159results about How to "Spectral width" patented technology

The invention discloses a distributed optical fiber sensing device based on a chaotic laser coherence method, and a measurement method of the distributed optical fiber sensing device. Chaotic laser light which is emitted from a chaotic laser is divided into detection light and reference light; the detection light is amplified by a light amplifier and then emitted into a sending optical fiber through an optical circulator, and a backward Brillouin scattering light signal is generated in the optical fiber; the Brillouin scattering light signal is amplified by the light amplifier, de-noised by a tunable light filter and then emitted into an optical fiber coupler; the optical length of the reference light is regulated by a variable light delay line, and interferes with the backward Brillouin scattering light signal which is generated by the detection light at different positions in the sensing optical fiber in the optical fiber coupler; an interference beat frequency signal is detected by a photoelectrical detector; and Brillouin gain spectra at different lengths are obtained through a data acquisition device and a signal processing device and then output to a display device, so strain or temperature sensing detection is realized.

Narrow pulses transmitted wirelessly from a transmitting antenna to a receiving antenna are used to measure the electrical permittivity of the medium of interest between the two antennas. Timing signals are transmitted along a shielded transmission line coincident with the wireless transmission through the medium. The received waveform is digitized in the time domain and analyzed to determine the propagation time. The effects of dispersion caused by the conductive and dielectric properties of the medium on the transmitted waveform are overcome through analysis of the digitized waveform, resulting in an accurate measurement of the propagation time and thus the permittivity of the medium, from which volumetric moisture content may be derived.

The invention provides an antireflection and self-cleaning thin film and a preparation method thereof. According to the preparation method, a solid figure structure of a micron size is processed on a transparent flexible thin film through adopting imprinting technologies and surface modification technologies, so that the transparent flexible thin film has antireflection and self-cleaning performance; the antireflection and self-cleaning thin film is integrated on the window layer of a solar battery assembly, and as a result, the surface reflection of the window layer can be effectively inhibited, and the number of photons entering the absorption layer of a battery can be increased; and therefore, the photoelectric conversion efficiency of the battery can be improved, and especially, the efficiency of the battery can be improved more significantly when sunlight obliquely enters the battery. A super hydrophobic film or a super hydrophilic film can be selected as the antireflection and self-cleaning thin film of the invention; since the super hydrophobic film has a high water contact angle, when the super hydrophobic film tilts, water droplets are very easy to roll down and take away surface pollutants, and therefore, a self-cleaning effect can be realized; and based on the photocatalysis, the super hydrophilic film can degrade surface organic contaminations, and therefore, a self-cleaning effect can be also realized.

The invention relates to a metal dielectric film reflection polarization beam splitting grating for a waveband of 1,053 nanometers, which is characterized in that the metal dielectric film reflection polarization beam splitting grating is formed in a mode that a silver layer, a high reflection film layer and a rectangular grating are plated on a quartz substrate sequentially; the rectangular grating has a period of 680.6 nanometers and a duty cycle of 0.2; a grating etching depth is in the range of 374 to 476 nanometers; the thickness of the silver layer is 100 nanometers; an intermediate layer of the high reflection film layer is a high refractive index layer; and inner and outer layers of the high reflection film layer are low refractive index layers. The metal dielectric film reflection polarization beam splitting grating disclosed by the invention has high extinction ratio and diffraction efficiency and wider bandwidth and angular width, can be used for a high-power laser system and has a good polarization beam splitting effect.

The invention discloses a super-luminescent diode and a method for manufacturing the same. The super-luminescent diode comprises a substrate. The method includes sequentially forming a buffer layer, a lower limiting layer, an active region, an upper limiting layer and a first p-type covering layer on the substrate so as to form a primary epitaxial slice by an epitaxial growth technology; sequentially growing a second p-type covering layer and an n-type covering layer on the surface of the primary epitaxial slice so as to form a secondary epitaxial slice by the epitaxial growth technology; growing a covering layer and a contact layer on the surface of the secondary epitaxial slice so as to form a tertiary epitaxial slice by the epitaxial growth technology; and manufacturing the tertiary epitaxial slice into a super-luminescent diode chip by photoetching, etching, slice grinding and sputtering processes sequentially, and coating an antireflection film on a light emergent end surface of the chip. The super-luminescent diode and the method have the advantages of low polarization sensitivity and ripple coefficient, high power, wide spectrum and the like.

