Field effect transistor photoelectric detector based on dielectric layer response

Abstract

The invention belongs to the field of photoelectric detectors, and particularly discloses a field effect transistor photoelectric detector based on dielectric layer response, which comprises a grid electrode, a photoelectric response composite dielectric layer, a carrier transport layer, a source electrode and a drain electrode. The composite dielectric layer is formed by compounding a photoelectric response medium and a charge blocking insulating medium; the carrier transmission layer is used for transmitting electrons or holes, the photoelectric response medium is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating medium is used for limiting passing of the electrons, the holes and the excitons; the generation of photo-induced electrons, holes or excitons in the composite dielectric layer and the movement of the photo-induced electrons, holes or excitons limited in the photoelectric response medium cause the change of the effective dielectric constant of the composite dielectric layer and cause the change of the carrier concentration and conductivity of the carrier transport layer, and photoelectric detection is realized according to the change of the current between the source electrode and the drain electrode before and after illumination. According to the invention, the design flexibility of the photoelectric detector is obviously improved, and the photoelectric detector with high performance and low cost can be further realized.

Description

technical field [0001] The invention belongs to the field of photodetectors, and more specifically relates to a field effect tube photodetector based on the response of a dielectric layer. Background technique [0002] Optical signals contain a lot of effective information, and the effective detection of photons is helpful to obtain these information, so as to realize the collection and transmission of information. The effective detection of photons is of great significance to the development of informatization and intelligent technology. The detection technology of photons is mainly based on photodetectors, which convert optical signals into electrical signals through device design, so as to realize further processing of information. [0003] Currently, direct photodetectors are mainly based on photoconductive or photovoltaic principles. The principle of photoconductivity mainly utilizes the characteristics of the conductance change of semiconductor materials under light, ...

AI Technical Summary

Problems solved by technology

For photoconductive photodetectors, the photoresponsive semiconductor material is also responsible for absorbing light to generate photogenerated carriers and conducting carriers; one of the difficulties involved here is that semiconductor materials with good light absorbing ability do not necessarily have good Carrier transport capability; Another difficulty is that in order to obtain high detection accuracy, the dark current caused by the defect state in the active layer semiconductor should be as small as possible, which puts forward higher requirements for semiconductor materials; Therefore, the selection and preparation of semiconductors are largely limited.

For photovoltaic photodetectors, just like the problems faced by solar cells, the recombination inside the device greatly limits the sensitivity and other performance of the device.

Although many photodetectors with excellent performance have been obtained through changes in the working environment of the device and effective control of high-quality materials in the device, these technologies have significantly increased the cost of photodetectors.

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