The invention discloses a transistor based on an enhanced grid structure. The transistor comprises a substrate, a buffer layer, a GaN (gallium nitride) layer, a barrier layer, a source electrode, a drain electrode and a grid electrode, wherein the substrate, the buffer layer, the GaN layer and the barrier layer are sequentially stacked from bottom to top, the source electrode is arranged on an aluminum gallium nitride layer, the grid electrode is positioned between the source electrode and the drain electrode, and the barrier layer is AlGaN or InAlGaN, and the grid electrode is p-type Al1-xGaxN (0<=x<=1) or p-type In1-y-zGayAlzN (0<=y<=1; 0<=z<=1). A DLC (Diamond-like carbon) layer is arranged on the grid electrode, and the content of sp2 keys of DLC is higher than 50%. According to the transistor, enhanced operation is realized, the self-heating effect of a transistor device can be reduced by diamond-like carbon, and stability is improved. The invention further provides a preparation method of the transistor.