171 results about "Shortwave radiation" patented technology

A light emitting apparatus having a light source for emitting short wavelength radiation and an optic device configured to receive the radiation emitted from the light source. A device directs at least some of the short wavelength radiation emitted from the light source into the optic device and a down conversion material receives at least some of the short wavelength radiation directed into the optic device in one spectral region and emits the radiation in another spectral region.

The invention is directed to a method and an arrangement for the efficient generation of intensive short-wavelength radiation based on a plasma. The object of the invention is to find a novel possibility for the generation of intensive short-wavelength electromagnetic radiation, particularly EUV radiation, which permits the excitation of a radiation-emitting plasma with economical gas lasers (preferably CO2 lasers). This object is met, according to the invention, in that a first prepulse for reducing the target density is followed by at least a second prepulse which generates free electrons in the target by multiphoton ionization after a virtually complete recombination of free electrons generated by the first prepulse has taken place due to a long-lasting expansion of the target for reducing the target density, and the main pulse of a gas laser with a low critical electron density typical for its wavelength is directed to the target immediately after the second prepulse when the second prepulse in the expanded target, whose ion density corresponds to the critical electron density of the gas laser, has created enough free electrons so that an efficient avalanche ionization is triggered by the main pulse of the gas laser until reaching the ionization level for the desired radiation emission of the plasma.

A broad bandwidth light source including: a solid state light emitting device that generates short wavelength light; and quantum dot material and phosphor material that are each irradiated by some of the short wavelength light. The short wavelength light has a spectrum with a first peak wavelength shorter than about 500 nm. The quantum dot material absorbs some of the short wavelength light and reemits it as long wavelength light having a spectrum with a second peak wavelength longer than about 600 nm. The phosphor material absorbs some of the short wavelength light and reemits it as mid wavelength light having a spectrum with a peak wavelength between the first and second peak wavelength. The light source is configured such that some of each light (short, mid, and long wavelength) is emitted coincidently as a light having a chromaticity value near the blackbody locus and a color rendering index greater than 80.

A broad bandwidth light source including: a solid state light emitting device that generates short wavelength light; and quantum dot material and phosphor material that are each irradiated by some of the short wavelength light. The short wavelength light has a spectrum with a first peak wavelength shorter than about 500 nm. The quantum dot material absorbs some of the short wavelength light and reemits it as long wavelength light having a spectrum with a second peak wavelength longer than about 600 nm. The phosphor material absorbs some of the short wavelength light and reemits it as mid wavelength light having a spectrum with a peak wavelength between the first and second peak wavelength. The light source is configured such that some of each light (short, mid, and long wavelength) is emitted coincidentally as a light having a chromaticity value near the blackbody locus and a color rendering index greater than 80.

Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.

In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.

A system and method for using near-infrared or short-wave infrared (SWIR) light sources for identification of counterfeit drugs may perform spectroscopy using a super-continuum laser to provide detection in a non-contact and non-destructive manner at stand-off or remote distances with minimal sample preparation. Also, near-infrared or SWIR light may penetrate through plastic containers and packaging, permitting on-line inspection and rapid scanning. The near-infrared or SWIR spectroscopy may also be used to detect illicit drugs and their chemical composition. Moreover, the spectroscopic techniques may also be applied to quality assessment and control in pharmaceutical manufacturing, thus permitting the implementation of smart manufacturing with feedback control. Fiber super-continuum lasers may emit light in the near-infrared or SWIR between approximately 1.4-1.8 microns, 2-2.5 microns, 1.4-2.4 microns, 1-1.8 microns. In particular embodiments, the detection system may be a dispersive spectrometer, a Fourier transform infrared spectrometer, or a hyper-spectral imaging detector or camera.

