METHODS for forming semiconductor structures

Abstract

Methods for forming semiconductor structures and methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-cleanprocess is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a semiconductor structure, in particular to a method for forming a magnetoresistive random access memory. Background technique [0002] The semiconductor industry continues to increase the density of electronic components (such as transistors, diodes, resistors, capacitors, etc.) in integrated circuits through the innovation of semiconductor technology. Such innovations include progressive reductions in minimum feature size; three-dimensional transistor structures (such as fin field-effect transistors (FinFETs)); increased number of interconnection layers; and interconnections stacked on top of semiconductor substrates. Non-semiconductor memories in the layer, such as ferroelectric random access memory (FRAM) and magnetoresistive random access memory (magneto-resistive RAM, MRAM). The basic storage element of the MRRAM is a magnetic tunnel junction (MTJ). High component density enabl...

AI Technical Summary

Problems solved by technology

Integrating so many functions on a chip usually presents many new challenges, such as forming and integrating various electronic components and transistor structures

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