Micro mechanical capacitance type acceleration transducer, and fabricating method

A technology of an acceleration sensor and a manufacturing method, which is applied in the direction of measuring acceleration, velocity/acceleration/impact measurement, instruments, etc., can solve the problems of increasing the difficulty and complexity of manufacturing process, increasing the complexity of manufacturing process, difficulty in controlling the size and shape, and the like, The layout design is simple, the manufacturing cost is reduced, and the sensitivity is changed.

Active Publication Date: 2007-05-09
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

This method makes the design of the device more complicated, and the size and shape control is more difficult
At the same time, when they made devices with beams on both sides of the mass block, they used two silicon wafers to etch the pattern of the mass block on one side respectively, and then performed silicon-silicon bonding to form a middle movable electrode with beams on both sides. This is undoubtedly Added to the complexity of the manufacturing process
Moreover, when making elastic beams and mass blocks, it is often carried out in two steps, first corroding the mass block pattern, and then using dry etching technology to make elastic beams, such as W.S.Henrion, et.al, Sensors structure with L-shaped springlegs, US Patent No.5,652,384, which also increases the complexity of the process, and requires the use of expensive equipment, increasing the cost of device manufacturing
[0005] In the manufacture of elastic beams,

Method used

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  • Micro mechanical capacitance type acceleration transducer, and fabricating method
  • Micro mechanical capacitance type acceleration transducer, and fabricating method
  • Micro mechanical capacitance type acceleration transducer, and fabricating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] 1. Corrosion forms the damping gap window of the movable mass block, that is, the production of the intermediate movable mass block:

[0049] (1) The upper and lower surfaces of the oxidized double-polished (100) silicon wafer are made of damping gap window 5 by anisotropic etching method, and the etching depth is 4um;

[0050] (2) Secondary oxidation to form silicon oxide, double-sided photolithography, using chemical vapor deposition process to fabricate 4000 Ȧ Si on the upper and lower surfaces of the movable mass 3 N 4 Anti-overload bump 7;

[0051] (3) Upper and lower double-sided photolithographic patterns, wet anisotropic etching to obtain straight elastic beams 3, 4 and movable mass 2 on the front and back of the movable electrode at the same time, the etching depth is determined by the thickness of the silicon wafer and the elastic beam depends on the thickness. There are four straight elastic beams 3 on the front side of the silicon wafer, which are distrib...

Embodiment 2

[0059] Its concrete implementation steps are identical with embodiment 1, and main difference is the distribution (Fig. 6) of straight elastic beam:

[0060] There are four straight elastic beams 3 on the front side of the silicon wafer 1 distributed symmetrically on the opposite corners of the mass block;

[0061] Four straight elastic beams 4 are symmetrically distributed on the corners of the other two opposite sides of the mass block on the back of the silicon wafer 1 .

Embodiment 3

[0063] 1. Production of the middle movable mass:

[0064] (1) The upper and lower surfaces of the oxidized double-polished (100) silicon wafer are made of damping gap window 5 by anisotropic etching method, and the etching depth is 4um;

[0065] (2) Secondary oxidation to form silicon oxide, double-sided photolithography, using chemical vapor deposition process to produce 4000 Ȧ Si on the upper and lower surfaces of the mass block 3 N 4 Anti-overload bump 7.

[0066] (3) Front photolithographic pattern, wet anisotropic etching to obtain straight elastic beam 3 and movable mass block 2 at the same time;

[0067] (4) Secondary oxidation, photolithographic pattern on the back, and wet anisotropic etching to obtain the straight elastic beam 4 and the movable mass block 2 at the same time. The depth of the two etchings is the same, which is determined by the thickness of the silicon wafer and the thickness of the elastic beam. . There are four straight elastic beams 3 on the fr...

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Abstract

A method for preparing acceleration transducer of micromechanical capacity type includes forming rectangular mass block with no lobe compensation on single crystal silicon pellet by utilizing aeolotropic corrosion technique based on elastic beams being alternatively distributed at top and bottom surfaces of active mass block, forming straight elastic beam at two said surfaces of mass block, applying silicon-silicon bond technique to realize bond of three-layers silicon pellet, depositing lead wire pad of top electrode and active electrode and realizing electric signal isolation between two said electrodes.

Description

technical field [0001] The present invention relates to a micro-mechanical capacitive acceleration sensor and its manufacturing method. More precisely, the present invention uses silicon anisotropic corrosion as the key technology to manufacture the structure and manufacturing method of the micro-mechanical capacitive acceleration sensor. It belongs to the field of microelectromechanical systems. Background technique [0002] Silicon micro-accelerometers are very important micro-inertial devices that can be used in automobiles, robots, and various guidance and measurement and control systems. According to the sensitive principle, micromachined acceleration sensors can be roughly divided into: piezoresistive, piezoelectric, thick film strain gauge, electromagnetic, thermocouple, resonator and capacitive. Among them, the capacitive acceleration sensor can be divided into force balance type and non-force balance type. The movable mass forms a movable electrode of the variable...

Claims

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Application Information

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IPC IPC(8): G01P15/125
Inventor 熊斌范克彬车录峰王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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