57results about How to "Suitable for practical production applications" patented technology

The invention discloses an on-line dry-process glass wool vacuum insulation board core material production system, which includes a melting furnace, a centrifuge, a cotton collector and a hot-pressing setting device. The hot-press setting device adopts the upper and lower chain plates to form a pressing gap, and the glass wool is pressed in the pressing gap, and can be continuously hot-pressed during the transmission process. The present invention also provides a production method based on the above production system. Compared with the prior art, the invention realizes on-line continuous production, has high production efficiency, and the prepared glass wool core material has stable structure and good heat insulation effect.

The invention discloses a gallium nitride based field effect transistor. The gallium nitride based field effect transistor comprises a substrate, a buffer layer, a GaN layer, an AlGaN layer, a source electrode, a drain electrode and a grid electrode located between the source electrode and the drain electrode which are sequentially stacked from bottom to top, wherein the source electrode and the drain electrode are arranged on the AlGaN layer, the grid electrode is made from conductive diamond-like carbon (DLC), and the spe key content in the conductive DLC is higher than 50%. The diamond-like carbon is used as a grid electrode material, so that the spontaneous heat effect of a grid electrode region is reduced, stability is improved, meanwhile a resistance value and polarity of the grid electrode are adjusted in a diamond-like carbon doping mode, and the purpose of enhanced work is achieved. The invention further discloses a preparation method of the transistor.

The invention discloses hot-water-dissolution type hot melt adhesive. The hot-water-dissolution type hot melt adhesive comprises 20-65% of polyvinyl alcohol, 20-50% of matrix resin, 3-25% of tackifying resin, 10-50% of plasticizer, 0-10% of filler and 2-5% of functional auxiliaries. The hot melt adhesive has the advantages that the hot melt adhesive is solid under normal temperature, the hot melt adhesive can have the adhesive ability when being heated to a softening point, the hot melt adhesive is resistant to normal-temperature water and can be dissolved and removed in high-temperature water of 60-95 DEG C, and the hot melt adhesive is special in performance and widely applicable. The invention further discloses a shielding structure manufactured by the hot-water-dissolution type hot melt adhesive and electrophoresis process using the shielding structure. Compared with traditional shielding ink, the shielding structure has the advantages that the shielding structure is easy in removing method, strong base or other corrosive substances are not needed, and influence on a paint film structure is avoided; various patterns can be formed according to needs, and simpleness in manufacturing process is achieved.

The invention discloses an opening type dephosphorization technique for industrial silicon slagging in atmosphere. The technique comprises calcium system slagging treatment and acid pickling treatment for silicon after slagging. The steps are as follows: putting bulk silicon materials into a medium-frequency induction melting furnace; adding slagging constituent for melting after melting silicon at high temperature; separating slag, firstly removing part P, and then soaking the silicon briquette after slagging in diluted aqua regia and forming powder; soaking in hydrofluoric acid, stirring and removing the other most part P. After the silicon is treated through the two steps, above 95% of impurities are removed. The technique is simple and mild.

The invention discloses a manufacturing method of an LED integrated package substrate. The manufacturing method comprises the following steps: forming via holes in a resin base single-sided copper-cladding plate through blind hole process, performing electroplating on a copper layer at the bottoms of the via holes to form solid copper columns, forming copper terminals through outward extension of the top ends of the copper columns, and performing exposure, development, etching and other steps through a photosensitive anti-plating etching film to form an LED package substrate finished product. Furthermore, the invention further discloses a double-sided copper-cladding LED package substrate finished product formed with a conductive film to adapt to different requirements of LED power and running temperature environment. According to the method, cost is low, and the manufactured LED integrated package substrate has high heat dissipation performance and high stability and is suitable for practical application.

