This invention relates to a method for fabricating horizontal
heterojunction photodetector matrices based on single-
crystal nanoribbons, belonging to the field of
nanomaterials and optoelectronic devices. A two-step
chemical vapor deposition process is employed: first, a first type of single-
crystal nanoribbon array is directionally grown on a single-
crystal substrate with a stepped surface; then, using this as a template, a second material is epitaxially grown along the lateral edges of the nanoribbons, directly forming a large-area, oriented, continuous single-crystal horizontal
heterojunction nanoribbon array. This avoids material damage at the
heterojunction interface caused by traditional patterning processes, achieving high-quality, high-uniformity, and controllable interface fabrication. The nanoribbon array is then segmented into a high-density discrete PN junction matrix using micro /
nano fabrication techniques, and electrodes are fabricated to construct the
photodetector matrix. This achieves controllable growth of a high-quality single-crystal heterojunction array and efficient integration of the optoelectronic device matrix. The resulting device exhibits advantages such as high
pixel density, no
crosstalk between units, low
dark current, and fast response, providing a feasible solution for ultra-
high resolution optoelectronic
integrated systems.