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Lateral SOI high voltage device with instantaneous dose rate radiation hardened structure

A radiation-hardened, high-voltage device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of wrong signal output, parasitic device opening, device burnout, etc., and achieve good compatibility, reduce strength, and reduce the number of effects

Active Publication Date: 2020-11-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The flow of photocurrent in the device may lead to the output of false signals; cause parasitic devices to turn on; in more serious cases, the device will burn out, resulting in catastrophic consequences

Method used

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  • Lateral SOI high voltage device with instantaneous dose rate radiation hardened structure
  • Lateral SOI high voltage device with instantaneous dose rate radiation hardened structure
  • Lateral SOI high voltage device with instantaneous dose rate radiation hardened structure

Examples

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Effect test

Embodiment 1

[0029] Such as figure 2 As shown, a lateral SOI high-voltage device with an instantaneous dose rate radiation-hardened structure in this embodiment includes a second-type impurity-doped semiconductor substrate 30; formed on the second-type impurity-doped semiconductor substrate 30 The buried oxide layer 20; the first type doped impurity drift region 40 and the second type doped impurity well region 31 formed on the buried oxide layer 20; the second type doped impurity well region 31 formed on the second type doped impurity well region The second type doped impurity contact region 32 and the first type doped impurity source region 42; the first type doped impurity well region 41 formed on the right side of the first type doped impurity drift region 40; The first type doped impurity drain region 43 formed in the first type doped impurity well region 41; the first type doped impurity drift region 40 formed at the junction of the second type doped impurity well region 31 The ins...

Embodiment 2

[0037] Such as image 3 As shown, the difference between this embodiment and Embodiment 1 is: the lower end surface of the insulating dielectric buried layer 23 is connected to the buried oxide layer 20, the insulating dielectric buried layer 23 intersects with the left edge of the second-type doped impurity well region 31, and the insulating The right side of the dielectric buried layer 23 intersects the right edge of the second type doped impurity well region 31 . This effectively reduces the area where electron-hole pairs are generated after the device is irradiated with the instantaneous dose rate, that is, the number of electron-hole pairs generated after the device is irradiated with the instantaneous dose rate is reduced, and the photocurrent is reduced.

Embodiment 3

[0039] Such as Figure 4As shown, the difference between this embodiment and Embodiment 1 is that the lower end surface of the insulating dielectric buried layer 23 is not connected to the buried oxide layer 20 . This also effectively reduces the area where electron-hole pairs are generated after the device is irradiated with the instantaneous dose rate, that is, the number of electron-hole pairs generated after the device is irradiated with the instantaneous dose rate is reduced, and the photocurrent is reduced.

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Abstract

The invention provides a lateral SOI high-voltage device with an instantaneous dose rate radiation-hardened structure, which includes a second-type doped impurity semiconductor substrate, a first-type doped impurity drift region, a second-type doped impurity well region, and a second-type impurity doped semiconductor substrate. Doped impurity contact region, first type doped impurity source region, first type doped impurity well region, first type doped impurity drain region, gate oxide layer, buried oxide layer, gate electrode, source electrode and drain electrode; An insulating dielectric buried layer is also provided at the junction of the second-type doped impurity well region and the first-type doped impurity drift region, and the lateral high-voltage device provided by the present invention can reduce the generation of instantaneous photocurrent and avoid parasitic effects Cause the burn of the device, so as to improve the ability of the device to resist the instantaneous dose rate radiation.

Description

technical field [0001] The invention belongs to the field of semiconductor power devices, in particular to a lateral high-voltage device with an instantaneous dose rate radiation-hardened structure. Background technique [0002] Integratable power devices represented by high-voltage LDMOS are widely used in various power electronic systems due to their advantages of easy integration and fast switching speed, and occupy an important position in aerospace, military and defense fields such as launch vehicles, satellites, and space stations. Circuit systems in these fields often face the impact of various radiations such as cosmic space radiation or nuclear explosions during work, and the resulting instantaneous dose rate radiation effect will cause strong transients in the device in a very short time photocurrent. The flow of photocurrent in the device may lead to the output of false signals; cause parasitic devices to turn on; in more serious cases, the device will burn out, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 周锌张凌芳李治璇王睿迪乔明张波李肇基
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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