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Electro-optical modulating device preparing method based on quantum restriction Stark effect

A quantum confinement and device technology, applied in instruments, optics, nonlinear optics, etc., can solve problems such as unsatisfactory optical properties, and achieve the effect of novel electrode structure and convenient synthesis method

Active Publication Date: 2016-04-13
SOUTHEAST UNIV
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Problems solved by technology

For example, in CdSe / CdS quantum dots, due to the ubiquitous blingking phenomenon (blinking), the application in the field of photoelectric modulation is limited. Although it has been reported that large-size CdSe / CdS quantum dots can suppress the blinking phenomenon to a certain extent, but The optical properties of quantum dots are not ideal after the size becomes larger, so the problem cannot be solved fundamentally

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  • Electro-optical modulating device preparing method based on quantum restriction Stark effect

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Embodiment Construction

[0024] The specific embodiment of the preparation method based on CdSe / CdS quantum dots and its quantum confinement Stark device invented herein is as follows:

[0025] The first is the synthesis of non-bliking CdSe / CdS quantum dots, the method is as follows:

[0026] 1) Add 60mg of cadmium oxide, 280mg of octadecylphosphoric acid, and 3g of tri-n-octylphosphorus oxide into a 50mL flask, and inject argon at 150°C for 1 hour to ensure the argon atmosphere;

[0027] 2) Under an argon atmosphere, heat up to 320°C until the solution is colorless and transparent, then add 1g of tri-n-octylphosphine after cooling down to room temperature;

[0028] 3) Continue to heat up to 380°C, quickly inject 0.5mL tri-n-octylphosphine dissolved in 60mg of selenium powder to obtain CdSe nuclear quantum dots of suitable size, after cooling down, purify and dissolve in n-hexane to prepare cladding;

[0029] 4) Mix the above-purified CdSe nuclear quantum dots with 3mL octadecene and 3mL oleylamine, ...

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Abstract

The invention provides a preparing method based on CdSe / CdS quantum dots and a quantum restriction Stark device thereof. The quantum dots are prepared to be mixed and injected into a precursor through a constant flow pump. The method is novel, simple and capable of obtaining pure-wurtzite-phase non-blinking CdSe / CdS quantum dots; the device is manufactured on a quartz substrate, the periodic cross electrode structure is obtained by means of the process of gluing, exposing, developing, evaporating, cleaning and the like, electrodes are evaporated through Au, the distance between every two electrodes is 2 micrometers, and under an inverted microscope, a white light source is utilized for measuring transmission spectrum changes of the quantum dots on the structure before and after voltage is connected.

Description

technical field [0001] The invention proposes a method for preparing an electro-optic modulation device based on the quantum-confined Stark effect of CdSe / CdS quantum dots, and belongs to the technical field of photoelectric modulation devices. Background technique [0002] In the past 15 years, with the maturity of the semiconductor preparation process, semiconductor quantum dots have been widely used in the field of optoelectronics, mainly including LEDs and display devices, solar cells, etc., but their applications in the field of photoelectric modulation are quite limited, such as light switch. This is mainly due to the nature of semiconductor quantum dots. For example, in CdSe / CdS quantum dots, due to the ubiquitous blingking phenomenon (blinking), the application in the field of photoelectric modulation is limited. Although it has been reported that large-size CdSe / CdS quantum dots can suppress the blinking phenomenon to a certain extent, but The optical properties o...

Claims

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Application Information

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IPC IPC(8): G02F1/017
CPCG02F1/017G02F1/01791
Inventor 张家雨樊恺廖晨
Owner SOUTHEAST UNIV
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