The invention is directed to a collector mirror for short-wavelength radiation based on a plasma. It is the object of the invention to find a novel possibility for managing the temperature of a collector mirror for focusing short-wavelength radiation generated from a plasma which allows an efficient thermal connection to be produced between the optically active mirror surface and a thermostat system without the disadvantages relating to space requirements or high-precision manufacture of the collector mirror. This object is met, according to the invention, in that the collector mirror has a solid, rotationally symmetric substrate which comprises a material with high thermal conductivity of more than 50 W / mK and in which channels for cooling and temperature management are incorporated in the substrate so that a heat transport medium can flow through directly and for rapidly stabilizing the temperature of the optically active mirror surface. Heat of transient temperature spikes which occur in pulsed operation for plasma generation at the mirror surface and which temporarily exceed the temperature average by a multiple is quickly dissipated.

The spectacle lens is composed of basal piece and films coated by vaporization. The basal piece is made from organic high polymer containing absorbent for visible light in shortwave. Films coated by vaporization are prepared at least one film in low refractive index and at least one film in high refractive index alternate superimposed. The method includes cleaning, impregnating, coating by vaporization and solidifying steps etc. the invented spectacle lens filters out ultraviolet radiation, most of visual purple and part of blue light (wavelengths in 380-450nm). Thus, people can see objects sharply in weak light or stronger light environment.

A lithography apparatus having achromatic Fresnel objective (AFO) that combines a Fresnel zone plate and a refractive Fresnel lens. The zone plate provides high resolution for imaging and focusing, while the refractive lens takes advantage of the refraction index change properties of appropriate elements near absorption edges to recombine the electromagnetic radiation of different energies dispersed by the zone plate. This compound lens effectively solves the high chromatic aberration problem of zone plates. The lithography apparatus allows the use of short wavelength radiation in the 1-15 nm spectral range to print high resolution features as small as 20 nm.

Certain example embodiments of this invention relate to edge sealing techniques for vacuum insulating glass (VIG) units. More particularly, certain example embodiments relate to techniques for providing localized heating to edge seals of units, and / or unitized ovens for accomplishing the same. In certain example embodiments, infrared (IR) heating elements are controllable to emit IR radiation at a peak wavelength in the near infrared (NIR) and / or short wave infrared (SWIR) band(s), and the peak wavelength may be varied by adjusting the voltage applied to the IR heating elements. The peak wavelength may be selected so as to preferentially heat the frit material used to form a VIG edge seal while reducing the amount of heat provided to substrates of the VIG unit. In certain example embodiments, the substrates of the VIG unit do not reach a temperature of 325 degrees C. for more than 1 minute.

A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er3+ Sm3+, Eu3+, Tb3+, Dy3+, Tm3+, Ho3+, and Pr3+. A laser diode pump source has a wavelength in the range of about 365 nm to 480 nm to excite a laser emission in the range of 370 to 800 nm. The laser diode pump source may comprise a GaN-based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370-380 nm, 400-415 nm, 435-445 nm, or 468-478 nm.

An imaging sensor for imaging scenes based on both shortwave infrared and midwave infrared radiation is disclosed. The imaging sensor comprises pixels that include a photodiode that is selectively sensitive to shortwave infrared radiation based upon its bias voltage.

A package structure of a light emitting diode for a backlight comprises a long-wavelength LED die and a short-wavelength LED die. The lights emitted from the two LED dies are mixed with the light emitted from excited fluorescent powders for serving as the backlight of a liquid crystal display. A partition plate is disposed between the two LED dies for separating them from each other. The effective light output of the package structure is increased because each of the two LED dies cannot absorb the light from the other.

A system and method for using near-infrared or short-wave infrared (SWIR) light sources for early detection and monitoring of breast cancer, as well as other kinds of cancers may detect decreases in lipid content and increases in collagen content, possibly with a shift in the collagen peak wavelengths and changes in spectral features associated with hemoglobin and water content as well. Wavelength ranges between 1000-1400 nm and 1600-1800 nm may permit relatively high penetration depths because they fall within local minima of water absorption, scattering loss decreases with increasing wavelength, and they have characteristic signatures corresponding to overtone and combination bands from chemical bonds of interest, such as hydrocarbons. Broadband light sources and detectors permit spectroscopy in transmission, reflection, and / or diffuse optical tomography. High signal-to-noise ratio may be achieved using a fiber-based super-continuum light source. Risk of pain or skin damage may be mitigated using surface cooling and focused infrared light.

