A kind of nitride planar structure resonant tunneling diode and its preparation method

Abstract

The invention discloses a resonant tunneling diode of a nitride plane structure and a preparation method for the resonant tunneling diode. The diode comprises a substrate, an emitter electrode doped layer, an emitter electrode non-doped isolation layer, a double-barrier structure, a collector electrode non-doped isolation layer, a collector electrode doped layer, an emitter electrode, a collectorelectrode, and a passivation layer. The self-aligning technology is employed in the invention, and the overexposure and overdevelopment are carried out in the preparation process of a photoresist mask, thereby reducing the junction area, reducing the number of electric leakage channels in a device, and improving the stability of the device. The emitter electrode and the collector electrode form aplane structure, thereby avoiding the adverse impact on the electrode contact from etching damages. Photoetching just needs to be carried for two times in the whole process, thereby effectively reducing the technological difficulty, and speeding up the research and development progress.

Description

technical field [0001] The invention relates to resonant tunneling diode technology, in particular to a nitride planar structure resonant tunneling diode and a preparation method thereof. Background technique [0002] As an emerging science and technology, terahertz technology has important application prospects in safety detection, material identification, secure communication, space exploration, high-precision radar, tissue biopsy, and transient spectrum research. As a two-terminal device, the resonant tunneling diode can generate negative differential resistance by using the resonant tunneling phenomenon to prepare a terahertz radiation source, and has attracted extensive attention. At present, the relatively mature RTD technology is mainly based on GaAs material. Due to the inherent performance limitation of the material, the current power only reaches the microwatt level. GaN-based resonant tunneling diodes have the advantages of high electron velocity, high breakdown ...

AI Technical Summary

Problems solved by technology

However, at present, nitride-based resonant tunneling diodes face problems such as poor substrate quality, high defect density, serious leakage, and strong polarization field. The device has poor stability and low peak-to-valley current ratio, which greatly limits practical applications.

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