Method for growing multilayer tungsten diselenide single crystal by molten salt assisted chemical vapor deposition

Abstract

The invention belongs to the field of two-dimensional materials, and discloses a method for growing a multilayer tungsten diselenide single crystal by molten salt-assisted chemical vapor deposition. The method uses a preset temperature condition in a small reaction chamber at a preset temperature Under high temperature conditions, the halide can melt and react with the tungsten source material to form an intermediate product with a melting point lower than that of the tungsten source material, and the carrier gas flow can carry the gaseous selenium element produced by the selenium source material and the gaseous tungsten element produced by the intermediate product on the substrate. The multilayer tungsten diselenide single crystal is grown based on the principle of chemical vapor deposition. The present invention improves the key reaction participants and reaction chamber of the preparation method, uses halides and tungsten source materials to participate in the reaction, and uses halide molten salts to react with tungsten source materials to generate intermediate products with a melting point lower than the tungsten source materials. The method can effectively control chemical vapor deposition to grow a multilayer tungsten diselenide single crystal, has good controllability and can produce a large-sized multilayer tungsten diselenide single crystal.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, more specifically, relates to a method for molten salt-assisted chemical vapor deposition growth (CVD) multilayer tungsten diselenide single crystal, especially a molten salt-assisted single-temperature zone chemical vapor deposition growth method Method for multilayer tungsten diselenide single crystal. Background technique [0002] Transition metal dichalcogenides (TMDC) are compounds with a two-dimensional structure, and transition metal dichalcogenides also have a two-dimensional structure. Taking molybdenum sulfide or tungsten sulfide as an example, molybdenum and tungsten atoms are arranged in a single layer, sandwiched by sulfur elements in the same layered structure. The interaction force between layers is van der Waals force, while the interior of molecules is a covalent bond formed by electrostatic interaction force. For most 2D materials, their preparation methods mainly fall...

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Problems solved by technology

For the growth and preparation of two-dimensional transition metal sulfides, the traditional chemical vapor deposition method still has a series of problems that need to be solved, such as insufficient quality, insufficient size, and insufficient performance: most of the grown tungsten diselenide films are It is a single layer and the size of the single layer is small; the controllable growth of double layers and multilayers cannot be realized; the development of miniaturization, light weight and simplification is limited for multi-temperature zones that require chemical vapor deposition equipment

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