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Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof

A two-color detector, zinc oxide technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as lack of lattice matching of AlGaN, difficulty in improving crystal quality, limiting device efficiency, etc., to avoid photoelectric The effect of conduction, small dark current, and fast response

Inactive Publication Date: 2013-08-21
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some key problems have yet to be broken through. For example, due to the lack of a lattice-matched and thermally-matched growth substrate in AlGaN, the defect density is high and the crystal quality is difficult to improve, which limits the device efficiency.

Method used

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  • Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof
  • Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof
  • Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof

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specific Embodiment approach 1

[0040] Embodiment 1: In the material structure used in the ultraviolet and infrared dual-color detector of this embodiment, the ultraviolet detection region adopts a Schottky barrier or p-i-n structure, which is placed on the top of the device, and the infrared detection adopts multi-period i-ZnMgO / n + -ZnO or i-Zn y Mg 1-y O / n + -Zn x Mg 1-x O (x>y) is used as the infrared sensitive area, making full use of the HEIWIP effect to improve the infrared response. The infrared sensitive area is below the ultraviolet detection area of ​​the device, and the second n-ohmic electrode contact layer (n-type concentration to )connect.

[0041] The ultraviolet-infrared dual-color detector provided in this embodiment adopts a three-electrode structure, including from bottom to top:

[0042] A substrate, on which a material structure for an ultraviolet-infrared dual-color detector is grown;

[0043] a buffer layer grown on top of the substrate;

[0044] a first n-type ohmic con...

specific Embodiment approach 2

[0056] Specific implementation mode two: In this implementation mode, the Schottky barrier-HEIWIP structure is used as an example for the infrared-ultraviolet dual-color detector (the material structure is as follows: figure 1 and a device structure such as image 3 ), specifically explain the implementation steps of the ultraviolet-infrared dual-color detector. Such as figure 1 Its structure is to sequentially grow a buffer layer 11: ZnO on a sapphire substrate 10 with MOCVD or MBE equipment, with a thickness of 0.02-0.2 μm. The first n-type ohmic contact layer 12: ZnO is grown on the buffer layer 11 with a thickness of 0.5-1 μm and a doping concentration of n ~ scope. On the first n-type ohmic contact layer 12, the first intrinsic layer 13 / heavily doped layer 14 is grown sequentially: i-ZnMgO / n + -ZnO or i-Zn y Mg 1-y O / n + -Znx Mg 1-x O (x>y); the alternately grown first intrinsic layer 13 / heavily doped layer 14 forms a multi-period layer 15, wherein the electron...

specific Embodiment approach 3

[0063] Embodiment 3: The difference between this embodiment and Embodiment 2 is that when the ultraviolet detection adopts the p-i-n structure, then a p-type layer 18 is grown on the second intrinsic layer 17: p-ZnO or p-ZnMgO, empty The hole concentration is to Range, thickness 0.02~0.2 μm, p-i-n—HEIWIP structure such as figure 2 As shown, the device structure is as Figure 4 shown.

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Abstract

The invention discloses an ultraviolet and infrared double-color detector based on zinc oxide materials and a manufacturing method thereof and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a substrate (10), a buffer layer (11), a first n-type ohmic electrode contact layer (12), an infrared sensitive layer, a second n-type ohmic electrode contact layer (16), an ultraviolet sensitive layer (17) and a transparent electrode layer (19) which is arranged above the ultraviolet sensitive layer, wherein the buffer layer (11), the first n-type ohmic electrode contact layer (12), the infrared sensitive layer, the second n-type ohmic electrode contact layer (16), the ultraviolet sensitive layer (17) and the transparent electrode layer (19) are sequentially arranged on the substrate (10) in a growth mode. A bottom electrode (22), a middle electrode (21) and a top electrode (20) are arranged on the first n-type ohmic electrode contact layer (12), the second n-type ohmic electrode contact layer (16) and the transparent electrode layer (19) respectively. A three-electrode structure is adopted by the detector, namely, the middle electrode in the three-electrode structure serves as a common electrode of ultraviolet and infrared detection, an upper electrode and a lower electrode respectively serve as the other electrode of the ultraviolet and infrared detection, and the detector achieves the aim of simultaneously detecting ultraviolet radiation and infrared radiation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and relates to an ultraviolet-infrared dual-color detector based on a zinc oxide material and a manufacturing method thereof. Background technique [0002] Modern informatization has increasingly high requirements for optoelectronic components, and photodetectors must accurately detect target information under complex backgrounds and strong interference. The inherent weaknesses and limitations of single infrared and ultraviolet detectors are becoming more apparent. [0003] Recently, new infrared detectors based on GaAs / AlGaAs multiple quantum wells and InAs / InGaSb superlattice materials have been developed rapidly. Currently, GaAs / AlGaAs, InAs / GaInSb, etc. are the new generation of infrared detection materials under development. The design detection wavelength of GaAs / AlGaAs QWIP can be from 5 to 25 μm, which is one of the ideal materials for infrared detection. H...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/11H01L31/18
CPCY02P70/50
Inventor 矫淑杰王东博
Owner HARBIN INST OF TECH
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