A self-driven two-dimensional molybdenum telluride homoheterojunction near-infrared photodetector and preparation method thereof
A technology of homogeneous heterojunction and near-infrared light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex manufacturing process, non-self-driving, low detection rate, etc., and achieve mature and reliable technology, high sensitivity, easy The effect of control
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Embodiment 1
[0035] see figure 1 , the near-infrared photodetector of the present embodiment is provided with the bottom electrode 5 that is in ohmic contact with the N-type semiconductor substrate on the lower surface of the N-type semiconductor substrate 4, and the upper surface is covered with a mask layer 2; As an insulating material, a through hole is reserved in the center of the mask layer 2, and a two-dimensional molybdenum telluride thin film 3 is deposited in the through hole; the molybdenum telluride thin film is in contact with the N-type semiconductor substrate to form an N-N homogeneous heterojunction; On the upper surface of the molybdenum telluride thin film 3 is provided a top electrode 1 in ohmic contact with the N-type molybdenum telluride thin film.
[0036] Wherein, the N-type semiconductor substrate 4 of this embodiment is an N-type lightly doped silicon wafer, and the mask layer 2 is a silicon oxide layer. A lightly doped silicon wafer with a silicon oxide thickness...
experiment example 2
[0055] see figure 1 , the near-infrared photodetector of this embodiment has the same device structure as that of Embodiment 1, the only difference being that the N-type semiconductor substrate is N-type lightly doped gallium arsenide, and the mask layer is an aluminum oxide layer.
[0056] The near-infrared photodetector of the present embodiment is prepared as follows:
[0057] (1) At room temperature, N-type lightly doped gallium arsenide (with a resistance of 1-10Ω) was ultrasonically cleaned with acetone, alcohol, and deionized water for 5 minutes, and then dried with a nitrogen gun. An aluminum oxide layer with a thickness of about 200nm is evaporated on the upper surface of gallium arsenide by electron beam deposition technology as a mask layer, and a through hole with a diameter of 1 cm is left in the center of the aluminum oxide layer as a telluride molybdenum deposits;
[0058] (2) Use electron beam sputtering technology to sputter an Au electrode with a thickness ...
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