An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant
composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by
ion bombardment; in a second chamber,
argon and
oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using
pulsed DC magnetron
sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber,
argon and
oxygen are introduced, and AlO is sputtered using
pulsed DC magnetron
sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection,
etching-resistant
composite coating. This invention constructs a non-stoichiometric Al2O3
composite coating within the composite
coating. x A gradient structure of
oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with
low oxygen content AlO2O3. x The layer has a
high oxygen vacancy concentration and low
reflectivity, which can effectively reduce the reflection intensity in the
ultraviolet-
visible band. The dense Al2O3 layer formed on the surface has good
structural stability and chemical inertness, thus significantly improving the
etching resistance of the
coating in the
plasma etching environment.