The invention is directed to an arrangement for generating intensive radiation based on a plasma, particularly short-wavelength radiation from soft x-ray radiation to extreme ultraviolet (EUV) radiation. The object of the invention is to find a novel possibility for generating radiation generated from plasma in which the individual pulse energy coupled into the plasma and, therefore, the usable radiation output are appreciably increased while retaining the advantages of mass-limited targets. According to the invention, this object is met in that the target generator has a multiple-channel nozzle with a plurality of separate orifices, wherein the orifices generate a plurality of target jets, the excitation radiation for generating plasma being directed simultaneously portion by portion to the target jets.

A SWIR hyperspectral imaging filter has serial stages along an optical signal path with angularly distributed birefringent retarders and polarizers. The retarders can include active retarders such as tunable liquid crystal birefringent elements, passive retarders such as fixed retarders, and / or combinations thereof. Distinctly different periodic transmission spectra are provided by different filter stages, each having multiple retarders, in particular with some stages having broad bandpass peaks at wide spectral spacing and other stages have very narrow closely spaced peaks. The respective spectra include at least one tunably selectable band at which the transmission spectra of the filter stages coincide, whereby the salutary narrow bandpass and wide spectral spacing ranges of different stages apply together, resulting in a high finesse wavelength filter suitable for spectral imaging. The filter may be configured to provide faster switching speed and increased angle of acceptance and may operate in the rage of approximately 850-1700 nm.

The invention discloses an ionospheric-reflection-based time difference of arrival positioning method for a shortwave radiation source, and belongs to the technical field of shortwave communication. The method comprises the following steps of selecting corresponding receiving sites to acquire found and monitored target signals; locally compressing the target signals, and transmitting the target signals to a master server; estimating propagation channels of the signals received by each receiving site, performing joint positioning error estimation in combination with each time difference of arrival, optimizing a positioning result according to the geographic position distribution of each receiving site and the variation amplitude of ionospheric parameters and the time differences of arrival, and giving a positioning error. According to the method, a conventional shortwave receiving antenna can be utilized, a large direction-finding antenna array is not required, the reflection influence of an ionospheric layer on shortwave sky wave signals is taken into full account, and the time differences of arrival of the signals at different receiving sites through different paths are used for positioning the shortwave radiation source; the method is disclosed according to actual needs, is particularly applied to regions where large antenna arrays cannot be erected, and is practically significant, and manpower and funds can be greatly saved.

A short wavelength visible light-emitting toothbrush with an electronic interlock control device preventing operation when the toothbrush is removed from the user's mouth. The electronic interlock control over operation is necessary to prevent accidental eye exposure to the high intensity light source with a wavelength in the range of 400 nm to 500 nm. The light-emitting toothbrush activates upon entering the user's mouth but deactivates immediately when removed, thus protecting the user's eyes from direct exposure to the high power light source contained in the brush head.

A radiation source generates short-wavelength radiation, such as extreme ultraviolet radiation, for use in lithography. Rotating electrodes are provided which dip into respective baths of liquid metal, for example, tin. An electrical discharge is produced between the electrodes to generate the radiation. Holes are provided in the electrodes and / or in a metal shielding plate around the electrodes to enable better pumping down to low pressure in the vicinity of the discharge to improve the conversion efficiency of the source. The holes in the electrodes improve cooling of the electrodes by causing stirring of the liquid metal, and by improving the thermal and electrical contact between the electrodes and the liquid metal. Improved electrical contact also reduces the time-constant of the discharge circuit, thereby further improving the conversion efficiency of the source.

