Thin film transistor, detecting device and method of detecting device for detecting pressure or illumination

A technology of thin-film transistors and detection devices, which is applied in transistors, photometry using electric radiation detectors, fluid pressure measurement using piezoelectric devices, etc., can solve the problems that sensors are difficult to distinguish and difficult to meet requirements, and achieve good results. Sensitivity to light and pressure, and the effect of improving precision

Active Publication Date: 2018-11-13
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the basic structure, technology and performance of traditional optical and mechanical sensors are difficult to meet people's requirements in the field of artificial intelligence or wearable electronics; to distinguish

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  • Thin film transistor, detecting device and method of detecting device for detecting pressure or illumination
  • Thin film transistor, detecting device and method of detecting device for detecting pressure or illumination
  • Thin film transistor, detecting device and method of detecting device for detecting pressure or illumination

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus their repeated descriptions will be omitted. The words expressing position and direction described in the present invention are all described by taking the accompanying drawings as an example, but changes can also be made according to needs, and all changes are included in the protection scope of the present invention. The accompanying drawings of th...

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Abstract

The invention discloses a thin film transistor, a detecting device and method of the detecting device for detecting pressure or illumination, which are used for improving the photosensitive property and pressure sensing performance of the thin film transistor, thereby helping improve the accuracy of pressure or illumination detection. The thin film transistor provided by the invention of embodiment comprises a substrate, a semiconductor layer, a grid, and a source drain arranged on the substrate, and the materials of the semiconductor layer comprise molybdenum ditelluride.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a thin film transistor, a detection device and a method for detecting pressure or light. Background technique [0002] In recent years, with the rapid development of artificial intelligence, wearable electronic devices, and the Internet of Things, sensor detection equipment has received more and more attention, and the performance requirements of sensors have become higher and higher, making research directions multi-type, It can be developed in the direction of flexibility and small size. Among them, optical and mechanical sensors are widely used in intelligent bionic robots, wearable and other fields because they can perceive changes in optical and mechanical signals. [0003] However, the basic structure, technology and performance of traditional optical and mechanical sensors are difficult to meet people's requirements in the field of artificial intelligence or wearabl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G01J1/42G01L1/16G01L9/08
CPCG01J1/42G01L1/16G01L9/08H01L29/786
Inventor 李广耀闫梁臣王东方汪军王庆贺胡迎宾刘宁
Owner BOE TECH GRP CO LTD
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