The invention discloses a graphene two-dimensional material protective layer-based topological insulator array photoelectric detector and a preparation method and application thereof. The method comprises the following preparation process of (1) growing a topological insulator film which is opposite to a substrate in doping type on the substrate; (2) obtaining a graphene two-dimensional material protective layer / PMMA stack structure by adopting a wetting transfer method and transferring the graphene two-dimensional material protective layer / PMMA stack structure to the topological insulator film; (3) preparing an ITO array electrode through photoetching and magnetron sputtering; and (4) etching away the topological insulator film between array elements of the ITO array electrode and a graphene two-dimensional material through photoetching and reactive ion etching to obtain the photoelectric detector. According to the method, a topological insulator can be effectively prevented from being in direct contact with an organic liquid to be damaged, the method can be compatible with a traditional micro-nano technology, the dimension of the unit detector is shortened, the integration level is improved, a wide spectrum and an ultra-fast photoelectric response are obtained and the method has a wide application prospect.

The invention discloses an LED-excited short wavelength infrared fluorescent microscopic imaging system. In the system, laser light emitted by a single-color LED passes through a collimating lens to be collimated firstly and is introduced into a light path of a microscope vertical illumination device, the exciting light is reflected with a dichroic beam combiner and converges onto a back focal plane of a microscopic objective, converging light forms parallel exciting light beams after passing through the objective and illuminates onto a sample, and a fluorescence probe in the sample is excitedto emit fluorescence; and a fluorescence signal passes through the objective, penetrates through the dichroic beam combiner and is finally received by a detection surface of an InGaAs camera to realize photoelectric conversion, and the signal is transmitted to a computer for data processing to obtain an imaged picture or a video. The LED-excited short wavelength infrared fluorescent microscopic imaging system has the remarkable advantages of high signal-to-noise ratio, high magnification, high resolution, capability of real-time imaging, capability of tomography, large penetration depth, small tissue damage and the like.

The invention discloses a system and a method for generating TeraHertz waves by using a special laser beam. The system for generating the TeraHertz waves by using the special laser beam comprises a special beam generating device and a TeraHertz wave generating device, wherein the special beam generating device is used for generating the special beams; the TeraHertz wave generating device comprisesa lens and a BBO crystal which are parallel to each other, and the TeraHertz waves are generated after the special beam vertically transmits through the lens and the BBO crystal in sequence. Comparedwith Gauss beam, plasmas formed after lens focusing of the special beam in the invention can change correspondingly, so that the energy utilization rate is higher, and the generated TeraHertz waves are higher in energy. The system for generating the TeraHertz waves by using the special laser beam provided by the invention is simple in structure, easy to maintain and relatively high in stability,different types of special beams and different intensities of TeraHertz waves can be generated according to actual requirements, the blank in the technical field of high-intensity TeraHertz wave generation at present is filled, and the system has relatively high scientific research and practical application values.

A trapezoid metal dielectric film broadband pulse compressed grating is characterized in that the grating is integrally formed through a matching layer and a trapezoid grating ridge, wherein the matching layer is composed of a quartz substrate, a metal layer and two layers of dielectric films, the trapezoid grating ridge is composed of three layers of dielectric films, and the outermost layer is made of SiO2. The cycle of the trapezoid grating is 490-640 nanometers, the duty ratio is 0.2-0.7, the base angle of the grating ridge is 60-89 degrees, the middle layer of the grating ridge is a high-refractive-index layer, and the inner layer and the outer layer of the grating ridge are low-refractive-index layers made of SiO2; the outer layer of the matching layer is a high-refractive-index layer, and the inner layer of the matching layer is a low-refractive-index layer; the thickness of the metal layer is larger than 50 nanometers. The trapezoid metal dielectric film broadband pulse compressed grating can be used as a pulse compressed grating of a high-power ultra-short pulse laser system with the central wavelength of 800 nanometers.

