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Molybdenum disulfide-based visible near-infrared InGaAs detector and fabrication method thereof

A molybdenum disulfide and near-infrared technology, applied in the field of detectors, can solve the problems of complex detection system, inability to identify lasers, large system size and weight, etc., and achieve the effects of low preparation cost, improved light response, and simple preparation process

Inactive Publication Date: 2018-11-16
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The cut-off wavelength of the InGaAs absorbing layer material is in the near-infrared band, which means that the absorption spectrum of the InGaAs material can cover visible light with a wavelength smaller than the near-infrared, but due to the absorption of the InP substrate and the InP cap layer, the detection of InP / InGaAs / InP is inhibited. The detector detects the visible light band, so that the traditional InGaAs detector cannot detect the target of the visible light band, and cannot identify some widely used lasers with shorter wavelengths.
In addition, for some applications that need to detect visible light and short-wave infrared at the same time, multiple separate detectors are required to detect separately, resulting in the disadvantages of complex detection system, large system size and weight.

Method used

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  • Molybdenum disulfide-based visible near-infrared InGaAs detector and fabrication method thereof
  • Molybdenum disulfide-based visible near-infrared InGaAs detector and fabrication method thereof

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Experimental program
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Effect test

Embodiment 1

[0028] Embodiment 1, concrete technological process is:

[0029] 1. Sampling and cleaning, using acetone, ethanol and deionized water to clean the sample ultrasonically for 8-3 mins;

[0030] 2. Deposit SiO 2 Dielectric layer 4, SiO with a thickness of 90 nm deposited by plasma enhanced chemical vapor deposition (PECVD) 2 For the dielectric layer, the substrate temperature is 330±20 ℃, and the RF power is 40±10 W;

[0031] 3. Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2 A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500 W, RF power is 25-50 W, cavity pressure is 9.4 mTorr, and temperature is 5 °C;

[0032] 4. Transfer molybdenum disulfide 5, using dry transfer technology, transfer the molybdenum disulfide with a layer number of one layer to the square hole, covering the entire square hole, and the molybdenum disulfide 5 is in contact with the InGaAs absorption layer 3; ...

Embodiment 2

[0035] Embodiment 2, concrete technological process is:

[0036] 1. Sampling and cleaning, using acetone, ethanol and deionized water to clean the sample ultrasonically for 8-3 mins;

[0037] 2. Deposit SiO 2 Dielectric layer 4, SiO with a thickness of 300 nm deposited by plasma enhanced chemical vapor deposition (PECVD) 2 For the dielectric layer, the substrate temperature is 330±20 ℃, and the RF power is 40±10 W;

[0038] 3. Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2 A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500 W, RF power is 25-50 W, cavity pressure is 9.4 mTorr, and temperature is 5 °C;

[0039] 4. Transfer molybdenum disulfide 5, using dry transfer technology to transfer molybdenum disulfide with 3 layers onto the square hole to cover the entire square hole, and the molybdenum disulfide 5 is in contact with the InGaAs absorption layer 3;

[0040] 5. Etching...

Embodiment 3

[0042] Embodiment 3, concrete technological process is:

[0043] 1. Sampling and cleaning, using acetone, ethanol and deionized water to clean the sample ultrasonically for 8-3 mins;

[0044] 2. Deposit SiO 2 Dielectric layer 4, SiO with a thickness of 300 nm deposited by plasma enhanced chemical vapor deposition (PECVD) 2For the dielectric layer, the substrate temperature is 330±20 ℃, and the RF power is 40±10 W;

[0045] 3. Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2 A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500 W, RF power is 25-50 W, cavity pressure is 9.4 mTorr, and temperature is 5 °C;

[0046] 4. Transfer molybdenum disulfide 5, using dry transfer technology, transfer five layers of molybdenum disulfide to the square hole, covering the entire square hole, and the molybdenum disulfide 5 is in contact with the InGaAs absorption layer 3;

[0047] 5. Etching th...

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Abstract

The invention belongs to the technical field of detectors, and particularly relates to a molybdenum disulfide-based visible near-infrared InGaAs detector and a fabrication method thereof. The detectorstructure comprises a substrate material, wherein indium phosphide is used as the substrate material, an InP contact layer, an InGaAs absorption layer and a silicon oxide dielectric layer are sequentially grown on the substrate, a square hole is formed in the center of the silicon oxide dielectric layer, a molybdenum disulfide layer is transferred onto the silicon oxide dielectric layer, the square hole of the silicon oxide dielectric layer is filled with the molybdenum disulfide layer, Schottky contact is formed between the molybdenum disulfide layer and the InGaAs absorption layer, an uppermetal electrode is grown on a contact region of the molybdenum disulfide layer and the silicon oxide dielectric layer, and a lower metal electrode is grown on one side of the InP contact layer. By the InGaAs detector, wide spectrum detection within a range from near infrared light to visible light can be achieved.

Description

technical field [0001] The invention belongs to the technical field of detectors, and in particular relates to a molybdenum disulfide-based visible-near-infrared InGaAs detector and a preparation method thereof. The detector can realize wide-band detection including visible light and near-infrared light. Background technique [0002] The traditional structure of InGaAs detector is InP / InGaAs / InP structure, which has good performance in the near-infrared band, which makes it widely used in civil, military and aerospace fields. The cut-off wavelength of the InGaAs absorbing layer material is in the near-infrared band, which means that the absorption spectrum of the InGaAs material can cover visible light with a wavelength smaller than the near-infrared, but due to the absorption of the InP substrate and the InP cap layer, the detection of InP / InGaAs / InP is inhibited. Due to the detection of the visible light band by the detector, the traditional InGaAs detector cannot detect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/032H01L31/18
CPCH01L31/032H01L31/108H01L31/1844Y02P70/50
Inventor 丛春晓曹高奇仇志军单亚兵汤乃云王倩倩
Owner FUDAN UNIV
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