Wide-spectrum extremely-low transmission structure and preparation process thereof

A preparation process and wide-spectrum technology, which is applied in the field of wide-spectrum ultra-low transmission structure and its preparation process, can solve the problems of high stability, low light transmittance, and wide-spectrum ultra-low, achieving remarkable performance, high preparation repeatability, Effects in simple steps

Inactive Publication Date: 2020-04-14
JIANGSU HINOVAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: the existing wide-spectrum light-absorbing structure cannot take into account the problems of high stability and wide-spectrum low light transmittance at the same time; the present invention provides a wide-spectrum extremely low transmittance structure to solve the above problems and its preparation process

Method used

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  • Wide-spectrum extremely-low transmission structure and preparation process thereof
  • Wide-spectrum extremely-low transmission structure and preparation process thereof
  • Wide-spectrum extremely-low transmission structure and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A wide-spectrum extremely low-transmission structure, including a polymer material substrate, specifically a polyimide material substrate, and a nano-forest structure directly formed on the opposite surfaces of the substrate, and the material loaded on the nano-forest structure is Au metal nanoparticles.

[0040] The preparation process of the above-mentioned wide-spectrum extremely low transmission structure, such as figure 1 As shown, the details are as follows:

[0041] First, prepare the substrate, the structure of which is as follows figure 1 Shown in a; Subsequently, the upper surface of the substrate is bombarded with oxygen plasma, wherein the oxygen flow rate is 30 sccm, the pressure is 2.36 Pa, the power is 75 W, and the bombardment time is 90 min. Subsequently, argon plasma bombardment was carried out, wherein the flow rate of argon gas was 20 sccm, the pressure was 2.4 Pa, the power was 75 W, and the bombardment time was 60 min. After the above treatment,...

Embodiment 2

[0045] A wide-spectrum extremely low transmission structure, including a silicon substrate, a nano-forest structure directly formed on one of the surfaces of the substrate, metal nanoparticles loaded on the nano-forest structure and made of Ag, and arranged on the substrate with nano A metal layer on the opposite surface of the forest structure.

[0046] The preparation process of the above wide-spectrum ultra-low transmission structure is as follows: image 3 As shown, after forming a metal layer on one surface of the substrate, the nano-forest structure loaded with metal nanoparticles is formed on the other surface of the substrate; or after the nano-forest structure loaded with metal nanoparticles is formed on the other surface of the substrate , and then form a metal layer on the surface of the substrate. in,

[0047] The process of forming a metal layer on the surface of the substrate is as follows:

[0048] The metal layer is directly formed on the surface of the subs...

Embodiment 3

[0055] A wide-spectrum extremely low transmission structure, including a polymer substrate, the polymer is PMMA or PTFE or PI or PS or PC, directly forming a nano-forest structure on one of the surfaces of the substrate, and loading materials on the nano-forest structure Au metal nanoparticles, and a metal layer disposed on the other surface of the substrate opposite to the nano-forest structure.

[0056] The preparation process of the above wide-spectrum ultra-low transmission structure is as follows: Figure 5 As shown, a metal layer is first formed on one surface of the substrate, and then a nano-forest structure loaded with metal nanoparticles is formed on the other surface of the substrate; or a nano-forest structure loaded with metal nanoparticles is formed on the other surface of the substrate After that, a metal layer is formed on the surface of the substrate.

[0057] The specific process of this embodiment is as follows:

[0058] First sputter a metal layer on the ...

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Abstract

The invention discloses a wide-spectrum extremely-low transmission structure and a preparation method thereof. The wide-spectrum extremely-low transmission structure comprises a substrate, and furthercomprises a nano forest structure directly formed on at least one surface of the substrate, and metal nano particles loaded on the nano forest structure; when only one surface of the substrate is ofa nano forest structure, a metal layer is arranged on the other surface, opposite to the nano forest structure, of the substrate. The structure provided by the invention has the advantages of high stability and high light absorption capability.

Description

technical field [0001] The invention relates to the field of optics, in particular to a wide-spectrum ultra-low transmission structure and a preparation process thereof. Background technique [0002] The wide-spectrum ultra-low transmission structure has a wide range of applications. The usual method is to use a certain method to set graphene, carbon nanotubes, carbon black and other broad-spectrum high-absorption materials on the substrate material to achieve broad-spectrum high absorption of the entire device. . However, there is poor adhesion between these materials and the substrate, and the material is easy to fall off, especially under the action of force, the material is very easy to peel off from the substrate material. Even after wrapping the entire layer of material with a specific film protective layer, the entire layer of material may be damaged due to damage to the film protective layer. In addition, the use of thin-film protective layers can also affect the o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00031B81C1/00404B81C1/00531B81C2201/0132B81C2201/0159
Inventor 毛海央杨帅赵倩杨宇东陈大鹏
Owner JIANGSU HINOVAIC TECH CO LTD
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