Preparation method for high-density PbSe quantum dot silicate glass

A technology of silicate glass and quantum dots, which is applied in the fields of optical communication technology and nanomaterial preparation, can solve the problems of easy volatilization of elemental Se components, and achieve the effects of low price, increased content, and avoidance of high temperature volatilization.

Inactive Publication Date: 2012-09-19
程潇羽
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem that the elemental Se component is volatile at high temperature, the present invention provides a method for preparing PbSe quantum d

Method used

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  • Preparation method for high-density PbSe quantum dot silicate glass
  • Preparation method for high-density PbSe quantum dot silicate glass
  • Preparation method for high-density PbSe quantum dot silicate glass

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[0026] Example 1:

[0027] SiO is selected for glass matrix formulation 2 , B 2 O 3 , Al 2 O 3 , ZnO, AlF 3 And NaO 2 , PbO and ZnSe are selected as the precursors of PbSe quantum dots, and the mass fraction ratio is: SiO 2 : B 2 O 3 : Al 2 O 3 :ZnO:AlF 3 : NaO 2 :PbO:ZnSe=56.50%:4.33%:3.85%:8.57%:2.12%:15.11%:5.78%:3.74%. Weigh the raw material SiO 2 : 56.50g; B 2 O 3 : 4.33g; Al 2 O 3 : 3.85g; ZnO: 8.57g; AlF 3 :2.12g; NaO 2 :15.11g; PbO: 5.78g; ZnSe: 3.74g, put the above chemical raw materials in a ball mill and stir them evenly, take them out and put them in a sealed corundum crucible, then put them in a box-type electric furnace, melt at 1400℃ for 1h, then Pour the melt on a metal mold and quickly cool to room temperature to obtain yellow glass.

[0028] Then put the glass in a box-type electric furnace, heat treatment at 530℃ for 5h, take it out and cool it to room temperature rapidly in the air, and obtain a pure black PbSe quantum dot silicate glass sample (denoted as G 1 )...

Example Embodiment

[0029] Example 2:

[0030] SiO is selected for glass matrix formulation 2 , B 2 O 3 , Al 2 O 3 , ZnO, AlF 3 And NaO 2 , PbO and ZnSe are selected as the precursors of PbSe quantum dots, and the mass fraction ratio is: SiO 2 : B 2 O 3 : Al 2 O 3 :ZnO:AlF 3 : NaO 2 :PbO:ZnSe=56.50%:4.33%:3.85%:8.57%:2.12%:15.11%:5.78%:3.74%. Weigh the raw material SiO 2 : 56.50g; B 2 O 3 : 4.33g; Al 2 O 3 : 3.85g; ZnO: 8.57g; AlF 3 :2.12g; NaO 2 :15.11g; PbO: 5.78g; ZnSe: 3.74g, put the above chemical raw materials in a ball mill and stir them evenly, take them out and put them in a sealed corundum crucible, then put them in a box-type electric furnace, melt at 1400℃ for 1h, then Pour the melt on a metal mold and quickly cool to room temperature to obtain yellow glass.

[0031] Then put the glass in a box-type electric furnace, heat treatment at 550℃ for 5h, take it out and cool it to room temperature quickly, and obtain a pure black PbSe quantum dot silicate glass sample (denoted as G 2 ). From XRD...

Example Embodiment

[0032] Example 3:

[0033] SiO is selected for glass matrix formulation 2 , B 2 O 3 , Al 2 O 3 , ZnO, AlF 3 And NaO 2 , PbO and ZnSe are selected as the precursors of PbSe quantum dots, and the mass fraction ratio is: SiO 2 : B 2 O 3 : Al 2 O 3 :ZnO:AlF 3 : NaO 2 :PbO:ZnSe=56.50%:4.33%:3.85%:8.57%:2.12%:15.11%:5.78%:3.74%. Weigh the raw material SiO 2 : 56.50g; B 2 O 3 : 4.33g; Al 2 O 3 : 3.85g; ZnO: 8.57g; AlF 3 :2.12g; NaO 2 :15.11g; PbO: 5.78g; ZnSe: 3.74g, put the above chemical raw materials in a ball mill and stir them evenly, take them out and put them in a sealed corundum crucible, then put them in a box-type electric furnace, melt at 1400℃ for 1h, then Pour the melt on a metal mold and quickly cool to room temperature to obtain yellow glass.

[0034] Then put the glass in a box-type electric furnace, heat treatment at 600℃ for 5h, take it out and cool it to room temperature rapidly in the air, and obtain a pure black PbSe quantum dot silicate glass sample (denoted as G 3 )...

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Abstract

The invention discloses a preparation method for high-density PbSe quantum dot silicate glass which is prepared from the following raw materials in percentage by weight: 45-70% of SiO2, 3-10% of B2O3, 3-10% of Al2O3, 5-20% of ZnO, 1-7% of AlF3, 10-25% of Na2O, 3-10% of PbO and 2-8% of ZnSe. The raw materials are weighed in percentage by weight; the raw materials are evenly mixed in a ball mill and then put in a sealed crucible; then, the mixture is molten at a high temperature of 1380-1600DEG C for 0.5-2 hours; a molten body is poured into a metal die and is quickly cooled in the air atmosphere to obtain yellow transparent glass; then, the yellow transparent glass is subjected to thermal treatment at the temperature of 500-650DEG C for 1-20 hours; the yellow transparent glass is taken out to be quickly cooled to the room temperature in the air to obtain black glass, namely the high-density PbSe quantum dot silicate glass. By utilizing the preparation method, the high-density PbSe quantum dot silicate glass can be obtained. The volume of the PbSe quantum dot in a glass matrix can be as high as 2-4% which is higher than a doping volume mass when Se is used as a selenium source.

Description

(1) Technical field [0001] The invention relates to the fields of optical communication technology and nanometer material preparation, in particular to a method for preparing silicate glass containing PbSe quantum dots at a higher concentration. (2) Background technology [0002] Semiconductor quantum dots and their optical properties are research hotspots. Among the many types of quantum dots, group IV-VI semiconductor quantum dots (such as PbSe, PbS) have received great attention due to their strong optical absorption and fluorescence emission properties. Studies have shown that compared with fiber optic devices doped with natural rare earth elements (such as erbium, thulium, etc.), fiber amplifiers composed of PbSe quantum dots have the advantages of wide bandwidth and flat gain; PbSe quantum dot fiber lasers have high pumping efficiency and saturation The characteristics of low concentration and short fiber saturation length show the broad application prospects of PbSe ...

Claims

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Application Information

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IPC IPC(8): C03C4/12C03C3/118
Inventor 程潇羽程成
Owner 程潇羽
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