Miniature piezoresistive type stress sensor based on tungsten diselenide

Abstract

Disclosed is a miniature piezoresistive type stress sensor based on tungsten diselenide. The miniature piezoresistive type stress sensor comprises a boron nitride layer, a metal electrode, a tungstendiselenide layer and a flexible substrate which are arranged in sequence from the top to bottom; the two ends of the tungsten diselenide layer are connected with the metal electrode; the upper surfaceof the tungsten diselenide layer is completely covered with the boron nitride layer; and the tungsten diselenide layer is a two-dimensional material, namely only single-layer atoms or a few layers ofatoms are arranged in the thickness direction, wherein the number of a few layers is 1-10. According to the miniature piezoresistive type stress sensor, tungsten diselenide is used as a core sensitive material, and stress detection is performed based on the characteristic (the piezoresistive property) that tungsten diselenide is sensitive to stress; and boron nitride is used as a protection layer, so that the stress sensor has the characteristics of high bending resistance, relatively high measuring range, high sensitivity, small size, easy processing, high long-term stability and the like.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a micro piezoresistive stress sensor based on tungsten diselenide, which adopts tungsten diselenide as a core sensitive material, and utilizes its piezoresistive characteristics for stress detection. Background technique [0002] Traditional piezoresistive stress sensors usually use metal or silicon as the core sensitive material. The piezoresistive effect of metal materials mainly depends on the change of their own geometric dimensions, so the gauge factor is very small and the sensitivity is poor; the gauge factor of silicon is much larger than that of metal, but the fracture strain is small, and it is prone to fracture under large deformation, so the stress range that can be measured smaller. [0003] With the development of microelectronics technology, more and more micro piezoresistive stress sensors based on microelectromechanical systems (MEMS) are gradually developed. It h...

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