MSe2 thin film material and preparation method and application thereof

A thin film material and thin film technology, applied in the field of MSe2 thin film material and its preparation, can solve the problems of poor binding force, low preparation efficiency, and many operation steps, and achieve the effects of low friction coefficient, short preparation time and simple process

Inactive Publication Date: 2019-09-03
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The defects and deficiencies of the above-mentioned technologies: (1) The base material is expensive, and the preparation process is easy to agglomerate, and the dispersion effect is poor; (2) MoSe 2 The bonding force with the base material is poor, and it is easy to peel off; (3) The process is complicated, there are many operation steps, it takes a long time, the preparation efficiency is low, and it is difficult to popularize and apply on a large scale

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  • MSe2 thin film material and preparation method and application thereof
  • MSe2 thin film material and preparation method and application thereof
  • MSe2 thin film material and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0035] The invention provides a kind of MSe 2 The preparation method of film material, comprises the following steps:

[0036] (1) Stainless steel substrate pretreatment: use 500-mesh, 1000-mesh and 2000-mesh sandpaper to polish in sequence, and perform polishing treatment. The stainless steel is ultrasonically cleaned with acetone and absolute ethanol for 900s to remove surface impurities;

[0037] (2) RF magnetron sputtering tungsten diselenide thin film: After placing the pretreated stainless steel substrate obtained in step (1) in the magnetron sputtering chamber, vacuumize the magnetron sputtering chamber to 5.0×10 -4 Below Pa, use argon as the working gas, tungsten diselenide target as the sputtering source, control the pressure of argon to 0.5Pa, and perform radio frequency magnetron sputtering to generate non-stoichiometric diselenide on the surface of the stainless steel substrate Tungsten film (WSe x ,0≤x≤2);

[0038] RF magnetron sputtering parameters: the distan...

Embodiment 2

[0041] The invention provides a kind of MSe 2 The preparation method of film material, comprises the following steps:

[0042] (1) Stainless steel substrate pretreatment: use 500-mesh, 1000-mesh and 2000-mesh sandpaper to polish in sequence, and perform polishing treatment, and ultrasonically clean the stainless steel with acetone and absolute ethanol for 1200s respectively to remove surface impurities;

[0043] (2) RF magnetron sputtering tungsten diselenide thin film: After placing the pretreated stainless steel substrate obtained in step (1) in the magnetron sputtering chamber, vacuumize the magnetron sputtering chamber to 9.0×10 -4 Below Pa, use argon as the working gas, tungsten diselenide target as the sputtering source, control the pressure of argon to 2.0Pa, and perform radio frequency magnetron sputtering to generate non-stoichiometric diselenide on the surface of the stainless steel substrate Tungsten film (WSe x ,0≤x≤2);

[0044]RF magnetron sputtering parameters...

Embodiment 3

[0047] The invention provides a kind of MSe 2 The preparation method of film material, comprises the following steps:

[0048] (1) Stainless steel substrate pretreatment: use 500-mesh, 1000-mesh and 2000-mesh sandpaper to polish in sequence, and perform polishing treatment. The stainless steel is ultrasonically cleaned with acetone and absolute ethanol for 1500s to remove surface impurities;

[0049] (2) RF magnetron sputtering tungsten diselenide thin film: After placing the pretreated stainless steel substrate obtained in step (1) in the magnetron sputtering chamber, vacuumize the magnetron sputtering chamber to 3.0×10 -3 Below Pa, use argon as the working gas, tungsten diselenide target as the sputtering source, control the pressure of argon to 5.0Pa, and perform radio frequency magnetron sputtering to generate non-stoichiometric diselenide on the surface of the stainless steel substrate Tungsten film (WSe x ,0≤x≤2);

[0050] RF magnetron sputtering parameters: the dista...

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Abstract

The invention discloses an MSe2 thin film material, a preparation method and application thereof, and belongs to the technical field of thin film material preparation. The MSe2 thin film material comprises a base, and an MSe2 thin film loaded on the base, wherein the MSe2 thin film comprises at least one of a tungsten diselenide thin film and a molybdenum diselenide thin film. According to the MSe2 thin film material provided by the invention, the tungsten diselenide thin film and/or the molybdenum diselenide thin film horizontally grows on the surface of stainless steel in a layered structure, and each layer of thin films are closely packed in a close-packed hexagonal structure to form a monomolecular layer with good stability; each layer of single molecules are combined mutually into a layered semiconductor material by depending on van der waals force; the sliding between the layered semiconductor materials is easy; and the MSe2 thin film material has relatively low friction coefficient in the friction material application.

Description

technical field [0001] The invention belongs to the technical field of thin film material preparation, in particular to a MSe 2 Thin film materials and their preparation methods and applications. Background technique [0002] Metal Selenide (MSe 2 ) has been a research hotspot in the field of photovoltaics, thermal insulation materials, and friction materials due to their self-lubricating properties. They have a layered crystal structure, which is conducive to the relative movement between layers. Compared with metal sulfides, the average coefficient of friction is lower. , is also not sensitive to moisture in the environment. Hui Yang disclosed that a PAN nanofibrous membrane was prepared by electrospinning technology, and CNFs were obtained after carbonization, and MoSe was deposited by chemical vapor deposition (CVD). 2 Loaded onto the CNFs substrate to prepare MoSe 2 / CNFs composites (Chem. Lett, 2016, 45:69-71). Shun Mao disclosed a special MoSe in (Small,2015,11(4...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58
CPCC23C14/0623C23C14/35C23C14/5806C23C14/5866
Inventor 邹俭鹏冒旭
Owner CENT SOUTH UNIV
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