Capacitor and formation method thereof

Abstract

A capacitor and a formation method thereof are disclosed. The capacitor comprises: a plurality of pseudo electrodes which are formed on a semiconductor basement and are arranged as an array; dielectric layers which are formed on surfaces of the pseudo electrodes and on a surface of the semiconductor basement; first electrodes and second electrodes which are formed on the dielectric layers, wherein insulation materials are filled between the first electrodes and the second electrodes. By using the invention, a mismatch problem of the capacitor can be improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor devices and manufacturing, in particular to a metal-oxide-metal capacitor and a method of forming the same. Background technique [0002] Capacitors are commonly used devices in integrated circuits and consist of two metal electrodes insulated from each other. Common capacitors include metal-insulator-metal (MIM, metal-insulator-metal) capacitors and metal-oxide-metal (MOM, metal-oxide-metal) capacitors, among which MOM capacitors are more widely used due to their simple manufacturing process Applications. [0003] The published Chinese patent application No. 200710145334.8 discloses a stacked metal-oxide-metal capacitor structure. The structure includes a plurality of metal layers in a stacked relationship, wherein each metal layer includes parallel and separated A plurality of conductive electrode lines, the conductive electrode lines include a dielectric between them, and the conductive lines ar...

AI Technical Summary

Problems solved by technology

Capacitance mismatch is a major cause of non-linear errors in analog integrated circuits

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