The invention provides active heatproof copper-based brazing filler metal used for aluminum bronze / stainless steel brazing. The active heatproof copper-based brazing filler metal comprises, by weight, 20.0-23.0% of Mn, 10.0-13.0% of Ni, 21.0-25.0% of Ag, 0.5-2.0% of Zn, 0.2-0.4% of Si, 0.1-0.3% of P, 0.1-0.3% of B, 0.01-3.0% of active elements and the balance Cu; and the active elements include at least one of Zr, Li and Hf. The invention further provides a preparation method for the brazing filler metal. According to the active heatproof copper-based brazing filler metal used for aluminum bronze / stainless steel brazing and the preparation method thereof, heterogeneous brazing of aluminum bronze / stainless steel can be achieved, soldered joints are made to have good heat resistance, the brazing process performance is improved, and the cost is lowered.

The invention discloses a gallium-nitride transistor employing a gap-type composite passivation medium and a manufacturing method. The composite passivation medium technology is employed, and the composite passivation medium at least comprises a lower dielectric layer and an upper dielectric layer, which are stacked. Moreover, the upper and lower dielectric layers have different etching characteristics. A specific etching method is employed for enabling the window width of the lower dielectric layer to be greater than the window width of the upper dielectric layer, so as to introduce a gap structure in a single passivation layer or multiple passivation layers making contact with a semiconductor and achieve the physical separation of a gate metal with a passivation medium / semiconductor interface, thereby cutting off an electric leakage channel on the surface of a device, and reducing the gate electric leakage on the surface of the device. Meanwhile, the good passivation effect can be maintained while the cutting of the electric leakage channel on the surface is achieved through the control of the width of the gap structure.

The invention discloses a method for preparing biomass straw biogas and adopted devices thereof. The method comprises the following steps: (1) carrying out pretreatment on materials; (2) carrying out fermentation on the materials produced by the step 1; (3) carrying out dehydration treatment on primary gas; and (4) sending the gas produced by the step (3) to a gas holder. The preparation devices comprise an agitating tank (1), a feeding mechanism (4), a straw anaerobic tank (2) and the gas holder (3), wherein the inlet of the feeding mechanism (4) is connected with the cavity of the agitating tank (1); the outlet of the feeding mechanism (4) is connected with the cavity of the straw anaerobic tank (2); a gas-liquid separator (5) is arranged between the straw anaerobic tank (2) and the gas holder (3); the gas outlet of the straw anaerobic tank (2) is communicated with the gas inlet of the gas-liquid separator (5); and the gas outlet of the gas-liquid separator (5) is communicated with the gas inlet of the gas holder (3). The method has the advantages of wide raw material source, high calorific value, good safety and convenient production management and control.

The invention discloses an online dry-process production system of a glass wool vacuum insulation board core material, the online dry-process production system comprises a smelting furnace, a centrifuge, a cotton collecting machine, a heating furnace and a shaping device. The shaping device adopts upper and lower chain plates to cooperate to form a pressing gap. A glass wool layer heated by the heating furnace at high temperature is pressed in the pressing gap, and can be continuously hot-pressed in the process of transmission. The present invention also provides a production method based on the above production system. Compared with the prior art, online continuous production is realized, production efficiency is high, equipment cost is low, and the obtained glass wool core material has stable structure and good insulation effect.

The invention discloses a glass-based chip rewiring packaging structure, comprising a glass substrate, a chip provided with a first bonding pad, a filling layer, a metal rewiring layer, a passivationlayer and a second bonding pad, wherein a through hole penetrating through upper and lower parts is formed in the glass substrate, the chip is disposed in the through hole, and the first bonding pad faces upward; the filling layer is filled in an arrangement gap of the through hole and the chip, extends to cover the glass substrate and an upper surface of the chip, and is open corresponding to thearea of the first bonding pad; the metal rewiring layer is disposed on the filling layer and is connected with the first bonding pad; the passivation layer is disposed on the metal rewiring layer andis provided with an opening; and the second bonding pad is disposed on the passivation layer and is connected with the metal rewiring layer. The invention also discloses a manufacturing method thereof. The chip rewiring structure disclosed by the invention is compact, ultra-thin packaging can be realized, meanwhile glass is used as the main material, thereby being more suitable for high-frequency devices and realizing better electric performance. Complicated processes of temporary bonding and debonding are avoided in the process, the reliability is excellent, and the cost is lower.

