Electron-hole reversible doping method of multilayer molybdenum ditelluride field effect transistor
A field-effect transistor and molybdenum ditelluride field technology, which is applied in the control field of electron transport performance transformation, can solve the problems of complex control methods, small control range, and limited tuning range, and achieve simple and convenient process and operating conditions, and high-quality materials. Less damage, environment-friendly effect
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Embodiment 1 2
[0034] Embodiment 1 Electron-hole reversible doping of molybdenum ditelluride field effect transistor
[0035] (1)MoTe 2 Fabrication of Field Effect Transistor Devices:
[0036] By mechanical exfoliation, the bulk MoTe 2 The layered crystals are placed on the tape, and the tape is pasted and torn repeatedly; the MoTe 2 A thin layer of adhesive tape is pressed on the polydimethylsiloxane (PDMS, polydimethylsiloxane) film. Due to the stickiness on the surface of the PDMS film, a small amount of MoTe 2 The thin layer was transferred onto the PDMS membrane; the clean surface layer was 300nm of SiO 2 silicon wafer (denoted as SiO 2 / Si substrate) pressed onto the PDMS film, then there will be a small amount of MoTe 2 Thin layer transfer to SiO 2 / SiO in Si substrate 2 on the surface of the layer;
[0037] Observation of SiO under an optical microscope 2 / Si substrate, determined thin layer MoTe 2 The position of the crystal; spin coating at this position (the first time: ...
Embodiment 2 2
[0044] Embodiment 2 Electron-hole reversible doping of molybdenum ditelluride field effect transistor
[0045] Basically the same as embodiment 1, the difference is only that step (2) takes the following method:
[0046] (2)MoTe 2 P-type doping (hole doping) of field effect transistor devices:
[0047] The MoTe prepared by step (1) 2 The field effect transistor device is placed on a heating platform that has been preheated to the target heating temperature, and the target heating temperature is maintained and heated in the air for 1.5min. The target heating temperature is 423K, and P-type doped MoTe is obtained. 2 field effect transistor devices. After the obtained device was cooled to room temperature, the electrical performance test was carried out in air.
Embodiment 3 2
[0048] Embodiment 3 Electron-hole reversible doping of molybdenum ditelluride field effect transistor
[0049] (1)MoTe 2 Fabrication of Field Effect Transistor Devices:
[0050] By mechanical exfoliation, the bulk MoTe 2 The layered crystals are placed on the tape, and the tape is pasted and torn repeatedly; the MoTe 2 A thin layer of adhesive tape is pressed on the polydimethylsiloxane (PDMS, polydimethylsiloxane) film. Due to the stickiness on the surface of the PDMS film, a small amount of MoTe 2 The thin layer was transferred onto the PDMS membrane; the clean surface layer was 300nm of SiO 2 silicon wafer (denoted as SiO 2 / Si substrate) pressed onto the PDMS film, then there will be a small amount of MoTe 2 Thin layer transfer to SiO 2 / SiO in Si substrate 2 on the surface of the layer;
[0051] Observation of SiO under an optical microscope 2 / Si substrate, determined thin layer MoTe 2 The position of the crystal; spin coating at this position (the first time: ...
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