Post-repair method of formamidino perovskite thin film

A technology of formamidinyl perovskite and amidinyl perovskite, which is applied in the field of preparation of thin film materials, can solve problems that are difficult to realize and unsuitable for industrial production, and achieve low roughness, simple preparation and repair, and high The effect of flatness

Active Publication Date: 2021-01-19
QINGDAO INST OF BIOENERGY & BIOPROCESS TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the method of preparing formamidinyl perovskite thin films is mainly based on spin coating and other processes, which is not suitable for future industrial production; in addition, traditional film forming technologies, such as spray coating, slit coating, printing and other technologies, are not suitable for preparing high-quality uniform films. Perovskite thin films are still difficult to realize because of the anisotropic precipitation characteristics of perovskite from solution to solid state.

Method used

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  • Post-repair method of formamidino perovskite thin film
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  • Post-repair method of formamidino perovskite thin film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] First, 300 cycles of TiO were deposited on cleaned FTO glass using atomic layer deposition equipment. 2 , the deposited FTO glass was heated at 500°C for 30 minutes to obtain dense TiO 2 film. Spin-coating SnO on dense thin films 2 Precursor solution (SnCl 4 aqueous solution), where SnO 2 The size of the micelle is about 12nm, the spin coating condition is 3000rpm, 30s, and then further heat treatment at 200°C for 30min to obtain dense SnO 2 film.

[0042] Secondly, according to the molar percentage 1:0.9:0.1 PbI 2 :FAI:CsI was dissolved in DMF solution to prepare a solution with a mass ratio of 50%, and then spin-coated on SnO 2 On the thin film, the annealing condition is 150°C, 10min, and the solvent in the thin film is volatilized to obtain FA 0.9 Cs 0.1 PB 3 film;

[0043] Then the prepared FA 0.9 Cs 0.1 PB 3 The film is post-treated with ammonia gas, specifically moving it into an atmosphere of ammonia gas (ammonia gas comes from a liquid ammonia cyli...

Embodiment 2

[0047] First, 300 cycles of TiO were deposited on cleaned FTO glass using atomic layer deposition equipment. 2 , the deposited FTO glass was heated at 500°C for 30 minutes to obtain dense TiO 2 film. Spin-coating SnO on dense thin films 2 Precursor solution (SnCl 4 aqueous solution), where SnO 2 The size of the micelle is about 12nm, the spin coating condition is 3000rpm, 30s, and then further heat treatment at 200°C for 30min to obtain dense SnO 2 film.

[0048] Secondly, according to the mole percentage of 0.94:0.06:1 PbI 2 :BiI 3 : FAI was dissolved in DMF solution to prepare a solution with a mass ratio of 50%, and then spin-coated on SnO 2 On the film, the annealing condition is 150°C, 10min, the solvent in the film is evaporated, and FABi is obtained 0.06 Pb 0.94 I 3 film;

[0049] Then the prepared FABi 0.06 Pb 0.94 I 3 The film is post-treated with ammonia gas, specifically, it is moved into an atmosphere of ammonia gas (ammonia gas comes from a liquid am...

Embodiment 3

[0053] First, 300 cycles of TiO were deposited on cleaned FTO glass using atomic layer deposition equipment. 2 , the deposited FTO glass was heated at 500°C for 30 minutes to obtain dense TiO 2 film. Spin-coating SnO on dense thin films 2 Precursor solution (SnCl 4 aqueous solution), where SnO 2 The size of the micelle is about 12nm, the spin coating condition is 3000rpm, 30s, and then further heat treatment at 200°C for 30min to obtain dense SnO 2 film.

[0054] Secondly, according to the molar percentage of 0.94:0.06:0.9:0.1 PbI 2 :BiI 3 :FAI:CsI was dissolved in DMF solution to prepare a solution with a mass ratio of 50%, and then spin-coated on SnO 2 On the thin film, the annealing condition is 150°C, 10min, and the solvent is evaporated to obtain FA 0.9 Cs 0.1 Bi 0.06 Pb 0.94 I 3 film;

[0055] Then the prepared FA 0.9 Cs 0.1 Bi 0.06 Pb 0.94 I 3 The film is post-treated with ammonia gas, specifically, it is moved into an atmosphere of ammonia gas (ammoni...

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Abstract

The invention belongs to a preparation method of a thin film material, and particularly relates to a post-repair method of a formamidino perovskite thin film through a post-gas repair mode. The methodcomprises the following steps: treating a formamidino perovskite (the structural formula is ABX3) initial film in ammonia gas, mixed gas containing the ammonia gas or a solution containing the ammonia gas for 0.1-30 minutes at 0-100 DEG C, thereby improving the uniformity of the formamidino perovskite film; introducing ammonia gas into the precursor solution forming the initial thin film to directly prepare the high-uniformity formamidino perovskite thin film. Compared with an evaporation method and a continuous deposition method, the process in the method is advantageous in that the processis easier to operate, low in cost and suitable for large-scale production; compared with an existing one-step solution method, the method has the advantages that large-area preparation can be achieved, and high crystallization quality is achieved; then the obtained film can be qualified for various device structures such as mesoporous and planar perovskite solar cells, diodes and lasers.

Description

technical field [0001] The invention belongs to a preparation method of a thin film material, in particular to a post-repair method of a formamidinyl perovskite film through a post-gas repair method. Background technique [0002] As a new generation of photovoltaic devices, perovskite solar cells have attracted the attention and research of researchers in related fields in recent years. As the light-absorbing layer of perovskite solar cells, organic-inorganic hybrid perovskite materials have the characteristics of long carrier diffusion length, small band gap, and excellent light absorption coefficient, and have excellent performance. Since 1999, the main researched organic-inorganic perovskite material system is methylamine lead iodide (MAPbI 3 ), MAPbI 3 Perovskite has a crystal transformation process of cubic crystal system and tetragonal crystal system at 55 °C, which has great limitations on practical applications. at ABX 3 In the perovskite crystal structure, the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/10H10K30/151Y02E10/549Y02P70/50
Inventor 逄淑平崔光磊李志鹏王啸
Owner QINGDAO INST OF BIOENERGY & BIOPROCESS TECH CHINESE ACADEMY OF SCI
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