The invention relates to a multi-chip fan-out packaging structure with a cavity and a manufacturing method of the multi-chip fan-out packaging structure. The multi-chip fan-out packaging structure comprises at least two chips, and the first surface of each chip is provided with a bonding pad and a functional region. The multi-chip fan-out packaging structure also comprises a first carrier, a second carrier, a filling layer, a metal rewiring layer, a first insulating layer, a second insulating layer and a signal port. The first carrier is connected to the first surface of the second carrier andis provided with a through hole; the chip is located in the through hole, and the second surface of the chip is connected to the first surface of the first carrier; the filling layer covers the firstcarrier and the first surface of the chip and is provided with a first opening; the first insulating layer covers the surface of the filling layer, so that the cavity is formed in the functional area, and a second opening is formed in the bonding pad; the metal rewiring layer is positioned on the upper surface of the first insulating layer and is electrically connected with the bonding pad; the second insulating layer covers the surfaces of the first insulating layer and the metal rewiring layer and is provided with a third opening; and the signal port is located at the third opening and is electrically connected with the metal rewiring layer. The structure can improve the packaging reliability, is small in size, and reduces the cost.

The invention discloses a microwave transistor of a patterned grid structure. The transistor is provided with a patterned region between the source electrode and the drain electrode of a barrier layer. Within the patterned region, the surface of the barrier layer partially concaves downwards along the thickness direction to form a plurality of grooves. A grid is arranged to cover the patterned region. The length of the grid is larger than the lengths of the grooves along the length direction of the grid, so that the grid can completely cover the grooves. On one hand, by means of the grooves, the grid control capability of a device is improved and the short-channel effect is suppressed. On the other hand, an original heterostructure below the grid is preserved. In this way, the reduction of the conductive capacity due to the density reduction of two-dimensional electron gas can be avoided. Therefore, the current output capability of the device is ensured while the short-channel effect is suppressed at the same time. The invention also discloses a manufacturing method of the above microwave transistor.

The invention discloses a method of preparing a high thermal-energy fuel or a diesel additive. The method includes the steps of pre-treating waste engine oil, performing emulsification with water, performing cross-dissolution washing with water repeatedly to take away colloids, ashes, pigments and other impurities from the waste engine oil, and finally modifying layered oil to form the high thermal-energy fuel or the diesel additive. The high thermal-energy fuel is high in combustion heat energy and has important application value. In addition, the diesel additive is good in intersolubility with diesel, and has the effects of improving power, promoting sufficient combustion, being good in cleaning and dispersion, and lubricating and protecting an engine. The method is easy to carry out and mild in conditions, is good in economic benefit and is suitable for practical application.

The invention discloses an extraction method of peony seed oil. Stir-fried peony seed powder is added to a salt solution of anhydrous sodium carbonate and sodium chloride, the mixture is slightly alkaline through pH adjustment after even mixing, alkaline protease is added for an enzymatic reaction, and upper-layer clear oil is obtained after centrifugation of an enzymatic hydrolysate. Sodium carbonate and sodium chloride are added to a water-enzyme reaction system of the alkaline protease, the salt effect produced under the combined action of the sodium carbonate and sodium chloride effectively inhibits formation of an emulsion layer, release of more oil is promoted, the oil yield of peony seed oil is increased, the stability of the oil quality is improved, the oil yield is 23% or above, refinement is realized during extraction, the acid value conforms to the national standard of edible vegetable oil quality, and the method is high in practicability.

