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Metal structure tungsten diselenide/redox graphene composite structure and preparation method thereof

A graphene composite and tungsten diselenide technology, applied in the direction of metal selenide/telluride, binary selenium/tellurium compound, graphene, etc., to achieve the effect of low energy consumption, high efficiency and excellent performance

Active Publication Date: 2019-09-17
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, flake 1T-WS 2 The formation of α depends on the synthesis temperature, and the currently applied chemical vapor deposition and high-temperature hydrothermal methods always lead to the formation of 2H structures

Method used

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  • Metal structure tungsten diselenide/redox graphene composite structure and preparation method thereof
  • Metal structure tungsten diselenide/redox graphene composite structure and preparation method thereof
  • Metal structure tungsten diselenide/redox graphene composite structure and preparation method thereof

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Embodiment 1

[0037] The present invention has a single-layer metal structure tungsten diselenide / redox graphene composite structure and WSe 2 , are prepared by the preparation method of the present invention, and performance comparison is carried out, the specific operations and results are as follows.

[0038]Raw material: ammonium tungstate [(NH 4 ) 10 (H 2 W 12 o 42 )·4H 2 O)], selenium powder, citric acid (C 6 h 8 o 7 ), Potassium borohydride (KBH 4 ) and 1 g / L monolayer graphene oxide (GO) aqueous solution.

[0039] 1. WSe 2 Preparation of the precursor aqueous solution of the thin film: Ammonium paratungstate [(NH 4 ) 10 (H 2 W 12 o 42 )·4H 2 O)] was dissolved in 10ml of water, and 0.42g of 0.002mol of citric acid was added to the solution at the same time. 0.3158g is 0.004mol of selenium powder and 0.324g is 0.006mol. Potassium borohydride (KBH 4 ) was reacted in 5 mL of deionized water for 30 min, and then 5 mL of deionized water was added. W and selenium ions (S...

Embodiment 2

[0054] The preparation method of the metal structure tungsten diselenide / redox graphene composite structure of the present invention comprises the following steps,

[0055] Step 1, preparation of synthetic WSe 2 Precursor aqueous solution; on the basis of ensuring that the concentration ratio of W and Se ions is 1:2, and the concentration of W ions is 0.10mol / L, and the concentration of Se ions is 0.20mol / L;

[0056] Step 2, in the synthesis of WSe 2 A single layer graphene oxide aqueous solution is added to the precursor aqueous solution to obtain WSe 2 / RGO precursor aqueous solution; wherein, RGO and WSe 2 The mass ratio of is 0.025;

[0057] Step 3, WSe 2 / After the aqueous solution of RGO precursor was hydrothermally treated at 170 °C for 24 h, the intercalated WSe 2 On the polyethylene naphthol substrate in the aqueous solution of the RGO precursor, a metal structure tungsten diselenide / RGO composite structure film is obtained;

[0058] Step 4: After the hydrother...

Embodiment 3

[0061] The preparation method of the metal structure tungsten diselenide / RGO composite structure of the present invention comprises the following steps,

[0062] Step 1, preparation of synthetic WSe 2 Precursor aqueous solution; on the basis of ensuring that the concentration ratio of W and Se ions is 1:2, the concentration of W ions is 0.25mol / L, and the concentration of Se ions is 0.5mol / L;

[0063] Step 2, in the synthesis of WSe 2 A single layer graphene oxide aqueous solution is added to the precursor aqueous solution to obtain WSe 2 / RGO precursor aqueous solution; wherein, RGO and WSe 2 The mass ratio of is 0.035;

[0064] Step 3, WSe 2 / After the aqueous solution of RGO precursor was hydrothermally treated at 175 °C for 24 h, the intercalated WSe 2 On the polyethylene naphthol substrate in the aqueous solution of the RGO precursor, a metal structure tungsten diselenide / RGO composite structure film is obtained;

[0065] Step 4: After the hydrothermal treatment, t...

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Abstract

The invention relates to a metal structure tungsten diselenide / redox graphene composite structure and a preparation method thereof. Firstly, a precursor aqueous solution of a WSE2 film is prepared; a monolayer graphene oxide aqueous solution and citric acid are added into the precursor aqueous solution of the WSE2 film to obtain a WSe2 / RGO precursor aqueous solution; then, after hydrothermal treatment at 165-180 DEG C, a thin-film metal structure tungsten diselenide / redox graphene composite structure is obtained on a polyethylene naphthol substrate inserted into the WSe2 / RGO precursor aqueous solution, and a precipitate in a residual solution after the hydrothermal treatment is filtered, washed and dried to obtain a powder metal structure tungsten diselenide / redox graphene composite structure. According to the invention, the preparation of metal structure tungsten diselenide can be realized through a one-step synthesis process through a hydrothermal method, and the preparation method is not only simple in process, but also has the excellent characteristics of low cost of used raw materials and equipment, low energy consumption, high efficiency and the like.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a metal structure tungsten diselenide / redox graphene composite structure and a preparation method thereof. Background technique [0002] Light detection technology has a wide range of important applications in the fields of optoelectronic communication, ambient light and sunlight sensing. WS 2 Thin films have excellent optoelectronic properties and are ideal photodetector materials. [0003] WS 2 Generally, there are two structures of semiconductor (2H) and metal (1T). Metal Structured 1T-WSe 2 Due to its excellent photoelectric properties, especially high conductivity and narrow optical band gap, it should have better photodetection performance than the 2H structure. . However, the natural bulk WSe 2 Generally semiconductor 2H structure, 1T-WSe 2 Occurs only in monolayer WSe 2 in the crystal. WSe synthesized by commonly used chemical vapor phase and simple hydrothermal me...

Claims

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Application Information

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IPC IPC(8): C01B32/184C01B19/04B82Y30/00G01J1/02C08J7/06C08L25/18
CPCB82Y30/00C01B19/007C01P2004/80C08J7/06C08J2325/18C01B32/184G01J1/02
Inventor 贺海燕贺祯沈清
Owner SHAANXI UNIV OF SCI & TECH
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