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Method for preparing nonstoichiometric ratio magnesia alumina spinel single crystals

A non-stoichiometric ratio, magnesium-aluminum spinel technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of high cost, difficult growth, and less use

Inactive Publication Date: 2006-10-11
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] MgAl 2 o 4 The lattice mismatch between the crystal and GaN is 9%, but the melting point is as high as 2150°C, it is difficult to grow, and the cost is high, so it is rarely used

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] MgO, Al 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 1:1.5, and the total weight is 0.5Kg. After mechanically mixing evenly, use a press machine at 40kg / cm 2 It is pressed into a cake under a certain pressure and then sintered at 1200°C for 20 hours in a neutral nitrogen atmosphere. The furnace is evacuated and filled with high-purity nitrogen, and the temperature is raised to 1900°C to melt and prepare for growth. The pulling speed was 1 mm / h, and the rotation speed was 15 rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. The crystals are colorless, transparent, complete and of good quality.

Embodiment 2

[0032] MgO, Al 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 1:1.5, and the total weight is 1Kg. After mechanically mixing evenly, use a press machine at 20kg / cm 2 It is pressed into a cake under a certain pressure and then sintered at 1200°C for 10 hours in a neutral nitrogen atmosphere. The furnace is vacuumed and filled with high-purity argon, and the temperature is raised to 1900°C to melt and prepare for growth. The pulling speed was 1.5 mm / h, and the rotation speed was 10 rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. The crystals are colorless, transparent, complete and of good quality.

Embodiment 3

[0034] MgO, Al 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 1:2, and the total weight is 0.5Kg. After mechanically mixing evenly, use a press machine at 30kg / cm 2 It is pressed into a cake under a certain pressure and then sintered at 1400°C for 20 hours in a neutral nitrogen atmosphere. The furnace is vacuumed and filled with high-purity nitrogen, and the temperature is raised to 1900°C to melt and prepare for growth. The pulling speed was 1.5 mm / h, and the rotation speed was 15 rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. The crystals are colorless, transparent, complete and of good quality.

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Abstract

The invention relates to a method for preparing magnesium aluminate spinel monocrystal, wherein the structure of magnesium aluminate spinel monocrystal is MgO .(Al2O3)n; n=1.3, 1.5, 2.0, 2.3, 2.5, 2.7, 3.0, 3.5, 4.5, 5.0; and the preparation comprises: (1) based on selected n value, preparing relative MgO and Al2O3; (2) sintering raw materials in neutral gas; (3) in neutral gas, using middle-frequency sensitive heating monocrystal furnace to grow crystal via drawing method; selecting n value, the crystal will form different optical effect to be used; when n=3, the crystal grid dismatch between spinel and GaN is lower to be processed easily, to form high-quality GaN substrate.

Description

technical field [0001] The present invention relates to a kind of non-stoichiometric magnesium-aluminum MgO·(Al 2 o 3 ) n spinel single crystal preparation method. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention, and they will be used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater It has broad application prospects in communication, deep water exploration, laser printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. The Polish High Pressure Research Center only produced strips with a width of 5 mm at a high temperature of 1600 ° C and a...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00
Inventor 吴锋夏长泰徐军裴广庆张俊刚吴永庆
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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