The invention discloses a high-quality silicon carbide epitaxial growth technology. A plurality of silicon carbide buffer layers are sequentially homogeneously grown on a silicon carbide substrate bya chemical vapor deposition process, and a silicon carbide epitaxial layer is grown on the uppermost buffer layer, wherein the growth rate of all the buffer layers increases stepwise from bottom to top, and the growth rate of the top buffer layer is not higher than the growth rate of the epitaxial layer. Multiple buffer layers are formed through the stepped control of the growth rate, and a plurality of interfaces formed by the brief growth interruption among the buffer layers sequentially reduce the propagation of defects, so the extended propagation of the defects of the substrate to the epitaxial layer is blocked, the number of the defects in the epitaxial layer is reduced, the epitaxial quality is improved, and the characteristics and the yield of functional devices manufactured basedon above obtained epitaxial wafers are improved.

The invention discloses a renovating process of a high-pressure resin mold. The process comprises the steps that for a to-be-renovated high-pressure resin mold, an oxidation layer on the surface of the mold is removed by using oxalic acid, resin cleaning agents are sequentially adopted to clean greasy dirt and improve infiltration capability and water washing performance, a high-pressure mold cleaning agent is adopted to dissolve and disperse slurry residue sedimentation, residual oxidants are removed by adopting hydrochloric acid, residual oxalic acid and hydrochloric acid in the mold are bleached and neutralized by adopting sodium hypochlorite, for a special structure in the high-pressure resin mold, cleaning and renovating are conducted from the surface to the interior, so that the fully use of drug effect of each step is achieved to the optimal extent, the renovating degree of an old mold reaches 80%-90%, the ventilation amount is improved significantly, and online use can be continued to be conducted for 8000-10000 times.

The invention relates to the field of cables and discloses a rat and termite resistant cable material which is prepared from the following components in parts by weight: 60-80 parts of high density polyethylene, 40-60 parts of ethylene-vinyl acetate copolymer, 10-12 parts of polyethylene grafted maleic anhydride copolymer, 10-15 parts of white carbon black, 10-20 parts of plasticizer, 10-20 partsof fire retardant, 5-7 parts of stabilizer, 15-25 parts of rat and termite resistant agent and 1-3 parts of antioxidant. By adding the rat and termite resistant agent and compounding several plant extracts for expelling rats, killing termites and the like, through common effect of various principles of odour, toxicity and the like, the rat and termite resistant cable material is more comprehensivein preventing the rats and the termites and is better in effect; and meanwhile, by regulating other components and a ratio thereof of the cable material, the performance of the cable material is notlowered, and the rat and termite resistant cable material is simple in preparation technology, good in effect of a product and suitable for practical production application.

The invention discloses a repair material for a high-pressure resin mold. The repair material comprises 20%-28% of distilled water, 33%-40% of acrylic powder, 0.3%-0.8% of dibenzoyl peroxide, 17%-23% of glass powder, 15%-20% of methyl methacrylate and 0.1-0.5% of an emulsifier. The invention also discloses a process for regenerating a to-be-repaired high-pressure resin mold by using the repair material. The process comprises the following steps: after requiring a to-be-repaired place of the mold, casting the repair material at 15 and 20 DEG C and slowly curing the repair material at low temperature; and soaking the repaired mold in water with a temperature of 30 and 50 DEG C for 8-16 hours and cleaning the mold for subsequent usage. In the repaired place of the repaired high-pressure resin mold, bonding is smooth, cracking does not occur and uniform drainage is realized; the repaired high-pressure resin mold can be reused more than 2000 times; so recycling of the mold is realized, and ceramic production cost is reduced.

The invention relates to the field of sewage treatment, and discloses a magnetic treatment agent for sewage. The treatment agent is composed of the following components in parts by weight: 30-50 partsof ferroferric oxide nano magnetic particles, 30-50 parts of a polyethylene glycol chitosan graft, 1-5 parts of a Bi2MoO6 catalyst, and 10-25 parts of a dispersant, wherein the polyethylene glycol chitosan graft covers the surfaces of the ferroferric oxide nano magnetic particles, the Bi2MoO6 catalyst is supported on the polyethylene glycol chitosan graft, and the graft molar ratio of polyethylene glycol to chitosan is 1:1. The treatment agent for the sewage provided by the invention can degrade pollutants in a water body only by using sunlight, the utilization rate of solar energy is high, the activity is strong, the content of the pollutants in the water body can be effectively reduced, and the treatment agent has magnetism, is easy to recycle after being used, has good water solubility, strong adsorption capacity and a simple process, can be repeatedly utilized, reduces the costs, and is suitable for practical production application.

