Capacitor and formation method thereof

A technology of capacitors and electrodes, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as nonlinear error of analog integrated circuits, capacitance mismatch, etc.

Active Publication Date: 2011-10-19
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Capacitance mismatch is a major cause of non

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor and formation method thereof
  • Capacitor and formation method thereof
  • Capacitor and formation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0040] In the following description, specific details are set forth in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar generalizations without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0041] The metal-oxide-metal capacitors in the prior art are all directly formed on the semiconductor substrate. In order to increase the capacitance value, the structure of the capacitor becomes more and more complex, such as a multilayer stacked structure, which makes the f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

A capacitor and a formation method thereof are disclosed. The capacitor comprises: a plurality of pseudo electrodes which are formed on a semiconductor basement and are arranged as an array; dielectric layers which are formed on surfaces of the pseudo electrodes and on a surface of the semiconductor basement; first electrodes and second electrodes which are formed on the dielectric layers, wherein insulation materials are filled between the first electrodes and the second electrodes. By using the invention, a mismatch problem of the capacitor can be improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor devices and manufacturing, in particular to a metal-oxide-metal capacitor and a method of forming the same. Background technique [0002] Capacitors are commonly used devices in integrated circuits and consist of two metal electrodes insulated from each other. Common capacitors include metal-insulator-metal (MIM, metal-insulator-metal) capacitors and metal-oxide-metal (MOM, metal-oxide-metal) capacitors, among which MOM capacitors are more widely used due to their simple manufacturing process Applications. [0003] The published Chinese patent application No. 200710145334.8 discloses a stacked metal-oxide-metal capacitor structure. The structure includes a plurality of metal layers in a stacked relationship, wherein each metal layer includes parallel and separated A plurality of conductive electrode lines, the conductive electrode lines include a dielectric between them, and the conductive lines ar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/92H01L21/02
Inventor 钱蔚宏程仁豪
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap