Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation of a molybdenum ditelluride nanowire material and molybdenum ditelluride nanowire material

A molybdenum ditelluride and nanowire technology, which is applied in the field of nanomaterials, can solve problems such as unsynthesized molybdenum ditelluride nanowires and the like, and achieve the effect of a simple preparation process

Active Publication Date: 2021-06-29
NORTHWEST UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, some scientific researchers have engaged in the preparation of two-dimensional molybdenum ditelluride materials and achieved certain results, but have not synthesized one-dimensional molybdenum ditelluride nanowires.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of a molybdenum ditelluride nanowire material and molybdenum ditelluride nanowire material
  • Preparation of a molybdenum ditelluride nanowire material and molybdenum ditelluride nanowire material
  • Preparation of a molybdenum ditelluride nanowire material and molybdenum ditelluride nanowire material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This embodiment provides a method for preparing molybdenum ditelluride nanowires on a silicon dioxide / silicon substrate, comprising the following steps:

[0032] Step 1: Cut the silica / silicon substrate into a 1cm*3cm sheet and blow it off with an air gun;

[0033] Step 2: Grind molybdenum powder and tellurium powder at a molar ratio of 1:4, mix well, place 2 mg of mixed powder on a silicon dioxide / silicon substrate, and add 0.1 mg of sodium chloride; A silicon dioxide / silicon substrate, SiO 2 Face down, upside down on the wafer;

[0034] Step 3: Place two silica / silicon substrates in a quartz tube with an inner diameter of 1.2 mm and one-end sealing, place the single-end-sealed quartz tube at the heating center of the tube atmosphere furnace, and single-end-seal the quartz tube The opening faces the side of the exhaust port, such as figure 1 as shown in a.

[0035] Step 4: Infuse 100 sccm of argon gas for 30 minutes to completely remove residual oxygen in the tube....

Embodiment 2

[0038] This embodiment provides a method for preparing molybdenum ditelluride nanowires on a silicon dioxide / silicon substrate, comprising the following steps:

[0039] Step 1: Cut the silica / silicon substrate into a 1cm*3cm sheet and blow it off with an air gun;

[0040] Step 2: Grind molybdenum powder and tellurium powder at a molar ratio of 1:12, mix them evenly, place 3 mg of mixed powder on a silicon dioxide / silicon substrate, and add 0.2 mg of sodium chloride; A silicon dioxide / silicon substrate, SiO 2 Face down, upside down on the wafer;

[0041] Step 3: Place two silica / silicon substrates in a quartz tube with an inner diameter of 1.2 mm and one-end sealing, place the single-end-sealed quartz tube at the heating center of the tube atmosphere furnace, and single-end-seal the quartz tube The opening faces the side of the exhaust port, such as figure 1 as shown in a.

[0042] Step 4: Infuse 100 sccm of argon gas for 30 minutes to completely remove residual oxygen in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation of a molybdenum ditelluride nanowire material and a molybdenum ditelluride nanowire material. A silicon dioxide / silicon chip is used as a substrate, and molybdenum powder and tellurium powder are used as raw materials. Molybdenum ditelluride nanowires are grown on the silicon surface by chemical vapor deposition; the growth container of the molybdenum ditelluride nanowires is a quartz tube, and a mixed gas of argon and hydrogen is introduced into the quartz tube; A quartz test tube is also set, the sealed end of the quartz test tube is opposite to the flow direction of the mixed gas, and the quartz test tube is used to place the substrate for chemical vapor deposition; the flow rate of argon is 100 sccm; the flow rate of hydrogen is 5-30 sccm; the reaction of chemical vapor deposition The temperature is 600-800°C. The process is simple, the cost is low, and the molybdenum ditelluride nanowires are of high quality.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and relates to the preparation of a molybdenum ditelluride nanowire material and the molybdenum ditelluride nanowire material. Background technique [0002] Molybdenum ditelluride is an important member of the family of transition metal dichalcogenides TMDs. It is a new type of two-dimensional material. It has attracted widespread attention due to its unique electrical and optical properties. Composed of molybdenum atoms in the middle, tellurium atoms in the upper and lower layers, the molybdenum atom layer in the middle is sandwiched between the upper and lower tellurium atoms, forming a sandwich structure together, in the layer, molybdenum atoms and six tellurium atoms pass through of covalent bonds. Molybdenum ditelluride semimetal is a quantum spin Hall insulator with a large band gap, which can be used in field effect transistors. In addition, due to the overlap of energy bands and Fermi ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2002/82C01P2004/16
Inventor 许曼章张志勇刘政赵武闫军锋贠江妮翟春雪郭昱希李强王学文郑璐
Owner NORTHWEST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com