The invention discloses a method for preparing a PbSe quantum dot doped fiber material. The fiber material is prepared from the following raw materials in percentage by mass: 45 to 75 percent of SiO2, 3 to 10 percent of B2O3, 3 to 10 percent of Al2O3, 5 to 20 percent of ZnO, 1 to 7 percent of AlF3, 10 to 25 percent of Na2O, 0.5 to 5 percent of PbO, 0.5 to 5 percent of Se, and 0.5 to 2 percent of C. The PbSe quantum dot doped fiber material is prepared by the following steps of: weighing the raw materials in mass percentage, putting the raw materials into a ball mill, fully mixing the raw materials uniformly, putting the mixture into a closed crucible, melting the mixture for 30 minutes to 2 hours at the high temperature of between 1,100 and 1,450 DEG C, then quickly cooling the melt to obtain light brown grass, and finally performing a thermal treatment process to obtain the brown black PbSe quantum dot doped fiber material. The PbSe quantum dot doped fiber material prepared by the method has the characteristics of simple process, low price, controllable quantum dot size and the like.

The invention provides a polarization interference imaging spectrum system and an imaging method thereof. The imaging spectrum system comprises a micro-lens array, a collimating mirror, a first polarization array, a Savart polariscope group, a second polarization array, an imaging lens, a CCD detector, and a signal processing system. A target light source is incident into the micro-lens array and passes through the collimating mirror to produce parallel light and then passes through the first polarization array to produce linearly polarized light; the linearly polarized light beam is divided into two beams of linearly polarized parallel light by the Savart polariscope group; the two beams of linearly polarized parallel light pass through the second polarization array to produce linearly polarized light with the same polarization direction; finally, the linearly polarized light passes through the imaging lens and aggregates on the CCD detector to produce an interference pattern; the interference pattern formed in the CCD detector is input into the signal processing system to be processed to obtain a spectrogram with polarization information. The system has simple and stable structure, and does not have any mechanical moving parts or electric tuning members; by use of the system and method, two-dimensional space information, one-dimensional spectrum information and four-dimensional polarization information of an object are obtained at the same time, and multiple interference sub-images under a same linear polarization state are obtained.

The invention discloses a preparation method of a water-soluble nitrogen-phosphorus-boron codoped carbon quantum dot. The preparation method comprises the following steps: step I, dissolving phenylphosphinic acid in ultra pure water to obtain a precursor solution I, dissolving 3-aminobenzene boronic acid in ultra pure water to obtain a precursor solution II, and uniformly mixing the precursor solution I with the precursor solution II in the volume ratio of the precursor solution I to the precursor solution II being (1-6) to 1 so as to obtain a mixed solution; step II, performing a hydrothermal reaction on the mixed solution prepared in the step I so as to obtain the water-soluble nitrogen-phosphorus-boron codoped carbon quantum dot. According to the preparation method disclosed by the invention, the water-soluble nitrogen-phosphorus-boron codoped carbon quantum dot is prepared by the one-step hydrothermal method, carbon sources are rich, a preparation process is simple and easy, the whole preparation process is pollution-free, non-toxic, green and environmentally-friendly, and the water-soluble nitrogen-phosphorus-boron codoped carbon quantum dot can be prepared in a large-scale manner.

The invention discloses a preparation method for high-density PbSe quantum dot silicate glass which is prepared from the following raw materials in percentage by weight: 45-70% of SiO2, 3-10% of B2O3, 3-10% of Al2O3, 5-20% of ZnO, 1-7% of AlF3, 10-25% of Na2O, 3-10% of PbO and 2-8% of ZnSe. The raw materials are weighed in percentage by weight; the raw materials are evenly mixed in a ball mill and then put in a sealed crucible; then, the mixture is molten at a high temperature of 1380-1600DEG C for 0.5-2 hours; a molten body is poured into a metal die and is quickly cooled in the air atmosphere to obtain yellow transparent glass; then, the yellow transparent glass is subjected to thermal treatment at the temperature of 500-650DEG C for 1-20 hours; the yellow transparent glass is taken out to be quickly cooled to the room temperature in the air to obtain black glass, namely the high-density PbSe quantum dot silicate glass. By utilizing the preparation method, the high-density PbSe quantum dot silicate glass can be obtained. The volume of the PbSe quantum dot in a glass matrix can be as high as 2-4% which is higher than a doping volume mass when Se is used as a selenium source.

