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Method for growing large-area single-layer or multi-layer molybdenum ditelluride structure through secondary reaction

A molybdenum ditelluride, secondary reaction technology, applied in coating, gaseous chemical plating, metal material coating technology and other directions, to achieve the effects of good controllability, simple operation and wide application prospects

Inactive Publication Date: 2020-03-27
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

The biggest problem currently limiting the practical application of ultrathin 2D layered materials is the acquisition of high-quality wafer-scale materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0009] First deposit a molybdenum telluride nano-film on a silicon substrate with a size of 100 square centimeters by atomic layer deposition, the deposition temperature is 500°C, and the deposition time is 10 minutes; High-temperature secondary reaction with elemental tellurium under high temperature, the reaction temperature is 1000°C, the reaction pressure is 80 Torr, and the reaction time is 1 minute, and a large-area single-layer molybdenum ditelluride structure is obtained.

Embodiment 2

[0011] First deposit a molybdenum telluride nano-film on a sapphire wafer substrate with a size of 66 square centimeters by atomic layer deposition, the deposition temperature is 380°C, and the deposition time is 5 hours; High-temperature secondary reaction with elemental tellurium is carried out under the atmosphere, the reaction temperature is 710°C, the reaction pressure is 170 Torr, and the reaction time is 3 minutes, and a large-area multilayer molybdenum ditelluride structure is obtained.

Embodiment 3

[0013] First deposit a molybdenum telluride nano-film on an aluminum oxide substrate with a size of 4 square centimeters by atomic layer deposition, the deposition temperature is 100°C, and the deposition time is 150 minutes; A high-temperature secondary reaction with simple tellurium was carried out under an argon atmosphere. The reaction temperature was 600° C., the reaction pressure was 230 Torr, and the reaction time was 7 minutes to obtain a large-area multilayer molybdenum ditelluride structure.

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Abstract

The invention discloses a method for growing a large-area single-layer or multi-layer molybdenum ditelluride structure through a secondary reaction. The method comprises the steps: a molybdenum telluride nano-film is deposited on a substrate in an atomic layer depositing mode firstly, then the substrate with the deposited molybdenum telluride nano-film is subjected to the high-temperature secondary reaction with elementary substance tellurium by taking inert gas or hydrogen as a carrier, and the large-area single-layer or multi-layer molybdenum ditelluride structure is obtained on the substrate. The method has the advantages that controllability is good, operation is easy, and large-area preparation of the single-layer or multi-layer molybdenum ditelluride can be achieved; and the preparedmolybdenum ditelluride has wide application prospects in the aspects of optical materials, storage materials, catalytic materials, semiconductor optoelectronic materials and the like.

Description

technical field [0001] The invention belongs to the field of material preparation, relates to vapor deposition technology, and specifically refers to a method for secondary reaction growth of a large-area single-layer or multi-layer molybdenum ditelluride structure. Background technique [0002] Since Novoselov and Geim and their collaborators successfully stripped graphene from graphite using adhesive tape in 2004, the research on two-dimensional materials has entered a period of rapid development. At the same time, graphene and graphene-like materials have further enriched The family of two-dimensional materials, such as two-dimensional transition metal chalcogenides, especially molybdenum ditelluride, has a wide range of applications in optical materials, storage materials, catalytic materials, and semiconductor optoelectronic materials due to its superior electrical, optical, and mechanical properties. Application prospect. [0003] Although two-dimensional nanomaterial...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/455
CPCC23C16/305C23C16/45525
Inventor 袁梦辉陈鑫孙艳戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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