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Method for preparing molybdenum ditelluride nanotubes

A molybdenum ditelluride and nanotube technology, applied in binary selenium/tellurium compounds, nanotechnology, metal selenide/telluride, etc., can solve problems such as restricting applications, achieve wide applicability, and be conducive to large-scale industrialization Production, uniform appearance effect

Active Publication Date: 2018-04-20
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the controllable preparation of molybdenum ditelluride nanotubes, the current preparation technology restricts their application

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A method for preparing molybdenum ditelluride nanotubes, comprising the following process steps:

[0019] 1) Spread 5g of molybdenum hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore diameter of 40nm downwards on top of the molybdenum hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and feed it with 100 SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, the temperature was raised to 100°C and kept for 60 minutes, and then the temperature was continued to be raised to 300°C and kept for 40 minutes to obtain metal molybdenum nanotube material, and the heating was stopped;

[0020] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the alumina template, place its opening downwards in a ceramic crucible filled with tellurium powder, seal the crucible and place it in a vacuum tube furnace. Under argon protection, r...

Embodiment 2

[0023] A method for preparing molybdenum ditelluride nanotubes, comprising the following process steps:

[0024] 1) Spread 5g of molybdenum hexacarbonyl on the bottom of the ceramic crucible, place a porous anodized aluminum template with a pore size of 200nm downwards on the top of the molybdenum hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and inject 100 SCCM of nitrogen Purge air from furnace tubes. Under the protection of nitrogen at 100SCCM, raise the temperature to 50°C and keep it for 200 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to obtain the metal molybdenum nanotube material, stop heating;

[0025] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the alumina template, place its opening downwards in a ceramic crucible filled with tellurium powder, seal the crucible and place it in a vacuum tube furnace. Under the protection of nitrogen, raise the temperature to 400...

Embodiment 3

[0028] A method for preparing molybdenum ditelluride nanotubes, comprising the following process steps:

[0029] 1) Spread 5g of molybdenum hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 60nm downwards on top of the molybdenum hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and pass it into 10SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 10 SCCM of argon gas, the temperature was raised to 150°C and kept for 30 minutes, and then the temperature was continued to be raised to 300°C and kept for 40 minutes to obtain metal molybdenum nanotube material, and the heating was stopped;

[0030] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the alumina template, and place its opening downwards in a ceramic crucible filled with tellurium powder. After sealing the crucible, place it in a vacuum tube furnace. Under argon protec...

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Abstract

The invention discloses a method for preparing molybdenum ditelluride nanotubes. The method comprises the following steps: 1) laying molybdenum hexacarbonyl to the bottom of a ceramic crucible, layinga porous anodic aluminum oxide mold plate with an opening facing downwards on the molybdenum hexacarbonyl, sealing the ceramic crucible, putting into a tubular furnace, performing low-temperature sublimation deposition in the presence of a gas, and continuously performing heating pyrolysis; 2) cooling the vacuum tubular furnace to the room temperature, putting the mold plate with the opening facing downwards into a ceramic crucible with tellurium powder, sealing the ceramic crucible, heating in the presence of the gas, and enabling a single substance, namely tellurium, to react with a metal,namely molybdenum, directly; 3) removing the excessive aluminum oxide mold plate and excessive tellurium by using a diluted acid solution, performing suction filtration treatment, and drying, therebyobtaining a finished product. The method disclosed by the invention is simple in step, free of environment pollution and free of complex equipment, a molybdenum ditelluride nanotube powder material prepared by using the method is good in size controllability, good in crystallinity and uniform in nanotube wall and morphology, and thus the comprehensive properties of a finished product of the molybdenum ditelluride nanotube powder material are greatly improved. The method is wide in applicability and beneficial to large-scale industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing semiconductor nanotubes. Background technique [0002] Molybdenum ditelluride is a binary transition metal chalcogenide, a gray solid with a layered structure. It was synthesized as early as the 1960s. Since it was impossible to prepare relatively pure molybdenum ditelluride materials, its layered structure was mainly used as a solid lubricant in various fields in the early days. With the advancement of technology, pure-phase molybdenum ditelluride materials can be prepared, and its excellent semiconductor performance has been paid attention to. Molybdenum ditelluride usually exists in two different crystal forms, namely, trigonal cylindrical structure (2H phase) and octahedral structure (including 1T, 1T' and Td phases). The difference in crystal structure leads to a completely different electronic structure between the two, so that the trigona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2004/13
Inventor 胡柱东林海敏
Owner FOSHAN UNIVERSITY
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