The invention discloses a polarized selection reflection type grating based on a metal multilayer dielectric film used for a 1550 nanometer center wavelength. The grating comprises a quartz substrate,a metal layer, a matching layer and a grating etching layer which are successively plated from inside to outside. The grating etching layer comprises a first low refractive index film and a first high refractive index film which are successively plated from inside to outside. The matching layer comprises a second low refractive index film and a second high refractive index film which are successively plated from inside to outside. A period of the grating etching layer is 1200-1300 nanometers and a duty ratio is 0.2-0.4. The thickness of the first low refractive index film is 100-160 nanometers, the thickness of the first high refractive index film is 240-310 nanometers, the thickness of the second high refractive index film is 90-150 nanometers and the thickness of the second low refractive index film is 240-300 nanometers. The thickness of the metal layer is greater than 50 nanometers. The grating possesses characteristics of a wide spectrum, a wide angular spectrum, high diffractionefficiency and the like, and the grating shows completely different diffraction characteristics to different polarized incident light.

The invention relates to the semiconductor laser technology field and especially relates to a laser light source system and a display apparatus. A laser, a heat sink and a uniform light device are included. The laser comprises N laser chips and the N is an integer which is greater than or equal to 1. The N laser chips are arranged on the heat sink. In the heat sink, thermal conductivities of positions where at least two laser chips are located are different so that the laser chips at different positions possess a temperature difference and wavelengths of output light of the laser chips are changed. Laser beams emitted by the N laser chips are entered into the uniform light device. Through the uniform light device, the laser beams with different wavelength are superposed and finally laser beams which are uniformly distributed are acquired so that laser coherence is reduced and laser speckles are effectively restrained. The structure of the laser light source system is simple, cost is low and the system is easy to realize.

The invention relates to a broad spectrum optical imaging system of a large-diameter photon sieve space telescope. The broad spectrum optical imaging system comprises a large-diameter photon sieve. A negative diffraction lens, a positive lens, a first harmonic diffractive and a second harmonic diffractive of lens zero focal power, and a photoelectric detector are arranged in sequence after the photon sieve along the incident direction of light. The system has the advantages of large diameter, light equipment, broad spectrum and high resolution.

The invention provides a vegetable plantation method. An LED light source is used to irradiate leaves of vegetables, light emitted by the LED light source including blue light and red light, and the proportion of light energy of blue light to light energy of red light is 0.7-1.5:1. Under irradiation in the light energy proportion, leafy vegetables grows rapidly and vigorously, the production period can be shortened, and the output is increased. The invention also provides the LED light source, the LED light source comprises a glue light chip and mixing fluorescent powder fixed to the blue light chip, the mixing fluorescent powder comprises red fluorescent powder and green fluorescent powder in the weight ratio of 1:1-1.5, and the LED light source can be applied to vegetable plantation.

The invention relates to a distributed optical fiber sound sensing and positioning system, which performs optical fiber sound detection by means of a Mach-Zehnder interference and phase-sensitive optical time domain reflection mixed structure, combines an MZI interference type optical fiber sound sensing system and a phi-OTDR optical fiber vibration positioning system, and realizes restoration andpositioning of external sound signals simultaneously. Compared with an existing distributed optical fiber vibration measurement technology, the distributed optical fiber sound sensing and positioningsystem has the advantages of low cost, high reliability, high real-time monitoring capacity, long monitoring distance and high resolution, can realize restoration and positioning of vibration sound signals simultaneously, and has huge application potential in long-distance safety detection of natural gas, petroleum pipelines and the like. In addition, a chaotic light source used in an MZI opticalpath of the distributed optical fiber sound sensing and positioning system has the advantages of wide spectrum, more carried information, good autocorrelation and low autocorrelation noise, and can suppress scattering noise in the optical path and increase the signal-to-noise ratio, thereby improving the response sensitivity of the device.

A colorless light approaching that of white light in nature, is produced by using a blue color LEDs and a green color LED are covered with a red color phosphorescent glue and a yellow phosphorescent glue in separate layers or a mixed layer.

