A structure and production method of reducing heterogeneous knot dual-crystal tube B-C knotted capacitance

A technology of heterojunction bipolar and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of the current gain cut-off frequency, the highest oscillation frequency, the increase of the base resistance Rb, etc. The effect of the highest oscillation frequency and strong size controllability
CN113078063BActive Publication Date: 2022-08-05XIAMEN SANAN INTEGRATED CIRCUIT
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIAMEN SANAN INTEGRATED CIRCUIT
Publication Date
2022-08-05

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention disclosed a structure and production method of reducing heterogeneous knot double -pole transistors B‑c knot capacitance. When making the base metal, first painting the first light barrier on the chip structureThe window, then coat the second light barrier, reduce the line width of the first window through the slightly shrinking and backflow process, etch the passivation layer in the first window to form the first opening, remove the third light obstruction and expose after removing the light resistance, and expose it.The second window formed on the first opening, and the line width of the second window is larger than that of the first opening, and then the deposit fund belongs to the second window and the base metal is formed in the first opening to remove the light resistance.The present invention has formed a base metal structure with width less than the top line. Without increasing the base resistance, the B -C edging area is reduced to reduce the effect of reducing the BAC connection capacitance, thereby improving the maximum oscillationfrequency.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductors, and in particular, to a structure and a manufacturing method for reducing the b-c junction capacitance of a heterojunction bipolar transistor. Background technique

[0002] With the development of HBT technology, higher requirements are put forward for high frequency parameters. There are two main high-frequency parameters, one is the current gain cut-off frequency (ft); the other is the highest oscillation frequency (fmax). The maximum oscillation frequency (fmax) is inversely proportional to the product of the base resistance (Rb) and the b-c junction capacitance (Cbc), so in order to increase the maximum oscillation frequency (fmax), the b-c junction capacitance (Cbc) and base resistance (Rb) must be reduced ). The traditional method of reducing the b-c junction capacitance (Cbc) is to directly reduce the base metal width (WB) by photolithography to reduce the BC junction area (Abc) a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More