MgZnO solar-blind photoresistor and preparation method thereof

Abstract

The invention discloses a MgZnO solar-blind photoresistor and a preparation method thereof, belongs to the field of photoelectron information, and is mainly used in solar-blind photoresistors with low bias voltage and high response. The problem of separation during MgZnO preparation with a high component Mg is solved. According to the method for preparing the solar-blind photoresistor by a MgZnO thin film, a first MgxZn1-xO transition layer, a second MgyZn1-yO transition layer, a MgZZn1-ZO thin film with the high component Mg and an electrode grow on an R-surface sapphire substrate; and the method comprises the following steps of: 1, conveying the cleaned R-surface sapphire substrate into a molecular beam epitaxy (MBE) pregrowing chamber; 2, treating the R-surface sapphire substrate at the temperature of between 750 and 850 DEG C for 15 to 30 minutes in the pregrowing chamber; 3, conveying the R-surface sapphire substrate into a growing chamber; growing the first MgxZn1-xO transition layer which is 2 to 10nm thick at the growing temperature of between 400 and 500 DEG C, wherein x is in a range of 0.16 to 0.20; and then growing the second MgyZn1-yO transition layer which is 2 to 10nm thick at the same growing temperature, wherein y is in a range of 0.26 to 0.40; 4, growing the MgZZn1-ZO thin film at the growing temperature of between 400 and 500 DEG C, wherein z is in a range of 0.43 to 0.55; and 5, preparing the metal electrode which is 100 to 150 nm thick on the MgZZn1-ZO thin film, wherein metal materials are Al, Au and Pt. The preparation process is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the field of optoelectronic information, and relates to a MgZnO solar-blind photosensitive resistor, which is mainly used for generating a solar-blind photosensitive resistor with low bias voltage and high response. Background technique [0002] Solar-blind photoresistors are key components in many application fields, widely used in fire detection, flame sensing, astronomical observation and research, aviation and aerospace tracking and control, meteorological environment monitoring and forecasting, medical and health and biological engineering, communications and other fields . Traditionally, photomultiplier tubes (PMTs) and filters and fluorescence frequency reduction technology are used for solar blind detection. However, this equipment has disadvantages such as high cost, high voltage required for operation, large volume, and heavy weight. The semiconductor photoresistor has the advantages of low operating voltage, small s...

AI Technical Summary

Problems solved by technology

The research results show that the preparation of MgZnO with large Mg content will cause phase separation, and its preparation is very difficult

There are two reasons: one is the polarity of ZnO grown on the usual C-plane sapphire substrate, but the lattice mismatch between MgO, ZnO and C-plane sapphire is large

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