Preparation method of molybdenum disulfide/tungsten diselenide vertical heterojunction

A technology of molybdenum disulfide and tungsten diselenide, applied in the directions of molybdenum sulfide, binary selenium/tellurium compound, metal selenide/telluride, etc., can solve the problems of uncontrollable epitaxial growth direction, alloying, thermal decomposition, etc. Achieve the effect of convenient scientific research application, reduce time period and reduce difficulty

Active Publication Date: 2019-11-05
HUNAN UNIV
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[0003] The purpose of the present invention is to provide a preparation method of molybdenum disulfide/tungsten diselenide vertical heterojunction at low temperature, which solves the problems of uncontrol...

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  • Preparation method of molybdenum disulfide/tungsten diselenide vertical heterojunction
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  • Preparation method of molybdenum disulfide/tungsten diselenide vertical heterojunction

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[0025] Hereinafter, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0026] figure 1 It shows a schematic diagram of an apparatus for preparing a molybdenum disulfide / tungsten diselenide vertical heterojunction according to an embodiment of the present invention. The structure is a single temperature zone horizontal tube furnace equipped with a quartz tube 3. Such as figure 1 As shown, the low temperature zone is close to the airflow direction, and the middle part is the heati...

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Abstract

The invention relates to a preparation method of a molybdenum disulfide/tungsten diselenide vertical heterojunction. The method comprises the steps: firstly preparing a molybdenum disulfide thin layeron a silicon dioxide/silicon substrate by a chemical vapor deposition method and then depositing a tungsten diselenide thin layer on the substrate by the chemical vapor deposition method and realizing the vertical heterojunction formed by the two materials at the growth temperature of 600-700 DEG C under the assistance of NaI. The preparation method of the molybdenum disulfide/tungsten diselenidevertical heterojunction material is simple in process, the addition of low melting point salts to the raw materials with combination of the mature basic process can avoid atomic substitution, thermaldecomposition, alloying and other unfavorable factors of the underlying transition metal disulfides (TMDCs) and realize the growth of the high-quality atomic steep-interface two-dimensional heterojunction. The present invention provides a new growth mechanism that enables a more in-depth understanding of the growth process of the TMDCs vertical heterojunction in terms of nucleation and dynamics so as to define a multifunctional material platform for basic research and potential device application.

Description

Technical field [0001] The invention relates to the field of preparation of two-dimensional material heterojunctions, in particular to a method for preparing molybdenum disulfide / tungsten diselenide vertical heterojunctions at low temperature. Background technique [0002] With molybdenum disulfide (MoS 2 ), tungsten diselenide (WSe 2 ) And other two-dimensional material controllable synthesis technology, its excellent performance has attracted the attention of many scientific researchers. A single type of two-dimensional material exhibits some unique physical properties. For example, a single-layer molybdenum disulfide is a semiconductor material with a direct band gap. It has a band gap energy in the visible light band and excellent quantum luminous efficiency, which broadens its use in new types of electronics. And the application in optoelectronic devices; however, a single material also has its own limitations. The band gap energy is single, the light absorption efficiency i...

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Application Information

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IPC IPC(8): H01L21/02C01G39/06C01B19/04
CPCC01B19/007C01G39/06C01P2002/80C01P2002/82C01P2004/02C01P2004/04C01P2004/80H01L21/02568H01L21/0262
Inventor 李梓维李方杨文梁德琅潘安练
Owner HUNAN UNIV
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