 2020-01-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are cumbersome to operate, require expensive special production equ

Method used

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  • Magnetic topological insulator heterojunction single-crystal material and synthesis method thereof
  • Magnetic topological insulator heterojunction single-crystal material and synthesis method thereof
  • Magnetic topological insulator heterojunction single-crystal material and synthesis method thereof

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Embodiment 1

[0025] A synthetic method of a magnetic topological insulator heterojunction single crystal material, comprising the following steps:

[0026] (1) After grinding manganese, bismuth and tellurium, put them into a quartz tube for vacuum sealing; wherein the molar ratio of manganese, bismuth and tellurium is 1:2:4;

[0027] (2) Heat the quartz tube sealed in step (1) to 900°C, keep it warm for 2h, then cool down at a cooling rate of 30°C / h for 10h, and drop the temperature to 600°C;

[0028] (3) The quartz tube after cooling in step (2) is dropped to 584 DEG C through 8 days at a cooling rate of 2 DEG C / d;

[0029] (4) Quenching the quartz tube after cooling down again in step (3) in an ice bath to obtain MBT, a heterojunction single crystal material of a magnetic topological insulator.

Embodiment 2

[0031] A synthetic method of a magnetic topological insulator heterojunction single crystal material, comprising the following steps:

[0032] (1) After grinding manganese, bismuth and tellurium, put them into a quartz tube for vacuum sealing; wherein the molar ratio of manganese, bismuth and tellurium is 1:4:7;

[0033] (2) Heat the quartz tube sealed in step (1) to 1000°C, keep it warm for 3h, then cool down at a cooling rate of 40°C / h for 10h, and drop the temperature to 600°C;

[0034] (3) The quartz tube after cooling in step (2) is dropped to 586° C. through 7 days at a cooling rate of 2° C. / d;

[0035] (4) Quenching the quartz tube after cooling down again in step (3) in an ice bath to obtain MBT, a heterojunction single crystal material of a magnetic topological insulator.

Embodiment 3

[0037] A synthetic method of a magnetic topological insulator heterojunction single crystal material, comprising the following steps:

[0038] (1) After manganese, antimony and selenium are ground, put into a quartz tube and carry out vacuum sealing; wherein, the molar ratio of manganese, antimony and selenium is 1:5:9;

[0039] (2) Heat the quartz tube sealed in step (1) to 1100°C, keep it warm for 4h, then cool down at a cooling rate of 50°C / h for 10h, and drop the temperature to 600°C;

[0040] (3) The quartz tube after cooling in step (2) is dropped to 576° C. through 8 days at a cooling rate of 3° C. / d;

[0041] (4) Quenching the quartz tube after cooling down again in step (3) in an ice bath to obtain MBT, a heterojunction single crystal material of a magnetic topological insulator.

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Abstract

The invention provides a magnetic topological insulator heterojunction single-crystal material and a synthesis method thereof. The synthesis method comprises the following steps: grinding metal and chalcogen, then charging a quartz tube with the ground metal and chalcogen, and carrying vacuum tube sealing; heating the sealed quartz tube, maintain the sealed quartz tube at a certain temperature, and carrying out cooling treatment; subjecting the cooled quartz tube to cooling treatment again; and carrying out ice-bath quenching on the quartz tube which is cooled again so as to obtain the magnetic topological insulator heterojunction single-crystal material. The preparation method is simple to operate, does not involve any transfer method, uses no expensive special production equipment, has high production efficiency, and can be used for quickly preparing the single-crystal material with a natural magnetic topological insulator heterojunction.

Description

technical field [0001] The invention belongs to the technical field of topological insulator heterojunction materials, and in particular relates to a magnetic topological insulator heterojunction single crystal material and a synthesis method thereof. Background technique [0002] The importance of the anomalous quantum Hall effect is that without any external magnetic field, it is possible for humans to use its non-dissipative edge states to develop a new generation of low-energy transistors and electronic devices to solve the bottleneck of computer heating and Moore's Law problem, so this research result will promote the development of a new generation of low-power transistors and electronic devices. However, the anomalous quantum Hall effect is extremely demanding on materials. [0003] Introducing ferromagnetism into its topological insulator, breaking its time symmetry may realize the anomalous quantum Hall effect. Currently, two methods are commonly used to introduce...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B1/10
CPCC30B1/10C30B29/46
Inventor 刘富才卞仁吉蒙鹏曹桂铭洪配龙
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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