The invention discloses a water repellent agent for reducing a fruit cracking risk of picked cherries. The water repellent agent is mainly formed from the following raw materials in parts by weight: 12 to 18 parts of corn oil and 6 to 9 parts of sucrose ester. The invention also discloses a preparation and using method of the water repellent agent. According to the preparation and using method disclosed by the invention, the product, namely the water repellent agent which is safe to eat is researched and developed, a layer of hydrophobic water-coated film can be formed on the surface of each fruit so as to protect the fruit, and the fruit cracking risk caused by water expanding of the fruits is effectively reduced.

The invention discloses a water tank water cooling system for a permanent magnet synchronous draining pump, which comprises a closed water tank, wherein the closed water tank is a tank body designed according to the outer profile of the stator iron core of a permanent magnet synchronous water pump and has an accommodating cavity capable of accommodating the stator iron core; and a heat-conductingwall is formed on the stator iron core contacting part of the accommodating cavity, and the heat-conducting wall is made of metal material with high heat conductivity. The invention also discloses the permanent magnet synchronous water pump using the water tank water cooling system. In the invention, by arranging the independent water tank water cooling system in a pump body, the cooling liquid in a water cooling system and fluid pumped by the water pump are independent of each other, so that the impurities and scale in the pumped fluid are prevented from polluting the pump body and outside water of the machine. The box body is independently designed, can be detached and separated from the pump body, is convenient to clean and maintain, and can be matched with the water pump of the same model.

The invention discloses a preparation method of an ultra-fine diamond-graphene composite material. According to the method, ultra-fine diamond and graphene are mixed to form dispersion liquid; after the dispersion liquid is subjected to suction filtration into a film by a suction filtration device, vacuum heat treatment is performed for 0.5 to 2h at 800 to 1200 DEG C; the ultra-fine diamond-graphene composite material is obtained. The ultra-fine diamond and graphene composite material prepared by the invention has the advantages that the diamond surface is graphitized and forms carbon-carbon bonding with the graphene; the performance is stable. The composite material has very important scientific significance and engineering values for realizing the application of the diamond and the graphene in the fields of superfine material grinding tools, supercapacitors, field emission displays, semiconductor devices and the like.

The invention discloses a corrosion device for preparing a two-color film layer on a metal surface. The corrosion device comprises a tank mechanism, a liquid drewing mechanism and a control mechanism,a first tank body for containing metal products communicates with the bottom of a second tank body which is pumped with corrosive liquid, an overflow sensor is arranged at the edge of the first tankbody, and the partial surface of the metal products is subjected to corrosion treatment based on a connectivity principle and an overflow control method. The invention further provides a method basedon the corrosion device; the method comprises the steps that the metal products coated with a first color film layer is placed in the first tank body, and the corrosive liquid is entered the first tank body through buffering of the second tank body; a liquid level of the first tank body rises steadily and a rising speed is controllable so as to form a flat and uniform corrosion interface; and thensecond coloring treatment is performed on the corrosion part. The obtained products have a clear color boundary and an attractive appearance, and the method based on the corrosion device is particularly suitable for the production of the two-color film layer on the surface of irregular products or mesh structure products.

The invention discloses a structure for reducing the b-c junction capacitance of a heterojunction bipolar transistor and a manufacturing method thereof, and the method comprises the steps: firstly coating a chip structure with a first light resistor, exposing and developing the first light resistor to form a first window, then coating a second light resistor, and forming a second window; after the line width of the first window is reduced through a miniature and backflow process, etching the passivation layer in the first window to form a first opening, after the photoresist is removed, coating the passivation layer with a third photoresist, performing exposure and development to form a second window located on the first opening, wherein the line width of the second window is larger than that of the first opening; and depositing metal in the second window and the first opening to form base metal, and removing light resistance. The base metal structure with the bottom line width smaller than the top line width is formed, the b-c junction area is reduced under the condition that the base resistance is not increased, the effect of reducing the b-c junction capacitance is achieved, and therefore the highest oscillation frequency is improved.

