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Confinement chemical vapor deposition preparation method of two-dimensional molybdenum ditelluride nano material

A chemical vapor deposition, molybdenum ditelluride technology, applied in binary selenium/tellurium compounds, nanotechnology, metal selenide/telluride, etc., can solve the problem of low experiment repetition rate, poor product stability, and low chemical reaction driving force and other problems, to achieve broad application prospects, stable and controllable process, and good experimental stability.

Active Publication Date: 2021-09-24
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since MoTe 2 The chemical bond energy of Mo-Te is weak, resulting in the formation of MoTe 2 The chemical reaction driving force is low, and the product stability is compared with other Mo-based sulfide two-dimensional materials (such as MoS 2 、MoSe 2 ) is worse, so the existing CVD method to prepare high-quality thin-layer MoTe 2 There are still the following significant limitations, including (1) narrow reaction window, resulting in harsh requirements for the stability of experimental conditions, and low experimental repetition rate; (2) MoTe 2 The grain size of the product is small; (3) It is difficult to obtain a uniformly distributed product in a large area of ​​the substrate; (4) Thin layer MoTe 2 Difficult to obtain and preserve, especially single-layer products with a thickness of only a few nanometers or thinner

Method used

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  • Confinement chemical vapor deposition preparation method of two-dimensional molybdenum ditelluride nano material
  • Confinement chemical vapor deposition preparation method of two-dimensional molybdenum ditelluride nano material
  • Confinement chemical vapor deposition preparation method of two-dimensional molybdenum ditelluride nano material

Examples

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Embodiment 1

[0045] Preparation of MoTe by Chemical Vapor Deposition 2 method, including the following steps:

[0046] 1) Perform hydrophilic pretreatment on the growth substrate: Cut the silicon substrate with a 280nm thick oxide layer into two silicon wafers with a size of 2cm×1.5cm, and put them in a plasma cleaning machine for surface treatment to make them have Hydrophilicity, set the parameters of the oxygen plasma cleaning machine to the oxygen flow rate of 400sccm, the plasma cleaning power to 40W, and the cleaning time to 50s;

[0047] 2) Introduce sodium molybdate as a molybdenum source: prepare a sodium molybdate solution with a concentration of 0.02 mol / L, put the beaker containing the solution into an ultrasonic instrument, and perform ultrasonication for 5 minutes to make the solution uniform. Put the silicon wafer obtained in step 1 on the spin coater, turn on the vacuum pump to suck it and fix it in the middle of the spin coater, set the spin coater parameters as the first...

Embodiment 2

[0052] Embodiment 2: namely the comparative example of the present invention, the operation steps are the same as above, the difference is that the slit spacing of two stacked silicon wafers is set to 520 microns, and its product is as follows Figure 7 As shown, the size of the product is smaller, the nucleation density is lower, and the morphology is close to one-dimensional. Compared with the product in the confined environment (slit spacing of 1-30 μm), it proves that the confined chemical vapor deposition The method is beneficial to the growth of the product, and increases the nucleation density and grain size of the product.

[0053] Examples 2-15 mainly study the preparation of two-dimensional MoTe by chemical vapor deposition 2 During the process, the carrier gas flow rate, confinement slit size, substrate pair synthesis of 2D MoTe 2 The impact of the product, including its size, nucleation density, coverage, thickness, shape, phase, etc. The specific implementation ...

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Abstract

The invention generally relates to the technical field of two-dimensional material preparation, and provides a confinement chemical vapor deposition preparation method of a two-dimensional molybdenum ditelluride (MoTe2) nano material, which comprises the following steps of: (1) preparing two substrates, and marking the substrates as a substrate A and a substrate B; and carrying out plasma surface treatment on the polished surface of the substrate A; (2) coating the surface of the treated substrate A with a sodium molybdate solution to form a sodium molybdate coating; (3) constructing a confinement growth environment: overlapping the sodium molybdate coating surface of the substrate A and the polished surface of the substrate B in a face-to-face manner, with the substrate B being on the top, to form a laminated substrate with a micron-order slit (1-30 microns); (4) enabling the tellurium powder to be firstly heated into tellurium steam through arrangement of the placement position, and then enabling the tellurium steam and a molybdenum source, rapidly introduced into the heating area, in the laminated substrate to react in a confinement and grow; and (5) sampling: after a quartz tube is cooled to room temperature, taking out the laminated substrate, and obtaining two-dimensional MoTe2 on the surface of the substrate B.

Description

technical field [0001] The present invention generally relates to the technical field of preparation of two-dimensional materials, in particular to a method for preparing two-dimensional molybdenum ditelluride nanomaterials by confined chemical vapor deposition. Background technique [0002] Following graphene, transition metal chalcogenide compounds (TMDC), as a new generation of two-dimensional layered materials, have attracted extensive attention from researchers in many fields such as physics and chemistry due to their unique crystal structure and energy band structure. Molybdenum ditelluride (MoTe 2 ), as a member of the family of transition metal chalcogenides, has been widely used in optoelectronics, catalysis and other fields due to its excellent physical and chemical properties. The characteristics of two-dimensional molybdenum ditelluride can be summarized as follows: [0003] (1) Single-layer MoTe 2 It is a Te-Mo-Te structure similar to a sandwich; [0004] (2...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCC01B19/007B82Y40/00C01P2004/20C01P2004/02C01P2004/03C01P2004/04C01P2002/82
Inventor 王珊珊徐淘李守恒江天程湘爱
Owner NAT UNIV OF DEFENSE TECH
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