The invention belongs to the technical field of near-infrared light-emitting materials, particularly relates to a near-infrared light-emitting material, and further discloses a preparation method of the near-infrared light-emitting material and a light-emitting device containing the light-emitting material, wherein the near-infrared light-emitting material comprises an inorganic compound with a composition of MaAb(QO3)c:zZ, the excitation wavelength of the compound is 350-750nm, the emission main peak of the near-infrared region is broadband or multispectral emission at 700-1700 nm, the excitation wavelength is broad, and the compound can well absorb ultraviolet light, blue light and red light, has broadband or multispectral emission (700-1700 nm) in a near-infrared region, is adjustable and controllable in spectral range, has wide or more spectral line emission compared with red light with a peak wavelength of 700-1700 nm and near-infrared chips, and has wider application.

The invention discloses a wide-band-gap copolymer acceptor material based on perylene diimide and a preparation method thereof, belonging to the technical field of solar cell materials. The terpolymerorganic solar cell acceptor material based on perylene diimide, porphyrin and thiophene is a random copolymer organic solar cell acceptor material having a D-A structure, and has a general structuralformula as shown in a formula I which is described in the specification. The random copolymer organic solar cell acceptor material having the D-A structure can further be as shown in a formula II anda formula III. The wide-band-gap copolymer acceptor material based on perylene diimide provided by the invention has the advantages of simple molecular structure, a few and simple preparation steps,usage of cheap and easily-available raw materials for synthesis, and good visible light absorption range and a absorption strength. Perylene diimide copolymer molecules in the invention can be processed by using a solution method and have good solar light capturing ability and thermal stability, so the material is an ideal material for an all-polymer organic solar cell.

The invention discloses a preparation method of water-soluble nitrogen-doped carbon quantum dots, comprising the following steps: Step 1, dissolving citric acid in ultrapure water to prepare precursor solution I, dissolving p-aminobenzamide in Prepare precursor solution II in pure water, uniformly mix precursor solution I and precursor solution II at a volume ratio of 1 to 10:1 to obtain a mixed solution; step 2, perform hydrothermal reaction on the mixed solution prepared in step 1, Water-soluble nitrogen-doped carbon quantum dots can be obtained. The invention adopts a one-step hydrothermal method to prepare water-soluble nitrogen-doped carbon quantum dots. The carbon source is rich and cheap, the preparation process is simple, the whole preparation process is pollution-free, non-toxic, green and environmentally friendly, and can be prepared in large quantities.

An LED synchronous red-blue light panel light source used for promoting plant growth is composed of a high reflection panel, blue light LED light bars, a rare earth luminous panel, a light guiding board and an aluminum frame. The aluminum frame is a rectangular, the blue light LED light bars and the middle of the inner side face of the aluminum frame are fixed, the four side faces of the cuboid light guiding board, are connected with the blue light LED light bars around the cuboid light guiding board respectively, and the high reflection panel and the rare earth luminous panel adhere to the upper face and the lower face of the aluminum frame in a sealing mode. The LED synchronous red-blue light panel light source has the advantages that the structure is simple, implementation is easy, LED conversion is achieved from a traditional point light source to an area light source, the spectrum is wide, brightness is high, light colors are even, the capacity of damp and hot resistance is high, and service life is long; the full width at half maximum of an emitted red light peak is approximate to 70nm and is closer to red light in natural light, the irradiance proportion of red light and blue light is adjustable, coverage can be effectively performed on the absorption spectra of plants so that requirements of plant growth can be met, and the LED synchronous red-blue light panel light source can be widely applied to an intelligent plant factory and the fields of perpendicular planting, tissue culture seedling growth, home gardening and others.

The invention discloses a quantum-dot wide-spectrum single-photon detector and a detection method thereof. A singe photon from visible light to an infrared band is input to an active region of a device, a quantum dot layer absorbs the photon and then generates an exciton, the exciton is separated under the effect of a heterojunction abrupt change electric field of the quantum dot layer and a porous silicon layer, an electron hole pair is formed, and carriers move towards an electrode under the effect of the electric field. Under a reversed bias voltage in a Geiger mode, a PN node composed of a heavily-doped N+ type layer and a heavily-doped P+ type layer forms a long depletion region, carriers collide with each other in an accelerated way under the effect of a high electric field, the gain is amplified, and a detectable current is formed. The detector and the detection method thereof have the advantages that the detection efficiency is high, the temperature is kept at room temperature, the spectrum is wide, the detector and method are compatible with a CMOS technology of an integrated circuit, quenching control and a playback circuit are integrated in a single chip, and the application prospect in the market of few-photon and single-photon detectors is wide.

