Method for direct patterned growth of atomic layer transition metal dichalcogenides

Abstract

A method of direct growth of a patterned transition metal dichalcogenide monolayer, the method comprising the steps of: providing a substrate covered by a mask having a pattern defined by one or more shaped holes; or a plurality of shaped holes thermally depositing the salt on the substrate so that the deposition salt is arranged on the substrate in a mask pattern; and thermally co-depositing the transition metal oxide and the chalcogen element onto the deposition salt to form Graphical patterning of transition metal dichalcogenide monolayers. Also provided are patterned transition metal dichalcogenide monolayers prepared according to the method.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Application No. 62 / 678802, filed May 31, 2018. The disclosure of this priority application is incorporated herein by reference in its entirety. Background technique [0003] Atomic layer transition metal dichalcogenides (TMDs) have been the subject of intensive research due to their promising optoelectronic and catalytic properties as well as next-generation circuits. Using TMDs in circuits not only needs to maintain low contact resistance with single-layer materials, but also needs to be compatible with very fine photolithographic processes with the necessary patterning. However, utilizing photolithographic processes is complicated by not only mask resolution issues but also the required reactive ion etching that may inadvertently alter the intrinsic properties of TMD monolayers. Thus, a continuing challenge for these materials lies not only in the synthesis of lar...

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Problems solved by technology

However, utilizing photolithographic processes is complicated because not only mask resolution issues but also the required reactive ion etching can inadvertently alter the intrinsic properties of TMD monolayers.

Therefore, a continuing challenge for these materials lies not only in the synthesis of large monolayer domains but also in controlling their growth patterns according to circuit design.

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