Method for growing multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition

A technology of chemical vapor deposition and tungsten diselenide, which is applied in the field of two-dimensional materials, can solve the problems of insufficient quality, small single-layer size, and inability to realize double-layer and multi-layer controllable growth, so as to simplify equipment conditions and use effective effect

Active Publication Date: 2020-06-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the growth and preparation of two-dimensional transition metal sulfides, the traditional chemical vapor deposition method still has a series of problems that need to be solved, such as insufficient quality, insufficient size, and insufficient performance: most of the grown tungsten diselenide films are It is a single layer and the size of the single layer is small; the controllable growth of double layers and multilayers cannot be realized; the development of miniaturization, light weight and simplification is limited for multi-temperature zones that require chemical vapor deposition equipment

Method used

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  • Method for growing multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition
  • Method for growing multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition
  • Method for growing multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition

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Effect test

Embodiment 1

[0051] Taking the growth of double-layer tungsten diselenide as an example, this example provides a method for growing double-layer tungsten diselenide by halide molten salt assisted chemical vapor deposition. The equipment diagram is as follows figure 1 As shown, the specific operation steps are as follows:

[0052] 1. Cleaning the substrate: Clean the pre-prepared sapphire substrate in the order of acetone, isopropanol, and deionized water, each ultrasonic cleaning for 10 minutes, and blow dry with a nitrogen gun after each step. Put it into a plasma cleaning machine for the final cleaning process. The parameter flow rate of argon gas is set to 40 standard milliliters per minute, the oxygen is 10 standard milliliters per minute, the power is a medium power of 10.15 watts, and the processing time is 3 minutes for a long time. After the cleaning process is completed, the entire sapphire substrate is cut into pieces of appropriate size on the processing table to match the corun...

Embodiment 2

[0068] In this embodiment, the mass and distance settings of the source are mainly changed, corundum boats with different boat depths are used, and the halide is selected as sodium chloride. This embodiment specifically includes the following steps:

[0069] 1. Cleaning the substrate: Clean the pre-prepared sapphire substrate in the order of acetone, isopropanol, and deionized water, each ultrasonic cleaning for 10 minutes, and blow dry with a nitrogen gun after each step. Put it into a plasma cleaning machine for the final cleaning process. The parameter flow rate of argon gas is set to 40 standard milliliters per minute, the oxygen is 10 standard milliliters per minute, the power is a medium power of 10.15 watts, and the processing time is 3 minutes for a long time. After the cleaning process is completed, the entire sapphire substrate is cut into pieces of appropriate size on the processing table to match the corundum boat.

[0070] 2. Weigh the sample: Use an electronic s...

Embodiment 3

[0076] In this embodiment, the type of halide is mainly changed, potassium iodide is selected as the halide, corundum boats with different boat depths are used, and the distance setting is changed. This embodiment specifically includes the following steps:

[0077] 1. Cleaning the substrate: Clean the pre-prepared sapphire substrate in the order of acetone, isopropanol, and deionized water, each ultrasonic cleaning for 10 minutes, and blow dry with a nitrogen gun after each step. Put it into a plasma cleaning machine for the final cleaning process. The parameter flow rate of argon gas is set to 40 standard milliliters per minute, the oxygen is 10 standard milliliters per minute, the power is a medium power of 10.15 watts, and the processing time is 3 minutes for a long time. After the cleaning process is completed, the entire sapphire substrate is cut into pieces of appropriate size on the processing table to match the corundum boat.

[0078]2. Weigh the sample: Use an electr...

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Abstract

The invention belongs to the field of two-dimensional materials. The invention discloses a method for growing a multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition. According to the method, a preset temperature condition is utilized, when a small reaction chamber is under the preset temperature condition, a halide can be molten and react with a tungstensource material to generate an intermediate product with the melting point lower than that of the tungsten source material, and a carrier gas flow can carry gaseous selenium generated by a selenium source material and gaseous tungsten generated by the intermediate product to grow the multi-layer tungsten diselenide single crystal on a substrate based on the chemical vapor deposition principle. According to the invention, key reaction participants and the reaction chamber of the preparation method are improved, halide and a tungsten source material are mixed to participate in reaction, halide molten salt and the tungsten source material react to generate an intermediate product with the melting point lower than that of the tungsten source material, chemical vapor deposition can be effectively controlled to grow the multilayer tungsten diselenide single crystal, the controllability is good, and a multilayer tungsten diselenide single crystal with a large size can be prepared.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, more specifically, relates to a method for molten salt-assisted chemical vapor deposition growth (CVD) multilayer tungsten diselenide single crystal, especially a molten salt-assisted single-temperature zone chemical vapor deposition growth method Method for multilayer tungsten diselenide single crystal. Background technique [0002] Transition metal dichalcogenides (TMDC) are compounds with a two-dimensional structure, and transition metal dichalcogenides also have a two-dimensional structure. Taking molybdenum sulfide or tungsten sulfide as an example, molybdenum and tungsten atoms are arranged in a single layer, sandwiched by sulfur elements in the same layered structure. The interaction force between layers is van der Waals force, while the interior of molecules is a covalent bond formed by electrostatic interaction force. For most 2D materials, their preparation methods mainly fall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/46C30B33/00C23C16/30C23C16/448C23C16/455C23C16/56
CPCC23C16/305C23C16/448C23C16/455C23C16/56C30B25/00C30B29/46C30B33/00
Inventor 吴燕庆宋健李学飞
Owner HUAZHONG UNIV OF SCI & TECH
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