The invention discloses a hollow fiber oxygen-dissolving membrane, whose components include a polymer, an oxygen-dissolving agent, an oxygen-transfer agent, etc., and is prepared by a heat-induced phase method or a solution phase transfer method. The invention also discloses an aeration component, which includes the membrane filament made of the aforementioned hollow fiber oxygen-dissolving membrane and at least one gas pipe. It enters the inner cavity of the membrane filament and diffuses into the water through its micropores. The hollow fiber oxygen-dissolving membrane of the present invention reduces the resistance of a dense water film formed by aerated air bubbles in water, promotes gas-liquid oxygen transfer, accelerates the speed of oxygen dissolved in water, has high oxygen utilization rate and low energy consumption.

The invention discloses a transistor based on an enhanced grid structure. The transistor comprises a substrate, a buffer layer, a GaN (gallium nitride) layer, a barrier layer, a source electrode, a drain electrode and a grid electrode, wherein the substrate, the buffer layer, the GaN layer and the barrier layer are sequentially stacked from bottom to top, the source electrode is arranged on an aluminum gallium nitride layer, the grid electrode is positioned between the source electrode and the drain electrode, and the barrier layer is AlGaN or InAlGaN, and the grid electrode is p-type Al1-xGaxN (0<=x<=1) or p-type In1-y-zGayAlzN (0<=y<=1; 0<=z<=1). A DLC (Diamond-like carbon) layer is arranged on the grid electrode, and the content of sp2 keys of DLC is higher than 50%. According to the transistor, enhanced operation is realized, the self-heating effect of a transistor device can be reduced by diamond-like carbon, and stability is improved. The invention further provides a preparation method of the transistor.

The invention discloses hot-water-dissolution type hot melt adhesive. The hot-water-dissolution type hot melt adhesive comprises 20-65% of polyvinyl alcohol, 20-50% of matrix resin, 3-25% of tackifying resin, 10-50% of plasticizer, 0-10% of filler and 2-5% of functional auxiliaries. The hot melt adhesive has the advantages that the hot melt adhesive is solid under normal temperature, the hot melt adhesive can have the adhesive ability when being heated to a softening point, the hot melt adhesive is resistant to normal-temperature water and can be dissolved and removed in high-temperature water of 60-95 DEG C, and the hot melt adhesive is special in performance and widely applicable. The invention further discloses a shielding structure manufactured by the hot-water-dissolution type hot melt adhesive and electrophoresis process using the shielding structure. Compared with traditional shielding ink, the shielding structure has the advantages that the shielding structure is easy in removing method, strong base or other corrosive substances are not needed, and influence on a paint film structure is avoided; various patterns can be formed according to needs, and simpleness in manufacturing process is achieved.

The invention relates to photoelectric control yarn feeding equipment, which comprises a motor controlled by a control circuit, a detector and a yarn storage device driven by the motor, wherein the detector comprises a pair of transmitting device and receiving device, wherein the transmitting device is arranged at one side of the yarn storage device and faces to a scanning area provided by the surface of the yarn storage device; and the receiving device is arranged opposite to the transmitting device and is positioned at the other side of the yarn storage device. Compared with the prior art, the photoelectric control yarn feeding equipment has the beneficial effects that through the matched detection of the transmitting device and the receiving device, if yarns exist on the yarn storage device, the receiving device can not receive a signal, if yarns do not exist on the yarn storage device, the receiving device can receive the signal; the detection method is very direct and simple; the detection results are direct and clear; the control circuit connected with the receiving device can control the motor to rotate and stop only through knowing whether a signal exists at the output end of the receiving device or not; and the control circuit becomes very simple and facilitates production and manufacturing.