A SWIR hyperspectral imaging filter has serial stages along an optical signal path with angularly distributed birefringent retarders and polarizers. The retarders can include active retarders such as tunable liquid crystal birefringent elements, passive retarders such as fixed retarders, and / or combinations thereof. Distinctly different periodic transmission spectra are provided by different filter stages, each having multiple retarders, in particular with some stages having broad bandpass peaks at wide spectral spacing and other stages have very narrow closely spaced peaks. The respective spectra include at least one tunably selectable band at which the transmission spectra of the filter stages coincide, whereby the salutary narrow bandpass and wide spectral spacing ranges of different stages apply together, resulting in a high finesse wavelength filter suitable for spectral imaging. The filter may be configured to provide faster switching speed and increased angle of acceptance and may operate in the rage of approximately 850-1700 nm.

A wavelength tunable semiconductor vertical cavity surface emitting laser which includes at least one active element including an active layer generating an optical gain by injection of a current, and at least one phase control element, and mirrors. The phase control element contains a modulator exhibiting a strong narrow optical absorption peak on a short wavelength side from the wavelength of the laser generation. The wavelength control is realized by using a position-dependent electro-optical effect. If a reverse bias is applied, the absorption maximum is shifted to longer wavelengths due to the Stark effect. If a forward bias is applied, a current is injected and results in the bleaching and reduction of the peak absorption. In both cases a strong modulation of the refractive index in the phase control element occurs. The effect tunes the wavelength of the cavity mode, and the sign and the value of the wavelength shift are defined by the position of the modulator. Two phase control cascades can be implemented into the laser, one of which shifts the wavelength of the emitted light to larger values, and the other shifts the wavelength of the emitted light to smaller values. A power equalizing element can be used in such laser allowing either to maintain the constant output power at different emission wavelengths or to realize an independent frequency and amplitude modulation. A photodetecting element can be implemented in the laser allowing calibration of the laser for all operations.

The invention provides fluorescent light, light-accumulation fluorescent light, lighting device and light-accumulation lighting device whose luminescence property is perfect. Firstly, the shortwave ultraviolet radiation (254nm) generated by the fluorescent light inspires long wave ultraviolet radiation or purple luminescence material, then the light omitted by the long wave ultraviolet radiation or purple luminescence material inspires other luminescence material to obtain fluorescent light, light-accumulation fluorescent light, lighting device and light-accumulation lighting device whose luminescence efficiency is high, coloration is good, color range is wide.

In a radiation source for the generation of short-wavelength radiation, it is the object of the invention to effectively increase the protection of the collimator optics by a buffer gas without substantially reducing the radiation transmission. A vacuum chamber which encloses a radiation-emitting plasma and is outfitted with at least one feed line and one outlet line for a buffer gas in order to ensure protection against debris for at least one optical element which directs the radiation to a radiation outlet opening in the vacuum chamber has chamber areas with particle deceleration of varying magnitude by the buffer gas. The particle deceleration is greater at least in a first chamber area in which the optical element is arranged than in any other chamber area.

A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er3+ Sm3+, Eu3+, Tb3+, Dy3+, Tm3+, Ho3+, and Pr3+. A laser diode pump source has a wavelength in the range of about 365 nm to 480 nm to excite a laser emission in the range of 370 to 800 nm. The laser diode pump source may comprise a GaN-based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370–380 nm, 400–415 nm, 435–445 nm, or 468–478 nm.

A short wavelength visible light-emitting toothbrush with an electronic interlock control device preventing operation when the toothbrush is removed from the user's mouth. The electronic interlock control over operation is necessary to prevent accidental eye exposure to the high intensity light source with a wavelength in the range of 400 nm to 500 nm. The light-emitting toothbrush activates upon formation of an electrical circuit between the brush handle in contact with the users hand and the brush head or brush bristles in contact with moisture contained in a human mouth such as saliva or water mixed with toothpaste but deactivates immediately when removed from the mouth, thus protecting the user's eyes from direct exposure to the high power light source contained in the brush-head.