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Dephosphorization technique for industrial silicon slagging

An industrial silicon and slagging technology, which is applied in the field of silicon purification, can solve the problems of long slagging time and difficulty in commercial use, and achieve the effects of low cost, saving equipment and manpower, and mild reaction conditions

Active Publication Date: 2016-12-07
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method takes too long to make slag, coupled with vacuum conditions, it is difficult to commercialize

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Slag processing

[0023] The silicon raw material is metallurgical grade silicon with a purity of 98% to 99% and a P content of about 5 to 200ppmv. The bulk silicon raw material is crushed to a size of 1-100mm, washed with deionized water, dried in an oven, and cooled to room temperature. Put the graphite crucible into the intermediate frequency furnace, lining the furnace, and clean the inner wall of the graphite crucible. Weigh 140 g of the above-mentioned bulk silicon material, put it into a graphite smelting crucible, turn on the intermediate frequency power supply, and raise the temperature to 1500 °C. After all the silicon blocks are melted, add the prepared and mixed 308g CaO 2 -SiO 2 -CaF 2 The slag-forming agent is evenly added into the smelting crucible in batches, and can be divided into 3 to 10 times, with an interval of 30s to 5min each time. After waiting for all the slag-forming agents to melt, smelt at a constant temperature for half an hour. Be...

Embodiment 2

[0030] 1. Slag processing

[0031] The silicon raw material is metallurgical grade silicon with a purity of 98% to 99% and a P content of about 5 to 200ppmv. The bulk silicon raw material is crushed to a size of 1-100mm, washed with deionized water, dried in an oven, and cooled to room temperature. Put the graphite crucible into the intermediate frequency furnace, lining the furnace, and clean the inner wall of the graphite crucible. Weigh 140 g of the above-mentioned bulk silicon material, put it into a graphite smelting crucible, turn on the intermediate frequency power supply, and raise the temperature to 1800°C. After all the silicon blocks are melted, add the prepared and mixed 100g CaO 2 -SiO 2 -CaF 2 The slag-forming agent is added into the melting crucible at one time. After waiting for all the slag-forming agents to melt, smelt at a constant temperature for 2 hours. The mixed material liquid is poured out at one time, and after cooling, the silicon material is t...

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Abstract

The invention discloses an opening type dephosphorization technique for industrial silicon slagging in atmosphere. The technique comprises calcium system slagging treatment and acid pickling treatment for silicon after slagging. The steps are as follows: putting bulk silicon materials into a medium-frequency induction melting furnace; adding slagging constituent for melting after melting silicon at high temperature; separating slag, firstly removing part P, and then soaking the silicon briquette after slagging in diluted aqua regia and forming powder; soaking in hydrofluoric acid, stirring and removing the other most part P. After the silicon is treated through the two steps, above 95% of impurities are removed. The technique is simple and mild.

Description

technical field [0001] The invention relates to silicon purification technology, in particular to an industrial silicon slag-making process for removing phosphorus. Background technique [0002] Photovoltaic power generation has the advantages of cleanliness, environmental protection, safety, and abundant resources. It can effectively alleviate problems such as energy crisis and environmental pollution. It is known as the most potential new energy in the 21st century. At present, the solar-grade silicon (SOG-Si) required for photovoltaic power generation is mainly produced by chemical processes such as improved Siemens. Although the purity is high, there are problems such as high cost, recycling of by-products, and possible environmental pollution. Physical metallurgy is one of the most potential methods for developing low-cost solar cells. It is characterized by low cost and a purity above 6N, which meets the purity requirements of solar-grade silicon materials. [0003] D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
CPCC01B33/037C01P2006/80
Inventor 陈朝程浩然
Owner XIAMEN UNIV
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