Optical detector based on second-class Weyl semimetal molybdenum ditelluride and detection method of optical detector

A technology of Weyl semimetal and molybdenum ditelluride, which is applied in the field of photodetectors based on the second type of Weyl semimetal molybdenum ditelluride, can solve the problems of non-trivial topology and achieve low dark current and sensitive responsivity , the effect of broad application prospects

Active Publication Date: 2019-06-11
PEKING UNIV
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Problems solved by technology

Although Weyl semimetals have no energy gap, they still exhibit topologically nontrivial behavior

Method used

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  • Optical detector based on second-class Weyl semimetal molybdenum ditelluride and detection method of optical detector
  • Optical detector based on second-class Weyl semimetal molybdenum ditelluride and detection method of optical detector
  • Optical detector based on second-class Weyl semimetal molybdenum ditelluride and detection method of optical detector

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Embodiment Construction

[0043] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0044] Such as figure 1 As shown, the photodetector based on the second type of Weyl semimetal molybdenum ditelluride in this embodiment includes: a substrate 1, a molybdenum ditelluride nanosheet 2, a first metal electrode 3 and a second metal electrode 4; wherein, Molybdenum ditelluride nanosheets 2 are arranged on the non-conductive surface of the substrate 1; first and second metal electrodes 3 and 4 are respectively arranged at both ends of the molybdenum ditelluride nanosheets; the first and second metal electrodes are respectively connected to External detection circuit A.

[0045] In this embodiment, the substrate 1 includes a highly doped silicon conductive layer and an insulating layer thereon, and the insulating layer is silicon dioxide SiO 2 , the highly doped silicon conductive layer adopts P-type doping or N-type doping; th...

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Abstract

The invention discloses an optical detector based on second-class Weyl semimetal molybdenum ditelluride and a detection method of the optical detector. According to the optical detector, a molybdenumditelluride nanosheet is adopted to serve as a light detection material, wherein the molybdenum ditelluride nanosheet is a zero-gap material and is wide in detection spectrum range, bias voltage doesnot need to be added and cannot be added, and the material has sensitive responsivity under room temperature; the detector is sensitive to a polarized light direction and can be used for polarizationdetection; the detector can be applied to the fields of infrared imaging, military reconnaissance, night vision goggles, etc. and has broad application prospects in terms of military equipment; besides, it is needed to be specially pointed out that the optical detector based on the material can make a rather high light current response without the need for providing bias voltage, and the dark current is quite low; and moreover, the bias voltage cannot be added to the optical detector, or otherwise a background current can be generated, it is not needed to provide a low-temperature environmentfor the optical detector based on the material, and therefore miniaturization and economy of the detector are benefited a lot.

Description

technical field [0001] The invention relates to a photodetector, in particular to a photodetector based on the second type of Weyl semimetal molybdenum ditelluride and a detection method thereof. Background technique [0002] Photodetector is a device that converts optical signals into electrical signals. It can detect and image luminous objects. It is widely used in imaging systems, military detectives, forest fire prevention, satellite remote sensing, and telecommunication. Photodetectors are generally photoelectric conversion devices made using the photoconductive effect of semiconductor materials. The so-called photoconductive effect refers to a physical phenomenon in which the conductance of a semiconductor material changes after it absorbs light radiation. The band gap of the semiconductor material determines the light detection wavelength range of the photodetector. Only when the energy of the photons is greater than the forbidden band width of the semiconductor, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J3/28G01J3/00G01J4/00G01J4/04G01J5/00G01J5/10H01L31/0296H01L31/10
Inventor 孙栋赖佳伟马骏超
Owner PEKING UNIV
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