Preparation method for preparing gallium nitride schottky diode

Abstract

The invention provides a preparation method for preparing a gallium nitride schottky diode. According to the method, a passivation layer is deposited on the surface of a gallium nitride epitaxial wafer, and the cathode of a gallium nitride schottky diode is prepared. The center of the passivation layer is subjected to the dry etching process, so that a schottky contact hole is formed. In the schottky contact hole, the metal titanium is deposited on the surface of the passivation layer and the surface of the cathode, so that an ohmic metal layer is formed. The ohmic metal layer is subjected to lithography, etching and annealing, and then an ohmic metal structure of a grid-shaped structure is formed. The anode of the gallium nitride schottky diode is prepared. The ohmic metal structure is in the shape of a grid-shaped structure, and is wrapped by the anode. As a result, on the premise that the output performance of the gallium nitride schottky diode is not influenced at all, the area of a schottky junction is reduced. Therefore, the schottky contact resistance is reduced. Meanwhile, the device performance of the gallium nitride schottky diode is improved, and the lifetime of the gallium nitride schottky diode is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a gallium nitride Schottky diode. Background technique [0002] A Schottky diode is a semiconductor device made using a metal contact semiconductor layer. Compared with semiconductor diodes in the traditional sense, it has the characteristics of extremely short reverse recovery time. Therefore, Schottky diodes are widely used in switching power supplies, frequency converters, drives and other circuits. Gallium nitride material is the third generation wide bandgap semiconductor material. Because of its large bandgap width, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, it has become the ideal choice for the preparation of short-wavelength optoelectronics. The best material for devices and high-voltage high-frequency high-power devices. To sum up, the Schottky di...

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Problems solved by technology

[0004] The invention provides a method for preparing gallium nitride Schottky diodes, which is used to solve the problem that the Schottky contact resistance generated during the preparation process of the existing gallium nitride Schottky diodes will be much greater than the ohmic contact resistance , to achieve the beneficial effects of reducing Schottky contact resistance and improving the life of GaN Schottky diodes

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