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Te-In-Hg photoelectronic detector

A photodetector, indium mercury telluride technology, applied in the field of optoelectronics, can solve the problems of device response speed, unfavorable bandwidth, large junction capacitance, etc., and achieve the effects of avoiding signal loss, reducing junction capacitance, and improving response speed.

Inactive Publication Date: 2009-06-10
CHINA AIR TO AIR MISSILE INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the relevant literature reported previously, the photodetectors made of indium mercury telluride materials all adopt a single Schottky p-n junction structure. Due to its large junction capacitance, it is unfavorable to the response speed and bandwidth of the device. Impact

Method used

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Examples

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Embodiment 1

[0031] 1) In the grown Indium Mercury Telluride Intrinsic Oxide Film + SiO 2 On the indium mercury telluride wafer of the passivation protection layer, the oxide film + SiO is removed by using photolithography technology and buffered hydrofluoric acid corrosion 2 The protective layer is passivated to form an interdigitated Schottky junction contact window with a finger width of 10 μm, a finger spacing of 10 μm, and a finger length of 2500 μm.

[0032] 2) A PECVD plasma oxidation method is used to grow a 15nm Indium Mercury Telluride intrinsic oxide layer in the Schottky contact window.

[0033] 3) A 150nm transparent metal electrode (ITO) film is evaporated or sputtered on the surface of the wafer by magnetron sputtering to form a Schottky junction contact with Indium Mercury Telluride.

[0034] 4) Use photolithography technology and lift-off process to remove the ITO film in the area other than the electrodes to form an interdigitated double Schottky junction contact electro...

Embodiment 2

[0037] In the grown oxide layer + SiO 2 On the passivation protective layer on the Indium Mercury Telluride wafer, use photolithography technology and buffered hydrofluoric acid corrosion to remove the Indium Mercury Telluride oxide film + SiO 2 After passivating the protective layer and forming an interdigitated Schottky junction contact window with a finger width of 2 μm, a finger spacing of 10 μm, and a finger length of 1000 μm, the rest of the process steps and parameters are the same as in Example 1.

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Abstract

The related Hg3In2Te photo detector comprises: a Hg3In2Te wafer, a passivated protective layer on front face of the wafer, a couple of opposite etching grooves throughout the protective layer, an anodization layer growing in groove, and a transparent metal electrode layer growing on surface of anodization layer to form a couple of electrodes. Compared with common single Schottky P-N junction detector, this invention reduces junction capacitance, and improves response speed and sensitivity greatly.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and relates to the manufacture of a photodetector with a structure made of semiconductor bulk crystal material. Background technique [0002] Mercury Indium Telluride (Hg 3-3x In 2X Te 3 ) is a ternary compound semiconductor material, its energy band structure is a direct band gap, it has high internal quantum efficiency, the forbidden band width is adjustable, and it is proportional to the component x and has a linear relationship. When the working temperature T=300K, Hg 3 In 2 Te 6 The forbidden band width of (x=0.5) is 0.74eV, and the corresponding cut-off wavelength is 1.67μm. The material has high parameter stability to ionizing radiation, and the concentration is 5×10 19 cm -3 The following input impurities are electrically passive. The near-infrared photodetector developed with this material has high sensitivity, strong radiation resistance, can work normally under harsh en...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/08
Inventor 孙维国鲁正雄张亮赵岚成彩晶赵鸿燕
Owner CHINA AIR TO AIR MISSILE INST
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