The invention discloses a large-visual-field high-resolution optical system. The large-visual-field high-resolution optical system comprises an imaging lens array, an image sensor array, a signal processing unit, a projection objective and a division lens array. The projection objective is positioned between an object plane and a first image plane. Units in the three arrays are in one-to-one correspondence mapping relation. The division lens array is positioned close to the first image plane. The imaging lens array and the image sensor array are positioned on one side, away from the object plane P1, of the first image plane. The division lens array is positioned between the object plane and the first image plane and close to the first image plane. The imaging lens array is positioned between the first image plane and the image sensor array. The first image plane is divided into visual field arrays by the division lens array, the object plane is imaged to a light sensing face of the image sensor array by the imaging lens array, and the image sensor array collects an image information array. The signal processing unit processes the image information array in an image processing mode to acquire large-visual-field high-resolution computational images.

The invention discloses a panchromatic Micro-LED array display and white light device based on III-nitride / organic semiconductor hybrid structure, which mixes inorganic and organic light emitting diode devices to obtain high-efficiency ultra-high-resolution active Micro-LED display and lighting source. A red-light, green-light or yellow-light organic material is evaporated on an N-type gallium nitride layer of a InxGa1-xN / gallium nitride quantum well blue-light LED epitaxial wafer having a p-n structure, respectively, and an electron transport layer, a luminescent layer, an exciton blocking layer, a hole transport layer and a hole injection layer are included in sequence; and when one of the groups of materials is evaporated, other pixels are shielded using a shielding mask. The technologycombines the organic semiconductor material and inorganic semiconductor material, and can realize a novel inorganic / organic semiconductor hybrid structure Micro-LED device array which has the characteristics of high efficiency, wide color gamut, low power consumption and fast response time.

The invention discloses a 360-degree complete cycle type LED lamp filament based on purple light chips. The 360-degree complete cycle type LED lamp filament based on the purple light chips is composed of a substrate, the chips, transparent silica gel, inorganic nanoparticles and phosphor gel; the phosphor gel is formed by organic silicon resin, multicolor phosphor and coupling agents through an injection moulding process, and is arranged on the outer side of the transparent silica gel. The chips are the purple light chips, the emission wavelength range is 360-410 nm, the chips are fixed to one face or the obverse side and the reverse side of the substrate, the inorganic nanoparticles are TiO2 or ZrO2, the particle size is 10-100 nm, the inorganic nanoparticles are distributed in the transparent silica gel, the multicolor phosphor is red, green and blue mixed phosphor of a phosphate or silicate system, and the coupling agents are silane coupling agents. The 360-degree complete cycle type LED lamp filament based on the purple light chips has the advantages of being high in color reduction degree, even and soft in light color, capable of emitting light by 360 degrees, high in light emitting efficiency, and the like.

A high energy femtosecond laser pulse outer cavity compression arrangement includes one laser amplifier system, thin lens, pulse compression unit, silvering concave mirror, silvering plane reflection mirror, dispersion compensating element, first broadband beam splitting piece, second broadband beam splitting piece, spectrograph, and pulse measurement instrument. It features said pulse compression unit consisting of solid material and vacuum tube, said solid material being used as vacuum tube back light piece and integrated forming, said vacuum tube side wall having inflation port. Said invented device can avoid damage to filter in high-energy pulse incidence state, suitable for large range energy femtosecond laser pulse compression, different wave band incident pulse, and linear polarization and circular polarization incident pulse.

The invention provides an indoor wide-spectrum wide-visual-angle condensation photovoltaic solar cell testing device which has the main function of testing III-V family condensation solar cells under different condensation multiples. The indoor wide-spectrum wide-visual-angle condensation photovoltaic solar cell testing device comprises an optical table, a simulated light source, a cell fixture and a testing system, wherein the simulated light source positioned on the optical table emits light rays; and the testing system measures the photovoltaic characteristic curve of the solar cell to be measured. The invention is characterized by also comprising a condensation system, wherein the condensation system comprises a condensation lens, a field lens and a collimating mirror which are sequentially arranged in an optical path; and the condensation system is used for condensing the light rays onto the solar cell to be measured. The invention has the advantages of stable simulated sunlight, adjustable light source intensity, wide spectrum, wide visual angle and many condensation multiples.