Quantum-dot wide-spectrum single-photon detector and detection method thereof

A single-photon detector and quantum dot technology, which is applied in the field of weak light signal detection, can solve problems that are not suitable for infrared photon detection, achieve high detection efficiency and broad application prospects

Pending Publication Date: 2017-04-26
合肥矽景电子有限责任公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, due to the forbidden band width of the silicon material itself of 1.12eV, the cut-off detection wavelength is 1100nm, which is not suitable for infrared photon detection.

Method used

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  • Quantum-dot wide-spectrum single-photon detector and detection method thereof
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  • Quantum-dot wide-spectrum single-photon detector and detection method thereof

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Embodiment Construction

[0024] Specific embodiments of the present invention are described in detail below, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0025] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations thereof such as "includes" or "includes" and the like will be understood to include the stated elements or constituents, and not Other elements or other components are not excluded.

[0026] Such as figure 1 As shown, a quantum dot wide-spectrum single-photon detector includes: a light-absorbing layer, an avalanche multiplication structure layer; the light-absorbing layer includes a quantum dot layer 1, a porous silicon layer 2, and the quantum dot layer 1 is provided with Porous silicon layer 2; the quantum dot layer 1 is used to absorb photons; the porous silicon layer 2 is used as a host material for quantum dots to absorb photons; the avalanche multipl...

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Abstract

The invention discloses a quantum-dot wide-spectrum single-photon detector and a detection method thereof. A singe photon from visible light to an infrared band is input to an active region of a device, a quantum dot layer absorbs the photon and then generates an exciton, the exciton is separated under the effect of a heterojunction abrupt change electric field of the quantum dot layer and a porous silicon layer, an electron hole pair is formed, and carriers move towards an electrode under the effect of the electric field. Under a reversed bias voltage in a Geiger mode, a PN node composed of a heavily-doped N+ type layer and a heavily-doped P+ type layer forms a long depletion region, carriers collide with each other in an accelerated way under the effect of a high electric field, the gain is amplified, and a detectable current is formed. The detector and the detection method thereof have the advantages that the detection efficiency is high, the temperature is kept at room temperature, the spectrum is wide, the detector and method are compatible with a CMOS technology of an integrated circuit, quenching control and a playback circuit are integrated in a single chip, and the application prospect in the market of few-photon and single-photon detectors is wide.

Description

[0001] Technical field: [0002] The invention belongs to the technical field of weak light signal detection in optical detection, and in particular relates to a quantum dot wide-spectrum single-photon detector and a detection method thereof. [0003] Background technique: [0004] Single photon is the weakest optical signal that can be transmitted. It has a wide range of applications in the fields of astronomy, quantum communication, laser signal and biomedical detection. It can observe the behavior of single molecule or single atom, and can also be used in quantum key distribution technology. . In quantum communication, based on the quantum key distribution communication technology, the quantum state of single photon is used for encoding, and according to the Heisenberg uncertainty principle, the absolutely confidential transmission of information can be realized, which has a strong advantage in information communication. Traditional single-photon detectors usually use photo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0352
CPCH01L31/035218H01L31/107
Inventor 陈龙侯颖乔丹
Owner 合肥矽景电子有限责任公司
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