Method for preparing PbSe quantum dot doped fiber material

A technology of doping optical fibers and quantum dots, applied in the field of optical communication technology and nanomaterial preparation, can solve the problems of high cost, poor chemical stability and poor mechanical properties, and achieve the effects of low price, excellent performance and simple process

Inactive Publication Date: 2011-08-17
ZHEJIANG UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above work is to prepare PbSe quantum dot doped glass with a certain concentration by using some relatively difficult volatile Se compounds (such as ZnSe, PbSe, etc.) instead of volatile Se powder, but the cost is higher; or Phosphate glass with a lower melting temperature is used as the substrate, but its chemical stability and mechanical properties are poor
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  • Method for preparing PbSe quantum dot doped fiber material
  • Method for preparing PbSe quantum dot doped fiber material
  • Method for preparing PbSe quantum dot doped fiber material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 58% SiO according to glass formulation 2 , 4% B 2 o 3 , 4% Al 2 o 3 , 9% ZnO, 2% AlF 3 , 16%Na 2 O, 3% PbO, 3% Se and 1% C (wt.%), weighed analytically pure SiO 2 : 29.0g, B 2 o 3 : 2.0g, Al 2 o 3 : 2.0g, ZnO: 4.5g, Na 2 CO 3: 13.7g, PbO: 1.5g; chemically pure AlF 3 ·3H 2 O: 1.6g, Se: 1.5g and C: 0.5g. Put the above chemical raw materials in a ball mill and stir evenly, take them out and place them in a closed corundum crucible, then put them into a box-type electric furnace, melt at a high temperature of 1400°C for 1 hour, then pour the melt on a metal mold, and cool it rapidly to room temperature. A light brown glass was obtained.

[0033] Then put the glass into a box-type electric furnace, heat-treat at 550°C for 5 hours, take it out and cool it in air to room temperature, and obtain a quantum dot-doped optical fiber material with a PbSe quantum dot size of about 6nm. The transmission electron microscope figure (scale is 20nm) of the prepared PbSe qu...

Embodiment 2

[0035] 58% SiO according to glass formulation 2 , 4% B 2 o 3 , 4%Al 2 o 3 , 9% ZnO, 2% AlF 3 , 16%Na 2 O, 3% PbO, 3% Se and 1% C (wt.%), weighed analytically pure SiO 2 : 29.0g, B 2 o 3 : 2.0g, Al 2 o 3 : 2.0g, ZnO: 4.5g, Na 2 CO 3 : 13.7g, PbO: 1.5g; chemically pure AlF 3 ·3H 2 O: 1.6g, Se: 1.5g and C: 0.5g. Put the above chemical raw materials in a ball mill and stir evenly, take them out and place them in a closed corundum crucible, then put them into a box-type electric furnace, melt at a high temperature of 1400°C for 1 hour, then pour the melt on a metal mold, and cool it rapidly to room temperature. A light brown glass was obtained.

[0036] Then put the glass into a box-type electric furnace, heat-treat at 600°C for 5 hours, take it out and cool it to room temperature in the air, and you can get a quantum dot-doped optical fiber material with a PbSe quantum dot size of about 9nm. The transmission electron microscope figure (scale is 20nm) of the prepare...

Embodiment 3

[0038] 58% SiO according to glass formulation 2 , 4% B 2 o 3 , 4% Al 2 o 3 , 9% ZnO, 2% AlF 3 , 16%Na 2 O, 3% PbO, 3% Se and 1% C (wt.%), weighed analytically pure SiO 2 : 29.0g, B 2 o 3 : 2.0g, Al 2 o 3 : 2.0g, ZnO: 4.5g, Na 2 CO 3 : 13.7g, PbO: 1.5g; chemically pure AlF 3 ·3H 2 O: 1.6g, Se: 1.5g and C: 0.5g. Put the above chemical raw materials in a ball mill and stir evenly, take them out and place them in a closed corundum crucible, then put them into a box-type electric furnace, melt at a high temperature of 1400°C for 1 hour, then pour the melt on a metal mold, and cool it rapidly to room temperature. A light brown glass was obtained.

[0039] Then put the glass into a box-type electric furnace, heat-treat at 650°C for 5 hours, take it out and cool it to room temperature in the air, and obtain a quantum dot-doped optical fiber material with a PbSe quantum dot size of about 13nm.

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Abstract

The invention discloses a method for preparing a PbSe quantum dot doped fiber material. The fiber material is prepared from the following raw materials in percentage by mass: 45 to 75 percent of SiO2, 3 to 10 percent of B2O3, 3 to 10 percent of Al2O3, 5 to 20 percent of ZnO, 1 to 7 percent of AlF3, 10 to 25 percent of Na2O, 0.5 to 5 percent of PbO, 0.5 to 5 percent of Se, and 0.5 to 2 percent of C. The PbSe quantum dot doped fiber material is prepared by the following steps of: weighing the raw materials in mass percentage, putting the raw materials into a ball mill, fully mixing the raw materials uniformly, putting the mixture into a closed crucible, melting the mixture for 30 minutes to 2 hours at the high temperature of between 1,100 and 1,450 DEG C, then quickly cooling the melt to obtain light brown grass, and finally performing a thermal treatment process to obtain the brown black PbSe quantum dot doped fiber material. The PbSe quantum dot doped fiber material prepared by the method has the characteristics of simple process, low price, controllable quantum dot size and the like.

Description

(1) Technical field [0001] The invention relates to the fields of optical communication technology and nano material preparation, in particular to a preparation method of PbSe quantum dot doped optical fiber material. The PbSe quantum dot doped optical fiber material prepared by the invention can be applied to optical fiber amplifiers. (2) Background technology [0002] Quantum dots are quasi-zero-dimensional semiconductor nanocrystals whose radius is smaller than or close to the exciton Bohr radius. Due to the quantum strong confinement effect caused by their extremely small size, quantum dots exhibit many unique electrical, optical and magnetic properties, which have attracted great attention. Among them, IV-VI semiconductor quantum dots, such as PbSe and PbS, have a large exciton Bohr radius (PbSe is 46nm, PbS is 18nm), which leads to a strong quantum confinement effect and shows a strong fluorescence emission spectrum. . Quantum dots with different fluorescence emissi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/118
Inventor 程成江慧绿
Owner ZHEJIANG UNIV OF TECH
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